Chinese semiconductor industry

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siegecrossbow

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Why would anyone think that tit for tat would be the best response? From my amateur point of view the retaliation is quite simple. Arrange a meeting between Xi and a Saudi head of state on December 24th so they could sign an agreement for trading oil in RMB.
XI JINPING PROPOSES THAT CHINA WILL MAKE FULL USE OF THE SHANGHAI OIL, GAS TRADING CENTRE PLATFORM TO CARRY OUT YUAN SETTLEMENT OF OIL, GAS TRADE..

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Lol.
 

tokenanalyst

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But the Dutch are American vassals. I live here and its very unfortunate. The Dutch (and other European countries too) have towed the line on American foreign policy for decades. Russia, Iran, Iraq, Afghanistan, Israel, etc you name it. I can't remember a foreign policy issue that the Dutch went against America. They even towed the line on the Iraq War.

Whenever there is discussion about America in the media they never talk about "national interest" but always talk about "the transatlantic interest".

There are even people here who openly say on television that the Netherlands is a outpost of the American Empire! Without any controversy or protest.
Well lets see how far they are willing to serve, ASML position can only be assured in a monopolistic way. ASML can't afford competition to flourish and much less in EUV, they can't allow a nation with as much resources as China to put a nationwide effort (private, state and institutional) to develop this kind of systems. ASML needs to suppress competition in their field existing and not exisitng, it doesn't matter if it is Nikon, Canon, SMEE or an unnamed future startup, they now that things in the lithography field can go south pretty fast, ask Nikon or Perkin Elmer.
But too early to tell, lets see what happens
 

antiterror13

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Global Semiconductor Equipment Billings Increase 9% in Q3 2022​


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China is the biggest market for semi equipment in Q3

Europe is very tiny as a region ($1.67B ) compared to China $7.8B or Taiwan $7.3B ... imagine how small per country in EU

Where is the UK? ... or part of EU in regard to the stats ?

Interesting the stats put North America $2.6B .. why not USA, Canada and Mexico? .. just too small maybe ?
 

SanWenYu

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"该技术利用成熟的后端工艺将新型二维材料集成在硅基芯片上,并利用两者高度匹配的物理特性,成功实现4英寸大规模三维异质集成互补场效应晶体管。在相同的工艺节点下实现了器件集成密度翻倍,并获得了卓越的电学性能。"

"目前,基于工业化产线的更大尺寸晶圆级异质CFET技术正在研发中。该技术将进一步提升芯片的集成密度,满足高算力处理器,高密度存储器及人工智能等应用的发展需求,助力打破国外在大规模集成电路领域的技术封锁。"

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Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide​

Abstract​

Complementary field-effect transistors—which have n-type and p-type field-effect transistors (FETs) vertically stacked on top of each other—can boost area efficiency in integrated circuits. However, silicon-based complementary FETs suffer from several issues, including difficulty in balancing electron and hole mobility. Here we report heterogeneous complementary FETs that combine p-type FETs made with silicon-on-insulator technology and n-type FETs made with two-dimensional molybdenum disulfide (MoS2). Through mobility matching and multiple-gate modulation of the MoS2, the mobility mismatch issue of fully silicon-based systems can be addressed. Our integration approach leverages the maturity of the silicon process, the low thermal budget of MoS2 and the low aspect ratio of the device structures to reduce process complexity and device degradation. We use the approach to create a complementary FET inverter that exhibits a voltage gain of 142.3 at a supply voltage of 3 V, and a voltage gain of 1.2 and power consumption of 64 pW at a supply voltage of 100 mV. We also develop a four-inch fabrication process for the silicon–two-dimensional complementary FETs.

