Chinese semiconductor industry
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4 Gens behind Micron? I doubt it ... perhaps 2 Gens
For reference, current known DRAM roadmap: D3X/D2H/D2L/D1x/D1y/D1z/D1a/D1b/Dc/D1d/....../D0a/Dab/D0c…..
CXMT is producing mostly D2L and some D1x DRAM chips. Samsung & Micron are both in HVM of D1b (1-beta) node products. Hynix is a bit behind and won't ramp D1b HVM until later this year.
Micron and Samsung has more D1b wafer output than CXMT D1x output, so stating CXMT is 4 Generations behind the industry leaders is correct.
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This is the roadmap that Samsung shared during their Memory Tech Day.
Someone had questions about whether China/CXMT could makd DDR5/GDDR5 awhile back. This chart should clearly give you an overview of where CXMT stands relative to others in the industry and what sort of product offering they could provide.
At the moment, CXMT is limited to the basic DDR4 & its low power varient, the LPDDR4x. The lagging technical capability is why CXMT is not able to and not advertising product offering in HBM, GDDR, CXL, or higher capacity and capability DDR/LPDDR chips.
And with the US BIS sanction on anything below D18 (D1x), this is also the reason why there's a lot of activities domestically to pursue 3D-DRAM architecture with the larger resolution. The industry as whole, instead are continuing the 2D shrink route and won't be forced to look into 3D-DRAM until D0b.
We may be at risk of falling behind more than 4 generations in DRAM as we optimize and qualify domestic equipment. At the current timeline, we may already be 5 generations behind in DRAM by the time domestic fabs figure out how to work with domestic. equipment.
With all the overhead we have to tackle, domestic DRAM fabs are simply not innovating at the same pace as the industry. It was the case before last Oct's US BIS sanction, it's even more difficult after the sanction.
Someone had questions about whether China/CXMT could makd DDR5/GDDR5 awhile back. This chart should clearly give you an overview of where CXMT stands relative to others in the industry and what sort of product offering they could provide.
At the moment, CXMT is limited to the basic DDR4 & its low power varient, the LPDDR4x. The lagging technical capability is why CXMT is not able to and not advertising product offering in HBM, GDDR, CXL, or higher capacity and capability DDR/LPDDR chips.
And with the US BIS sanction on anything below D18 (D1x), this is also the reason why there's a lot of activities domestically to pursue 3D-DRAM architecture with the larger resolution. The industry as whole, instead are continuing the 2D shrink route and won't be forced to look into 3D-DRAM until D0b.
We may be at risk of falling behind more than 4 generations in DRAM as we optimize and qualify domestic equipment. At the current timeline, we may already be 5 generations behind in DRAM by the time domestic fabs figure out how to work with domestic. equipment.
With all the overhead we have to tackle, domestic DRAM fabs are simply not innovating at the same pace as the industry. It was the case before last Oct's US BIS sanction, it's even more difficult after the sanction.
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What about next generation memory，such as PRAM RRAM MRAM ？
CXMT is D1y, 17nm.
长鑫19nm DDR4内存芯片良率已达75% ，17nm工艺爬升中
D1y is under development. There is no volume
already volumn. read my link 2021 news.
Those are niche memory with small market.
MRAM will mostly be supported by foundries since the architecture resembles logic IC. I am aware tsmc, UMC, GF, Samsung LSI all have MRAM capability and small volume. Domestically, HFC is diving into MRAM.
PRAM and RRAM use case are not really significant enough at the moment.
You must be confused by CXMT’s marketing.
CXMT referred to their first generation DRAM as “1x”. But over time they had admitted it is equivalent to what the industry called “D20” that’s roughly 23nm node.
Their second HVM node, which CXMT and media calls “D1y” is actually what industry calls D1x (based on its bitline, wordline pitch). Based on the actual design pitch, this would be closer to 19nm node.
They currently developing their third generation DRAM node, 16-17nm, is still in development. As of today 2023 they are still trying to developing this. It’s not in production.
the media was duped by CXMT’s node naming before CXMT admitted to the industry on what they are really producing. If you are referring to some media report from 2021 then you are a bit outdated.
min the industry, we benchmark what fabs call their nodes by looking at and compare the actual design dimensions. My assessment and the article claiming 4 generation behind are based on this method.
but, buddy, you are free to believe in your own version of truth. I’m simply providing the standard assessment of the industry. Everyone else has the freedom decide which contradicting info to believe in. Just doing my part to share an “alternate” view.
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