Chinese semiconductor industry

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tokenanalyst

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Sicreat (Suzhou) Semiconductor Technology Co., Ltd., hereinafter referred to as "Sicreat" or the "Company," was established in 2013. Sicreat focuses on the research and development of advanced semiconductor materials and engages in the R&D and industrialization of core components for integrated circuits. It builds an ecosystem for core component development around plasma etching advanced processes, successfully developing internationally advanced technology for growing semiconductor-grade monocrystalline silicon rods under magnetic fields (MCZ), and focusing on core businesses such as monocrystalline silicon components, silicon carbide components, and coating on etching chamber surfaces. Since its establishment, Sicreat has experienced rapid development, earning honors such as Suzhou Industrial Park's leading scientific and technological talent, Jiangsu Province's entrepreneurial talent, Suzhou Gazelle Enterprise, unicorn nurturing enterprise, potential unicorn enterprise in Jiangsu Province's high-tech zone, and national high-tech enterprise. The company has also participated in two national-level major R&D projects.

In recent years, the company has completed six rounds of financing, totaling more than 600 million in funding. Shareholders include well-known domestic funds such as Yuanhe Zongyang and CITIC Capital, as well as semiconductor industry capitals like SMIC (688012), Northern Huachuang (002371 CVC), Shixi Capital, and Ruixin Investment.

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tokenanalyst

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Qiyuan Gas signed a bulk gas supply agreement with a domestic semiconductor company​


Recently, Shanghai Qiyuan Gas Development Co., Ltd. (hereinafter referred to as: Qiyuan Gas) signed a bulk gas supply agreement with a domestic semiconductor company. The contract period is 15 years. Qiyuan Gas will be responsible for the construction of the customer’s bulk gas station and the bulk gas supply during the contract period. Supply of gases and operation and maintenance of systems.
Qiyuan Gas has been the customer's only supplier of ultrapure liquid oxygen since its establishment. This cooperation is the second time that the two parties have joined hands and is of great significance to both parties. It not only marks a major step forward for this customer in the localization of electronic bulk gases, but also marks a major breakthrough for Qiyuan Gases in the integrated circuit industry.
Shanghai Qiyuan Gas Development Co., Ltd. was established in 2009. It started from the research and development and manufacturing of air separation equipment. It is a rare "design-production-operation-maintenance" integrated enterprise. The business covers electronic special gases, electronic bulk gases and semiconductor equipment. The company has self-developed high-end rare gas purification equipment and production capabilities, and has built the first domestic krypton-xenon and neon-helium separation equipment, which can supply ultra-high purity oxygen, high-purity nitrogen, ultra-pure carbon dioxide, ultra-pure krypton gas, xenon gas, and neon gas and helium, as well as excimer laser gases required for panels and semiconductors, etc.

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tokenanalyst

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Xiamen University publishes important results on green GaN-based VCSEL.​


ecently, Professor Zhang Baoping of the college and others have made new progress in gallium nitride vertical cavity surface-emitting lasers (GaN-based VCSELs) . The relevant results were published under the title "Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity" In the journal Nano-Micro Letters.

In this work, InGaN quantum dots (QDs) grown in SK mode are used as the active region to effectively reduce the polarization electric field and improve luminous efficiency, achieving the lowest threshold excitation of green GaN-based VCSEL at room temperature under continuous current injection. The threshold current density is only 51.97 A/cm2, and the lasing wavelength is 524.0 nm. The self-assembled InGaN QD epitaxial wafer used, its high IQE and δ-function-like density of states are the key to achieving low threshold current. In addition, the device's short cavity (~4.0 λ) increases the spontaneous emission coupling factor to 0.094, increases the gain coefficient, and effectively reduces optical loss. The AlN current limiting layer and electroplated copper support substrate in VCSEL effectively improve the heat dissipation performance of the device . The above research results provide an important foundation for realizing high-performance GaN-based VCSEL.

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Deleted member 24525

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Either way is clear the SMEE needs some domestic competition, in every single segment of China semiconductor industry there is multiple domestic companies competing with each other offering close to same products, ion implantation, CMP, etching, ALD, CVD, PVD, metrology, materials and so on, this competition is forcing establish companies like Naura and AMEC to differentiate their products even more, except lithography, SMEE is the only company that doesn't have a domestic competitor.

Nata was slow with their ArF and ArFi photoresist when they were the only player but now that multiple companies are launching their ArF and ArFi photoresist, NOW they are in a hurry.
I agree with this. I understand that at the moment DUV is not the most pressing constraint on capacity expansion in China, but still, from around the end of the 14th FYP onward it's going to be a very important capability to have.
I just cannot understand why SMEE of all firms was chosen to be the main integrator and project coordinator for such an essential piece of equipment. Surely the differences in civilian and military-end lithography machines cannot be so dramatic as to make it infeasible for the CETC, with all of its resources and talent, to make the switch?
@hvpc Do you personally know or have an idea as to why the CETC was not chosen to be the principal company responsible for DUV? This has been bugging me for years and I would be grateful for a professional opinion.
 

hvpc

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I agree with this. I understand that at the moment DUV is not the most pressing constraint on capacity expansion in China, but still, from around the end of the 14th FYP onward it's going to be a very important capability to have.
I just cannot understand why SMEE of all firms was chosen to be the main integrator and project coordinator for such an essential piece of equipment. Surely the differences in civilian and military-end lithography machines cannot be so dramatic as to make it infeasible for the CETC, with all of its resources and talent, to make the switch?
@hvpc Do you personally know or have an idea as to why the CETC was not chosen to be the principal company responsible for DUV? This has been bugging me for years and I would be grateful for a professional opinion.
I don’t know exact reason why the government selected SMEE over CETC. But at the time of the decision SMEE is the more commercially successful of the two.
 
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