antiterror13
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And could be a penalty clause in the contract too
Chinese semiconductor industry
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And could be a penalty clause in the contract too
Is old news, remembered reading it in this article (60-120 W) while the best Gigaphoton is (60-90W).
Reddit is not the best place for this type of info. Perhaps try semiwiki.com. Copper is already used in the BEOL.
There is currently no successor to HiNA EUVL. There's really no need based on the logic roadmap I shared earlier. HiNA EUVL will have resolution of 8nm and 4nm with double patterning. No one see the need for smallest resolutions.
At this year's SPIE, Intel suggested next step is even higher NA. But I personally don't see why this would be necessary, and I think the cost would be too high for it to make sense.
The logic roadmap calls for some more shrink in the FEOL, changing transistor architecture from FinFET to GAA Nanosheet to GAA worksheet to ComplementaryFET, improvement to the BEOL like backside power rail, and move away from dual damascene copper metallization to via-less metallization, some improvement to the MOL would also be necessary. From the backend side, there's several different "advanced packaging" methods to further improve PPA.
hmmm, interesting. thanks for the link. But latest Cymer XLR-960 is rated 60-90W.
Also, I don't see any performance delta on 2050i that would require 120W. 90W is optional to handle high-dose applications. I am not aware of any new applications that utilize even higher dose than normal that would now require 120W.
Any idea why 120W is needed? I'll also check with some old contacts if I get the chance.
Copper deposition doesn't make much sense for lithography. Could you elaborate?
One of the directions is lower wavelength lithography. Since SSMB synchrotrons are tunable, they'll be able to emit high power, CW light with wavelength smaller than the 13.5nm associated with EUV. In fact, that's the light the EUV optics and masks were built around because that's the only wavelength that can be generated from electron transitions in tin. With SSMB that's flipped around - the wavelength of light will be chosen based on the ease of design and manufacture of the optics and masks.
However, shrinking feature sizes will end soon since it's coming up against physical limits. We won't have 0.1nm chips for the same reason we don't have 20GHz processors - they're physically impossible in the present medium.
Looks like that they have been looking for while a middle ground between EUV and DUVi, to print smaller features at high volume while decreasing the lost in productivity and also for 450mm wafers.
High power 120W ArF immersion XLR laser system for high dose applications
Demand for increased semiconductor device performance at low cost continues to drive the requirements for shrinking the geometry of features printed on silicon wafers. Argon fluoride (ArF) excimer laser systems operating at 193 nm and producing high output power played a key role in patterning of the most advanced features for high volume deep ultraviolet (DUV) lithography over the last decade. Lithographic patterning has progressed from ArF dry to ArF immersion (ArFi) to double and multiple patterning applications, with increasingly tight requirements for the quality of light at 193 nm and improved system reliability. This drove the transition from single chamber laser systems to dual chamber systems with ring cavity amplifier architectures. We are presenting a flexible 90-120W ArFi excimer laser system, developed for high volume multiple patterning manufacturing as well as 450mm wafer applications. Light source design is based on dual-chamber architecture with ring cavity power amplifier
these are all very old papers. for 450mm scanner, I'd understand the need for higher power and frequency laser since that would be necessary to keep up with a 450mm stage that needs to operate at a higher scan speed. let me check with some people that are familiar with this system and the laser then I share with you my findings later.
The good old days when everyone doubted if EUV would ever be a thing.
Well, for reference the specific question was:
and the reply was:
This as far as I know was from a guy who previously worked on carbon fiber composite materials before switching to semiconductor R&D for <5nm nodes for TSMC et al, so can't testify as to how plausibly credible it sounds.
Wanye Enterprise: In the first half of the year, orders for integrated circuit equipment exceeded 750 million yuan, and related business income increased by about 150% year-on-year
On the evening of July 14, Wanye Enterprise disclosed its 2022 semi-annual performance forecast. From January to June 2022, the company and its holding subsidiaries accumulated a total of more than 750 million new integrated circuit equipment orders, and the income of the integrated circuit special equipment manufacturing business was higher than the previous one. The year-on-year increase of about 150% was mainly due to the accelerated production expansion of China's local integrated circuit fabs, the successful delivery of its low-energy large-beam ion and high-energy implanters to customers, and new equipment purchase orders signed by many customers.
At this stage, Wanye is accelerating its deployment in the field of integrated circuit front-end equipment. The company's holding subsidiary, Keystone, has won batch orders for several 12-inch integrated circuit equipment from important customers in the first quarter of 2022, including low-energy large-beam ion implanters and low-energy large-beam ultra-low temperature ion implanters. In late April this year, Keystone entered the first batch of whitelists for resumption of work and production by the Shanghai Municipal Commission of Economy and Information Technology, and successfully delivered the first batch of multiple sets of large-beam ion implanters in batch orders to customers, which will be delivered stably on schedule. So far in 2021, 4 different types of ion implanter equipment developed by Keystone have been successfully verified and accepted at the client, including low-energy large-beam ion implanter, low-energy large-beam heavy metal ion implanter, and low-energy large-beam ultra-low temperature ion implanter and high-energy ion implanters. At present, the company has established good cooperative relations with core component suppliers, has a stable supplier system, and has a leading position in the domestic ion implantation industry.
From the perspective of operating conditions, the company is in the stage of ramping up its production capacity. Jiaxin Semiconductor, another holding subsidiary of the company, will mainly cover etching machines, rapid heat treatment/fade, film deposition, single-chip cleaning machines, tank cleaning machines, and exhaust gas treatment. , robotic arms and other fields, the layout of the mainstream equipment market such as 12-inch and 8-inch. At present, Jiaxin Semiconductor's 109-mu R&D and manufacturing base is under construction. After the production capacity is released, it will continue to promote the high-quality development of the company's "1+N" integrated circuit equipment platform.
It is understood that at present, the continuous expansion of local fabs has driven the demand for domestic semiconductor equipment to continue to be strong, and the industry is in an upward channel. In the future, Wanye will actively expand the market to develop customers, promote the application of equipment in various processes and process nodes, and drive the integrated circuit business to usher in rapid development.
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