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复旦大学团队合作发明晶圆级硅基二维互补叠层晶体管​

传统集成电路技术使用平面展开的电子型和空穴型晶体管形成互补结构,从而获得高性能计算能力。其密度的提高主要通过缩小单元晶体管的尺寸来实现。例如7nm节点以下业界使用极紫外光刻技术实现高精度尺寸微缩。极紫外光刻设备复杂,在现有技术节点下能够大幅提升集成密度的三维叠层互补晶体管(CFET) 技术价值凸显。然而,全硅基CFET的工艺复杂度高且性能在复杂工艺环境下退化严重。因此,研发与我国主流技术高度兼容的CFET器件与集成,对于自主发展新型集成电路技术具有重要意义。

针对这一关键技术,复旦大学微电子学院周鹏教授、包文中研究员及信息科学与工程学院万景研究员创新地提出了硅基二维异质集成叠层晶体管。该技术利用成熟的后端工艺将新型二维材料集成在硅基芯片上,并利用两者高度匹配的物理特性,成功实现4英寸大规模三维异质集成互补场效应晶体管。在相同的工艺节点下实现了器件集成密度翻倍,并获得了卓越的电学性能。北京时间2022年12月9日,相关成果以《硅和二硫化钼异质互补场效应晶体管》(“Heterogeneous Complementary Field-effect Transistors Based on Silicon and Molybdenum Disulfide”)为题发表于国际顶尖期刊《自然-电子学》(Nature Electronics)。

复旦大学研究团队将新型二维原子晶体引入传统的硅基芯片制造流程,实现了晶圆级异质CFET技术。相比于硅材料,二维原子晶体的单原子层厚度使其在小尺寸器件中具有优越的短沟道控制能力。

研究团队利用硅基集成电路的标准后端工艺,将二硫化钼(MoS2)三维堆叠在传统的硅基芯片上,形成p型硅-n型二硫化钼的异质互补CFET结构。二硫化钼的低温工艺与当前硅基集成电路的后端工艺流程高度兼容,大幅降低了工艺难度且避免了器件的退化。同时,两种材料的载流子迁移率接近,器件性能完美匹配,使异质CFET的性能优于传统硅基及其他材料。例如其反相器增益在3V供电时高达142.3 V/V ,在超低压供电0.1V时其增益达1.2 V/V且功耗低至64pW。团队还验证了该新型器件在 “全在一”光电探测及气体传感中的应用。

目前,基于工业化产线的更大尺寸晶圆级异质CFET技术正在研发中。该技术将进一步提升芯片的集成密度,满足高算力处理器,高密度存储器及人工智能等应用的发展需求,助力打破国外在大规模集成电路领域的技术封锁。

相关工作得到了科技部重点研发计划、国家自然基金委杰出青年基金、上海市探索者计划等项目的资助,以及教育部创新平台的支持。

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tokenanalyst

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High-Precision Spot Detection of Driving Laser for Extreme Ultraviolet Lithography Light Sources
Xinpeng Li1,2, Deyang Yu1,*, Jin Guo1, Fei Chen1, and Qikun Pan1


