SMIC is testing the domestic 193nm ArF immersion DUV lithography machine ZT
The 193nm ArF immersion DUV lithography machine that SMEE is testing in small batches is against ASML's NXT: 2000i model.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.