Chinese semiconductor industry

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tokenanalyst

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SMEE is a small firm. also limited funding but despite all these problems, they are very technical advance to produce DUV 28nm. you know, two Chinese high tech companies closely working with them. can't disclose their names.
SMEE is itself owned by the Shanghai Electric group, a big company. Without going to much into detail, by mapping the information, the lithography project involves a lot of companies, obvious more than two, backed by financial groups and a lot of research institutions including recently formed ones working towards this goal. Is a giant project. I think the goal is not to replace ASML, for now, but to have tools to support sanctioned companies like Hisilicon.
 

Hitomi

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The block is directly from the Dutch government. The ASML itself has always been against export controls. I really hope the current gov falls though. The VVD is pro-American.
Slightly off topic but would there be any party with a reasonable chance of replacing the current government that could possibly lift the EUV ban because I personally doubt so other than some fringe parties.
 

ansy1968

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Bro, this mythical SSA900 you created is now going main stream. It’s on Wikipedia now:

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!!!

if it’s on Wikipedia, it must be true, right? : )

we can trace the source of SSA900 back to you. Wikipedia referenced @tinrobert’s article, and I recall you mentioning you were flattered that he referenced it off of you.

how much of this is a case of self fulfilling prophecy? It appears to me many are watching SDF, drawing from information here, and talking about SSA900, a “22nm ArFi” system expected to be released in 2023. a simple search of “SSA900” in this thread will reveal these are same info as what you had speculated since the beginning of this year.

even though I want to believe in your speculations, I yearn for more supporting evidence to substantiate this claim.

have you more data to share with us from @WTAN, @Oldschool , and @foofy to support this mythical SSA900 of yours?
@hvpc here it is bro the mythical beast Its from the book of Ho-Meir...lol Yeah I know its a corny joke BUT please bear with me. ;) and bro that rumor came from @WTAN, I'll find his post here and repost it again, the credit should be his and I hope he post more. :cool:

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The lithography machine has a maximum linewidth resolution of 22 nanometers in a single exposure at a wavelength of 365 nanometers. The project breaks through ...

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At present, China's Shanghai Microelectronics Technology Company has made a breakthrough in the 22nm lithography machine, and has realized the 22m process.


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Aug 21, 2020 — As early as 2018, Chinese researchers produced a super-resolution lithography machine with a minimum process node of 22 nanometers. As long as ...


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In addition, Shanghai Microelectronics is developing an ArF immersion lithography machine, which can cover 45-22nm. Earlier, Shanghai Microelectronics reported ...
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ansy1968

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@hvpc here it is bro circa May 1 2020 from @WTAN and bro check out his discussion with @tidalwave, it was my baptism in the world of IC and I was hook ever since.

WTAN

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There has been a recent breakthrough in DUV Lithography in China.
SMEE has just in April 2020 newly developed a 22nm Dual Stage Immersion Lithography machine. This means SMEE has caught up with ASML in DUV Lithography machine technology.
When released, it will be able to produce 7nm Chips using Multi Patterning.
This is a step forward in China being able to produce the latest Chips using locally made Lithography equipment.
The next step is for China to start the Project for EUV Lithography Machines in order to produce Chips 5nm and smaller.
Will forward the article soon.

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WTAN

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This article talks about SMEE latest 22nm Lithography machine.

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ansy1968

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@hvpc and bro from @Oldschool regarding SSA800 28nm DUVL check the overlay accuracy at 2.5nm same with ASML 1980i, 2000i and the latest 2050i, I believed with improved iteration the mythical SSA900 is a possibility.

SMIC Chengdu foundry, using Shanghai microlithography machine SSA800/10W immersion lithography machine Parameters: Lens NA: 1.35 Single exposure resolution: 38-41nm Double workpiece table: DWSi, the productivity is 200 wafers per hour Round overlay accuracy: better than 2.5nm Design index: able to meet the process requirements of 28nm planar planner transistor logic circuit under single exposure conditions​

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• 10 months ago • 10 months ago • Favorites
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SMIC Chengdu foundry, using Shanghai microlithography machine SSA800/10W immersion lithography machine Parameters: Lens NA: 1.35 Single exposure resolution: 38-41nm Double workpiece table: DWSi, the productivity is 200 wafers per hour Round overlay accuracy: better than 2.5nm Design index: able to meet the process requirements of 28nm planar planner transistor logic circuit under single exposure conditions
 

hvpc

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@hvpc here it is bro the mythical beast Its from the book of Ho-Meir...lol Yeah I know its a corny joke BUT please bear with me. ;) and bro that rumor came from @WTAN, I'll find his post here and repost it again, the credit should be his and I hope he post more. :cool:

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The lithography machine has a maximum linewidth resolution of 22 nanometers in a single exposure at a wavelength of 365 nanometers. The project breaks through ...

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At present, China's Shanghai Microelectronics Technology Company has made a breakthrough in the 22nm lithography machine, and has realized the 22m process.


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Aug 21, 2020 — As early as 2018, Chinese researchers produced a super-resolution lithography machine with a minimum process node of 22 nanometers. As long as ...


