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tokenanalyst

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SMIC is testing the domestic 193nm ArF immersion DUV lithography machine ZT

The 193nm ArF immersion DUV lithography machine that SMEE is testing in small batches is against ASML's NXT: 2000i model.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.
 

tphuang

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SMIC is testing the domestic 193nm ArF immersion DUV lithography machine ZT

The 193nm ArF immersion DUV lithography machine that SMEE is testing in small batches is against ASML's NXT: 2000i model.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.
wait, where did this come from?
 

ansy1968

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SMIC is testing the domestic 193nm ArF immersion DUV lithography machine ZT

The 193nm ArF immersion DUV lithography machine that SMEE is testing in small batches is against ASML's NXT: 2000i model.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.
Prof can I open the champagne or I still need to chill it. ;)
 
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ansy1968

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wait, where did this come from?
Sir to be honest we're expecting this, SMEE SSA800 goal is to match NXT2000i, the prototype unit already achieved the performance of NXT1980i, this iteration is what the Chinese FAB want as SMIC coordinate with SMEE to improved it further.;)

The next surprise is the mythical 22NM SSA900, hopefully next year we may have an unofficial unveiling.;)
 

WTAN

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SMIC is testing the domestic 193nm ArF immersion DUV lithography machine ZT

The 193nm ArF immersion DUV lithography machine that SMEE is testing in small batches is against ASML's NXT: 2000i model.
This machine adopts the local immersion device of Kaier Electromechanical, which only injects or discharges the immersion liquid in the space between the lower surface of the last lens of the projection objective lens and the photoresist of the silicon wafer.
In the process of scanning, exposure, liquid supply and recovery, etc., air bubbles generated in the immersion liquid, photoresist substances dissolved in water, and residual liquid on the silicon wafer after exposure may all cause contamination. To rule out the effects of air bubbles and contaminants on lithography, the current solution is to maintain a steady flow of immersion liquid in a partial immersion device.
Using the double worktable technology in the immersion lithography machine can continue to use the existing alignment, focus and leveling system, avoiding the detection problem in the immersion state.
Looks like SMIC is benchmarking the SMEE 28NM DUVL against the NXT2000i DUVL.
This means the SMEE 28NM DUVL has generally better performance than the NXT1980i.
The SMEE 28NM DUVL has from the start been developed as an analogue to the NXT1980i DUVL which was the most advanced ASML DUVL available back then in China.
It would make sense that during the DUVL R&D process by SMEE, certain improvements were made which resulted in the SMEE product exceeding the performance of the 1980i.
 
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