I share this to read what people have to say.
Chinese semiconductor industry
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- In this work, a 2.5 × 2.5 mm2 large-area 4H-SiC Schottky barrier photodiode with a grid-shaped semitransparent metal electrode is designed and fabricated for extreme ultraviolet (EUV) detection
- Based on a synchrotron radiation source, the photo-response characteristics of the photodiode is measured between 5nm and 140nm
- EUV detectors are the key component used for monitoring and calibrating photon beam intensity
So, this was obviously used for testing EUV light, sourced from either the SSMB or SSRF, or both. Even more interesting that 5nm-140nm wavelengths were tested. Unlike LPP generated EUV, synchrotrons can easily tune the wavelength and in a very real sense make up for photoresist sensitivity that might be most optimal for wavelengths other than 13.5nm. Imagine using 11.2nm instead of 13.5nm and realizing <7nm features using the same 7nm process. Conversion efficiency isn't as big an issue so tuning the wavelength would achieve what would otherwise need lithium powered LPP EUV.On a related note, does anybody know how photoresists would react with uber powered synchrotron generated EUV source power in the multi-kilowatt range? I imagine a synchrotron driven EUV litho machine would simply run faster. With that much power, photoresist parameters could be looser such that photoresists would be an easier bottleneck to crack vs photoresist designed for much lower powered EUV light sources. Photoresist over-exposure might also become an issue on the flip side so comments to this are appreciated.
Damn, asking the real questions. Are you in semiconductor industry?Very interesting!
- In this work, a 2.5 × 2.5 mm2 large-area 4H-SiC Schottky barrier photodiode with a grid-shaped semitransparent metal electrode is designed and fabricated for extreme ultraviolet (EUV) detection
- Based on a synchrotron radiation source, the photo-response characteristics of the photodiode is measured between 5nm and 140nm
- EUV detectors are the key component used for monitoring and calibrating photon beam intensity
On a related note, does anybody know how photoresists would react with uber powered synchrotron generated EUV source power in the multi-kilowatt range? I imagine a synchrotron driven EUV litho machine would simply run faster. With that much power, photoresist parameters could be looser such that photoresists would be an easier bottleneck to crack vs photoresist designed for much lower powered EUV light sources. Photoresist over-exposure might also become an issue on the flip side so comments to this are appreciated.
Synchrotron EUV source is really good for those reasons - maintenance, tunability and power.
For example 13.5 nm EUV absorbance causes photopolymerization of even ppb organics onto optical surface, which requires vacuum wafer chamber and H2 purging of optics chamber. The Sn droplet is more or less isotropic emitter so the EUV radiation is not collimated by default. and you have to have a Sn contamination management system.
Synchrotron is clean (no vaporizing tin!!), tunable as you said and very high output.
IMO a successful synchrotron EUV source would be like the revolution from incandescent light bulb to CFL.
broadsword
Brigadier
Any idea how far is China in synchrotron EUV research?
The ASML guys are milking dry those immersion scanners. Probably current EUV export controls to China are forcing the company to work on these legacy tools even if they don't want to anymore.
hahaha, this is why the US is madly banning chip manufacturing equipment below 14nm to China.
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