Chinese semiconductor industry

ansy1968 said:

Yeah such a waste, we need people like him to enhance the discussion, we may not like his bluntness BUT we are here to learn and he is eager to share.

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He didn't get banned for his "bluntness"; he got banned for his lack of logic (I say X; I offer no evidence because that's what you want so that's what I'm NOT going to give you; if you don't have counter evidence to an empty claim, I win.), irrational anger (Huawei rejected me because they're all retarded and if you disagree, your mom honks like a donkey in bed), and childish fits (Deino the rapist raped me again, everyone look at Deino the rapist raping me). And also, right before his last ban about 2 years ago, he said China would take at least 10 years to have an EUV machine. Before that, he claimed that China should offer Taiwan its independence in exchange for TSMC, and when asked how that horribly stupid and morally corrupt deal even attempts to solve the lithography issue since they rely on ASML, he had no answer. So I much prefer the thread now with experts who are more knowledgeable than him and are not insane like him with several accounts pretending to be a pilot, a professional landlord, etc... while sending private messages to members to fish for their personal contacts.

UFJ Technology has overcome the "stuck neck" problem of core components. In terms of micro-focus X-ray sources, it has completed the mass production of a series of closed hot cathode micro-focus ray sources, achieving independent controllability of domestic X-ray sources. In terms of services It continues to play a leading role in national strategies and promoting 100% localization of X-ray intelligent inspection equipment.

tokenanalyst said:

UFJ Technology has overcome the "stuck neck" problem of core components. In terms of micro-focus X-ray sources, it has completed the mass production of a series of closed hot cathode micro-focus ray sources, achieving independent controllability of domestic X-ray sources. In terms of services It continues to play a leading role in national strategies and promoting 100% localization of X-ray intelligent inspection equipment.

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I think ( i guess ) X Ray lithography for graphene materials

Vichysoy said:

I think ( i guess ) X Ray lithography for graphene materials

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Integrated Circuits, Materials, Metals, Electronics assembly and so on.

helo Ascend 710... made in China

tokenanalyst said:

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography​

Abstract​

In this study, a series of molecular resists based on a bis(4-butoxyphenyl) sulfone core attached to a varying number of radiation-sensitive triphenylsulfonium units (BPSSn, where n = 2, 3, and 4) were designed and synthesized. We evaluated the physical properties of these resists, including solubility, film-forming ability, and thermal stability, to assess their viability as photoresist materials. The materials allowed for negative patterning through organic development in both e-beam and extreme ultraviolet (EUV) lithography. Through manipulating the average number of triphenylsulfonium units in the molecule and optimizing the developing agents, BPSS4 resists demonstrated high resolution (16/13 nm) and low line edge roughness (2.5/2.5 nm) in e-beam and EUV dense line patterning, respectively. We further explored the EUV and e-beam exposure mechanisms of BPSS4 resist using X-ray photoelectron spectroscopy. We also investigated the outgassing behavior of the film during EUV irradiation via in situ mass spectroscopy. Remarkably, this nonchemically amplified resist exhibited high etch resistance and accurate pattern transfer capabilities. The etch durability of BPSS4 (under SF6/O2 plasma chemistry) with respect to the Si wafer was 21:1, highlighting its significant potential for practical applications in high-resolution lithography.

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woah, this was not expected. So the photoresist for EUV was usually based on heavy metal containing hard masks such as Hf or Zr oxide based organometallic nanoparticles. That is because the EUV absorption cross section scales complexly but generally increases with atomic number.






Organometallic resists are less tunable compared to organics since the functional component is a simple binary oxide, and have problems with contamination, as metal oxides are very etch and dissolution resistant, and you're relying on energy transfer from the oxide to the organic part that determines the bonding for contrast.


This is a purely organic EUV photoresist which makes it much more scalable and most of all, avoids metal contamination issues.

FairAndUnbiased said:

woah, this was not expected. So the photoresist for EUV was usually based on heavy metal containing hard masks such as Hf or Zr oxide based organometallic nanoparticles. That is because the EUV absorption cross section scales complexly but generally increases with atomic number.

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Organometallic resists are less tunable compared to organics since the functional component is a simple binary oxide, and have problems with contamination, as metal oxides are very etch and dissolution resistant, and you're relying on energy transfer from the oxide to the organic part that determines the bonding for contrast.

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This is a purely organic EUV photoresist which makes it much more scalable and most of all, avoids metal contamination issues.

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Could be that organometallic resist more susceptible to secondary electrons affecting the resolution?

Maikeru said:

Not sure if this qualifies as a bad take but it seems not:

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There is nothing new in this article. It also has some bogus statements. For example:

"In terms of chip design, Huawei could soon be on par with global leaders, such as the American technology company Qualcomm."

Huawei's HiSilicon chip design team is actually more skilled than Qualcomm's. Huawei can design their own CPU core while Qualcomm thus far has failed to do this, only making minor changes to licensed ARM cores. HiSilicon even put SIMT on the core. It was precisely because of this that the US sanctioned Huawei. They were afraid of Qualcomm (and Apple) losing market share.

"Already, Huawei has been found to be indirectly siphoning Taiwanese firms’ crucial chip-making expertise through a discreet network of affiliated chipmakers."

Is this about that Nikkei article talking about Taiwanese companies building water treatment plants for Chinese chip fabs? Is that the "crucial chip-making expertise"?

Back in the bad old days, the water with the solvents was just dumped downriver.

It could be a ban on A800 and H800 or even more restrictions to procure A100 and H100 from intermediaries. Not sure if Alibaba, Tencent and Bytedande have stocked up enough chips and domestic alternatives are widely available yet.

tokenanalyst said:

Could be that organometallic resist more susceptible to secondary electrons affecting the resolution?

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I think the issue might be more that organic to metal-oxide transfer is not as efficient as organic to organic transfer. My understanding is you’re depending on more efficient photon or electron transfer to increase the amount of photon absorption to increase contrast, and line roughness comes from high variance with the resist materials reaction to photon excitation which itself is due to inefficient or inconsistent excitation. Secondary absorption is probably a good thing, and insofar as it isn’t (for example if what you were referring to with secondary electron effects is scattershot from free electrons or ions) what probably matters more is how consistent the behavior is rather than whether there is a secondary transfer effect, since your line resolution should be determined by consistency of photochemical reaction along the whole line edge.

But I suspect the even bigger deal is that for higher energy photon absorption you inevitably need to worry about secondary photochemical breakdown which can lead to contamination of the wafer itself. Molecular breakdown of metal oxide organic complexes inevitably lead to metal contamination as the lighter elements broken down from the metal organic complex would typically react more with each other to form gases while residual metallic elements freed from the breakdown reaction is more likely to interact with trace gases and wafer layer elements into heavier molecules that then bond to the wafer. An all organic resist is probably more likely to reform into gases, organics, and other light non metallic molecules that are much easier to clean up afterwards.