NAURA: Whaaat? your fab can't get the latest ASM epitaxial tool.
NAURA: Don't worry friend we have you cover.
NAURA achieves full coverage of epitaxial process equipment
Release time: 2023-06-30
The manufacture of advanced chips requires nearly perfect crystal materials. Epitaxy equipment is the key equipment for growing crystal materials and is widely used in integrated circuits, power devices, silicon materials, third-generation semiconductors and other fields. As a pioneer of China's epitaxial process equipment technology, North Huachuang started the research and development of epitaxial equipment as early as 2010. After more than ten years of technological precipitation and innovative breakthroughs, more than 20 mass-produced epitaxial equipment have been released, and the cumulative shipments Nearly 1000 cavities.
Excellent product quality
Since the first silicon epitaxial equipment successfully entered the client in 2012, NAURA has formed a series of epitaxial equipment series products with core technology advantages and complete categories and wide applications. Capable of epitaxial growth technology for various materials: including monocrystalline silicon, polycrystalline silicon, silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), etc., covering integrated circuits, power devices, radio frequency, semiconductor lighting and other fields Application requirements.
— NAURA Epitaxy Process List —
Achieve full coverage from 4 inches to 12 inches: including 8-inch and below single-chip and multi-chip large-capacity silicon epitaxy equipment, 12-inch silicon epitaxy equipment, 4/6/8-inch silicon carbide epitaxy equipment, 8-inch and below single-chip and Multi-chip GaN-on-Si epitaxial equipment with large capacity.
— 4-12 inch single-chip/multi-chip epitaxial equipment diagram —
Popular is well-known in the industry
With great efforts, after more than ten years of accumulation in technology and market, NAURA's epitaxy products have made remarkable achievements and have continuously won praise from customers and the industry. The company's first 8-inch silicon epitaxy equipment in the field of epitaxy broke the industry's competitive landscape and became the mainstream Baseline (benchmark) product in the industry, pushing the industry to a new level. Since its launch, it has almost won all orders from the domestic market.
The 12-inch atmospheric pressure silicon epitaxial equipment has broken through a series of key technologies and has been widely recognized by the market: in the field of power devices, it has continuously mass-produced more than 200,000 pieces at the client so far; The terminal has achieved stable mass production, and various key indicators have reached the international mainstream level. In addition, with its excellent process performance and market performance, the product won the fifth "IC Innovation Award" of China Integrated Circuit Innovation Alliance in 2022.
Facing the hot-invested silicon carbide field, North Huachuang has rapidly developed silicon carbide epitaxial products with its profound technology accumulation. At present, the products have achieved sales of nearly 200 units, accounting for half of the market. Facing the 8-inch silicon carbide market, NAURA's forward-looking 6/8-inch compatible multi-chip silicon carbide epitaxial equipment will soon be put into the market, which will greatly reduce customer operating costs and trigger a new round of market boom.
Innovative always research and always new
Since 2010, North Huachuang has benchmarked the cutting-edge technology of the industry, intensively studied the market and customer needs, and through continuous innovation, has broken through and optimized a series of airflow fields, heating fields, gas system systems, temperature control, pressure control, and motion systems. Key technologies, and customized research and development according to customer needs.
The multi-zone temperature control technology can improve the crystallization quality of the epitaxial layer, optimize the doping distribution of the epitaxial layer, and meet various technical requirements. High-temperature clean chamber technology can reduce crystal impurities and defects, improve the crystal quality of the device layer, and improve device performance. The multi-zone horizontal airflow field design realizes unidirectional laminar flow and no reverse flow turbulence, which can broaden the epitaxial process window, improve the quality of the epitaxial interface, and realize the controllability of the epitaxial film layer and the high performance of the device. The simulation technology of heating field and air flow field under normal pressure and reduced pressure has improved the design efficiency of the process chamber and provided theoretical support for solving specific problems.
North Huachuang will always adhere to the exploration and research of cutting-edge technology in the industry, and is committed to creating forward-looking professional technologies and solutions, creating value for customers with excellent epitaxy equipment and innovative professional services, promoting industrial progress, and creating infinite possibilities !
Still NAURA needs to develop a tool for Silicon/Germanium.