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Currently, the laser induced plasma(LPP) technology is the best method to obtain high quality extreme ultraviolet(EUV)light source, whereby a high-powering-frequency,short-pulse CO2 laser under the main oscillation power amplification technology is used to bombard a droplet tin target to obtain high-quality extreme ultraviolet signals. In an EUV lithography light source system, the laser beam direction is significantly affected by the cascade when the laser beam passes through the four-stage amplification system. During the amplification process, the optical components in the optical path between the amplifiers feature different thermal distortions under different laser powers; all the four-stage amplifiers used are high-power laser amplifiers, and the vibrations caused by the cooling device during operation are unavoidable. These factors cause the center of the laser beam to deviate from the optical axis and affect the EUV conversion efficiency. Therefore, for EUV lithography light source systems, the further research on beam pointing stability is necessary to achieve a certain EUV conversion efficiency. At present, four-quadrant detectors are widely used in high-precision laser measurements owing to their fast response,high position revolutionizing measurement accuracy, and simple data processing.However,a high-precision spot location algorithm based on a four-quadrant detector is generally complex.Thus,during high-repetition-frequency pulse signal detection, the real-time requirements of spot location calculations cannot be met.Therefore,it is necessary to develop a new algorithm that considers the accuracy of spot location detection and its real-time performance.
In this studied first obtain the four-quadrant detector output signal under the Gaussian distribution model for spot energy distribution and subsequently calculate the initial solution for the spot position under the influence of the detector radius and dead zone using the normalization and difference algorithm. The initial spot position solution is a transcendental equation, and its analytical solution cannot be derived using a mathematical method. The expression for the actual position of the spot centroid is then obtained using the approximate decomposition method, which compensates for the influence of the spot radius, detector radius, and dead zone width on the actual position of the spot centroid. Finalist improve the solution accuracy correction factor is established, and the error characteristics of the correction factor are used to correct the actual position of the spot. This can help improve the spot position detection accuracy and detection range, without increasing the complexity of the algorithm. According to the detection principle of the four-quadrant detector, electrical signals from the four quadrants of the detector should be obtained simultaneously; if the acquisition of the electrical signals from each quadrant is not synchronized, the accuracy of the spot position solution is affected.Therefore,a multi-channel synchronous acquisition and processing circuit is designed for the acquisition of detector output signals ensure the accuracy and real-time acquisition of the signals.
According to the analysis of the simulation results, the root mean square error of the second-order error compensation algorithm is 0.0115;after improvement, the root mean square error is reduced to 0.003,which is 73.91% lower. The maximum error of the second-order error compensation algorithm is 0.0372 mm; after improvement, the maximum error is reduced to 0.0076 mm, which is 79.56% lower, and the absolute error is less than 0.005 mm.The detection range of the spot position is expanded from -0.12 mm≤x≤0.12 mm to -0.59 mm≤x≤0.59 mm, which is approximately five times larger. The average absolute error value in the absolute error range of less than 0.005 mm is reduced from 0.0025 mm to 0.0019 mm, which is approximately 24% lower(Fig.4). The spot position detection results are analyzed. It is shown that the root mean square error of the second-order error compensation algorithm is 0.0248, and the root mean square error of the second-order extended error compensation algorithm is 0.0042,i.e.,a reduction of 83.06%. The maximum absolute error of the second-order error compensation algorithm is 0.0625 mm, and the maximum absolute error of the second-order extended error compensation algorithm is 0.0092 mm, i.e., a reduction of 85.28%. The average absolute error of the second-order error compensation algorithm is 0.0206 mm, and the average absolute error of the second-order extended error compensation algorithm is 0.0034 mm, a reduction of approximately 83.50%. Notably, the spot position detection accuracy is better than 19 μrad in the detection range of -0.5 mm≤x≤0.5 mm(Fig.8).
The simulation analysis and experimental results reveal that the detection range of the second-order extended error compensation algorithm is considerably larger than that of the second-order error compensation algorithm under the same detection accuracy. Compared with the traditional polynomial algorithm, the second-order extended error compensation algorithm offers clear advantages and practicability, significantly improving the detection accuracy of the spot position over a wide detection range. Based on the abovementioned discussion, the results of this work are expected to help realize the wide-range ,real-time, and high-precision detection of the spot position for an ultraviolet lithography source driven by a high-repetition-frequency narrow-pulse CO2 laser.

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tphuang

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Europe is very tiny as a region ($1.67B ) compared to China $7.8B or Taiwan $7.3B ... imagine how small per country in EU

Where is the UK? ... or part of EU in regard to the stats ?

Interesting the stats put North America $2.6B .. why not USA, Canada and Mexico? .. just too small maybe ?
Europe is really dropping the ball when it comes to investment here. That level of investment means they are only able to build industrial chips, which they are probably okay with. Semiconductor is one of the few industries where gov't can actually really help its domestic industry by footing the bill for equipments. Equipment Capex is so high compared to other costs.

China is where all the demand for SiC power electronics is. Because most of the world's solar power inverter and electric car industry is in China. So I expect China to quickly expand production in the sector.
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Now they have English translation up for the article I was talking about. BYD is really looking to expand its own production and get more from other Chinese fabs. Otherwise, it's waiting in line from Bosch and ST, while they serve Tesla first.

IGBTs, SiC and GaN power chips are all areas that different Chinese fabs are adding capacity right now.
 
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