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In addition, Shanghai Microelectronics is developing an ArF immersion lithography machine, which can cover 45-22nm. Earlier, Shanghai Microelectronics reported ...
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@ansy1968,
All these reports all referenced the CAS announcement of demonstrating 22nm resolution capability with 363nm litho system. They all incorrectly infer this is one and the same as litho for FE IC application.

I believe even CAS had come out and "admitted" this is not the same application. If I have to guess, this CAS system is more applicable for making high-spatial frequency grating like for photonics application.

So, the info on CAS's demonstration of 22nm resolution is true. All subsequent claim that this could replace any FE IC litho system is just plain wrong.
 

hvpc

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@hvpc and bro from @Oldschool regarding SSA800 28nm DUVL check the overlay accuracy at 2.5nm same with ASML 1980i, 2000i and the latest 2050i, I believed with improved iteration the mythical SSA900 is a possibility.

SMIC Chengdu foundry, using Shanghai microlithography machine SSA800/10W immersion lithography machine Parameters: Lens NA: 1.35 Single exposure resolution: 38-41nm Double workpiece table: DWSi, the productivity is 200 wafers per hour Round overlay accuracy: better than 2.5nm Design index: able to meet the process requirements of 28nm planar planner transistor logic circuit under single exposure conditions​

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• 10 months ago • 10 months ago • Favorites
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SMIC Chengdu foundry, using Shanghai microlithography machine SSA800/10W immersion lithography machine Parameters: Lens NA: 1.35 Single exposure resolution: 38-41nm Double workpiece table: DWSi, the productivity is 200 wafers per hour Round overlay accuracy: better than 2.5nm Design index: able to meet the process requirements of 28nm planar planner transistor logic circuit under single exposure conditions
I’ve seen target UPrecision stage spec on the web before. The 2.5nm referenced here is not the final scanner overlay spec, it’s the stage accuracy spec.

a stage accuracy of 2.5nm is not the same as capability to achieve 2.5nm mixed machine overlay (MMO). I looked up old scanner catalogue, and the litho tool with ~2.5nm stage accuracy have corresponding MMO performance of ~5nm. This would suggest SSA800/10 would be expected to operate closer to Nikon NSR-620D/ASML NXT1950 instead of NSR-630D/NXT1980.

In addition to SMIC not having a fab in Chengdu, also, this news of SSA800 is from 10months ago when U-Precision had indicated their DWSi is still under development……so it doesn’t give me much confidence in the trustworthiness of this article claim.

I can’t and won’t outright dismiss this info but it does make me question and yearn for more supporting evidence.
 

european_guy

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@ansy1968,
All these reports all referenced the CAS announcement of demonstrating 22nm resolution capability with 363nm litho system. They all incorrectly infer this is one and the same as litho for FE IC application.

I believe even CAS had come out and "admitted" this is not the same application. If I have to guess, this CAS system is more applicable for making high-spatial frequency grating like for photonics application.

So, the info on CAS's demonstration of 22nm resolution is true. All subsequent claim that this could replace any FE IC litho system is just plain wrong.

I searched a bit on the net for this. It seems is called super-resolution lithography and is a way to overcome the diffraction limit.

First application was in microscopes

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For lithography I found a paper, but it is too difficult for me to understand

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Anyhow it seems something still at research / lab level, very far from actual implementation in a product. It is also not clear the productivity of such a technique. It seems to be very slow, more similar to e-beam direct writing, than usual litho....but honestly I didn't understand well this stuff.
 

tokenanalyst

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The Institute of Microelectronics, Chinese Academy of Sciences has made important progress in the field of Ga₂O₃ deep ultraviolet image sensors​


Researchers from the Key Laboratory of the Institute of Microelectronics, Chinese Academy of Sciences have realized for the first time a back-illuminated active ultraviolet image sensor array based on the ultra-wide bandgap semiconductor material Ga 2 O 3 , and realized imaging under extremely weak light conditions.

It is reported that ultraviolet imaging has a wide range of uses in military, aerospace, medical and other fields. However, high-performance and low-cost UV imaging chips are still difficult to obtain, and UV detectors based on wide-bandgap semiconductors such as III-V/II-VI are difficult to achieve large-scale integration with Si-based readout circuits, limiting high-performance UV Manufacture and application of imaging chips.

According to the Institute of Microelectronics, Chinese Academy of Sciences, this work provides new ideas and solutions for the integration and application of scalable, high-density image sensors based on materials such as III-V/II-VI. Articles based on this achievement were selected for the 2022 VLSI.

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escobar

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Doubt it, Fat Mike (Pompeo) in the Trump administration tried to ban both DUVi and EUV but the Dutch goverment opposed to the idea and give the Americans the EUV ban as was establish in the Wassenaar Agreement, so unless there is a shooting war in the Taiwan strait (wont matter anyways because that event will be disruptive as f*ck) or China openly decide to support Russia military with hardware, I don't think they will get it this time.​
The Commerce Department, which oversees export policy, is actively discussing the possibility of banning exports of chipmaking tools to those Chinese factories that make advanced semiconductors at the 14 nanometer node and smaller, the people said, to stymie China's efforts at making more state-of-the-art chips. In the meantime, the agency would allow those same tools to be sent to plants owned by the same firms but which make less advanced semiconductors, to safeguard the supply of commodity chips as the world recovers from a chip shortage.
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