Chinese semiconductor industry

tokenanalyst said:

Semiconductor Institute has made important progress in the research of silicon-based epitaxial quantum dot lasers​

Recently, the research team of Yang Tao and Yang Xiaoguang from the Materials Science Key Laboratory of the Institute of Semiconductors has made important research progress in silicon-based epitaxial quantum dot lasers and their doping regulation.
Silicon-based optoelectronic integrated chips are based on mature, highly integrated, and low-cost CMOS technology, and integrate a large number of functional devices required by traditional optical systems on the same chip at high density, greatly improving the information transmission and processing capabilities of the chip , can be widely used in emerging fields such as ultra-large data centers, 5G, Internet of Things, supercomputers, and artificial intelligence. Due to the low luminous efficiency of silicon (Si) materials, epitaxy of III-V semiconductor materials with high luminous efficiency such as gallium arsenide (GaAs) on a CMOS-compatible Si-based substrate, and the epitaxy and preparation of lasers are recognized as optimal On-chip light source solution. Due to the large lattice mismatch, polarity mismatch and thermal expansion coefficient mismatch between Si and GaAs materials, the development of high-performance silicon-based epitaxial lasers needs to solve a series of key scientific and technical difficulties.

Recently, the research team of Yang Tao and Yang Xiaoguang from the Materials Science Key Laboratory of the Institute of Semiconductors has made important research progress in silicon-based epitaxial quantum dot lasers and their doping regulation. The team used molecular beam epitaxy technology to reduce the defect density of silicon-based GaAs materials to the order of 106cm-2 under the condition that the total thickness of the buffer layer is 2700nm. The stacked InAs/GaAs quantum dot structure is used as the active region, and the domain-divided double doping control technology of "p-type modulation doping + direct Si doping" is proposed and applied to the active region for the first time, and a high-temperature working low-power on-chip light source. At room temperature, the continuous output power of the device exceeds 70mW, and the threshold current is 30% lower than that of the p-type doped laser with the same structure. The maximum continuous operating temperature of the device exceeds 115°C, which is the highest value of similar devices in public reports so far. The above technologies and results provide a key solution and core light source for realizing ultra-low power consumption, high temperature stable high-density silicon-based optoelectronic integrated chips.

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tokenanalyst said:

Semiconductor Institute has made important progress in the research of silicon-based epitaxial quantum dot lasers​

Recently, the research team of Yang Tao and Yang Xiaoguang from the Materials Science Key Laboratory of the Institute of Semiconductors has made important research progress in silicon-based epitaxial quantum dot lasers and their doping regulation.
Silicon-based optoelectronic integrated chips are based on mature, highly integrated, and low-cost CMOS technology, and integrate a large number of functional devices required by traditional optical systems on the same chip at high density, greatly improving the information transmission and processing capabilities of the chip , can be widely used in emerging fields such as ultra-large data centers, 5G, Internet of Things, supercomputers, and artificial intelligence. Due to the low luminous efficiency of silicon (Si) materials, epitaxy of III-V semiconductor materials with high luminous efficiency such as gallium arsenide (GaAs) on a CMOS-compatible Si-based substrate, and the epitaxy and preparation of lasers are recognized as optimal On-chip light source solution. Due to the large lattice mismatch, polarity mismatch and thermal expansion coefficient mismatch between Si and GaAs materials, the development of high-performance silicon-based epitaxial lasers needs to solve a series of key scientific and technical difficulties.

Recently, the research team of Yang Tao and Yang Xiaoguang from the Materials Science Key Laboratory of the Institute of Semiconductors has made important research progress in silicon-based epitaxial quantum dot lasers and their doping regulation. The team used molecular beam epitaxy technology to reduce the defect density of silicon-based GaAs materials to the order of 106cm-2 under the condition that the total thickness of the buffer layer is 2700nm. The stacked InAs/GaAs quantum dot structure is used as the active region, and the domain-divided double doping control technology of "p-type modulation doping + direct Si doping" is proposed and applied to the active region for the first time, and a high-temperature working low-power on-chip light source. At room temperature, the continuous output power of the device exceeds 70mW, and the threshold current is 30% lower than that of the p-type doped laser with the same structure. The maximum continuous operating temperature of the device exceeds 115°C, which is the highest value of similar devices in public reports so far. The above technologies and results provide a key solution and core light source for realizing ultra-low power consumption, high temperature stable high-density silicon-based optoelectronic integrated chips.

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FairAndUnbiased said:

Looks like this is depositing GaAs quantum dot structures directly on a Si substrate for chip level integration of the emitter + logic.

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latenlazy said:

I’m *very* interested to see if they can develop a photonics based cpu. Been spending a lot of time seeing where the state of photonics based logic gate design is in the last few years and while it seems they’re not quite ready for prime time there are a lot of candidate approaches. Scalability to be competitive with traditional transistors is still the open question, but if it can be done this will be a game changer.

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FairAndUnbiased said:

I think for now this is just to reduce the cost of laser emitter with integrated logic, all the computing part is still in the electronics of the silicon.

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antiterror13 said:

yeahhh, if it was 10 yrs earlier, would be much more difficult for China

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PopularScience said:

Don't think so. FinFet is much more difficult than 10 years earlier technology.

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PopularScience said:

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How far has Yangtze River Storage's technology and production capacity reached?

In fact, technological progress is secondary, and the most important thing is another point: YMTC is the first company in the entire semiconductor industry to resist the "sanction" of the United States.

Changxin and SMIC are restricted. Only Huawei, YMTC, and Hikvision are called "sanctions". All American equipment cannot be imported at all, and non-US-made products such as advanced process lithography machines are also subject to terminal export controls. Totally out of reach.

Except for the lithography machine, the rest is to slap the American father in the face. In the CCP etching process, AMEC basically "eliminates outdated technologies of Applied Materials".

Moreover, dry etching, the core technical link of multi-layer stacked NAND, happens to be the most powerful strength of AMEC among domestic equipment manufacturers.

Almost all other links are also being de-Americanized and localized. In the absence of any American machines entering the market, they have steadfastly resisted US sanctions. It also opened up in the domestic retail market.

From being hit by sanctions to expanding the market again on a large scale, Huawei has not recovered from 2019 to 2023, but YMTC after the most severe sanction in 2022, and it is already exporting on the face in 2023. Behind this, of course, there are also factors that have long existed as the upstream of the industrial chain, involving a shorter industrial chain, and domestically-made machines have advanced by leaps and bounds in recent years.

As long as YMTC can continue to operate, the breakthrough of domestic semiconductors will only become bigger and bigger.

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