Chinese semiconductor industry

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tokenanalyst

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Chinese Academy of Sciences Shanghai Advanced Research Institute recruits talents to develop advanced integrated circuits with nodes below 7 nanometers​


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According to the news of Micronet, the Shanghai Institutes for Advanced Study of the Chinese Academy of Sciences recently released a post-doctoral researcher recruitment notice. After entering the station, the candidates will participate in the synchrotron radiation characterization and application research of Sub-7nm advanced integrated circuit devices.

According to public information, "Synchronous Radiation Characterization Technology and Application for Sub-7nm Advanced Process Node Integrated Circuit Core Devices" is a 2021 project of the national key research and development plan "Frontier Research of Large Scientific Devices", led by Shanghai Advanced Research Institute, and the project is implemented. With a cycle of 5 years, this job posting may show that the R&D project has been substantially started.

According to information from Nankai University, Luo Feng, a chair professor of the school, has also undertaken corresponding topics and carried out photoresist synthesis and etching evaluation of extreme ultraviolet lithography technology. The company's partners include SMIC's Northern Integrated Circuit Innovation Center and Beijing Superstring Memory Research Institute.

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Take note that this project is more about synchrotron radiation for EUV lithography while the SSMB project of Tsignhua is more about producing a more coherent (laser like) EUV light source, similar but different. SSMB is more challenging.
 

ansy1968

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The policy is a failure even for the narrow objectives they've defined. Advances in AI, etc. are much more driven by architectures (both hardware and software) and algorithms, not feature sizes. China is able to both produce 14nm/7nm indigenously (with ASML equipment for now and SMEE equipment shortly) and import more advanced chips. Servers are built with readily available commodity chips, and even banned companies can easily set up shells and source them.

Medium term (3 to 5 years) China will have completely indigenized a cutting edge semiconductor design and manufacturing chain centered around domestic EUV lithography.
@ZeEa5KPul So he is the one who recommend the ASML restriction and I may say he would not blame himself IF China become self sufficient, He had a ready excuse , blame Trump...lol Smart people are egoistic, they think they're smarter than other people until they meet and compete with a Chinese....lol
 

ZeEa5KPul

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Take note that this project is more about synchrotron radiation for EUV lithography while the SSMB project of Tsignhua is more about producing a more coherent (laser like) EUV light source, similar but different. SSMB is more challenging.
I wouldn't put it in quite that way. The CAS-SARI project is more about developing the technologies surrounding EUV lithography like optics, masks, etc. while the Tsinghua project is about developing the light source itself.
 

ansy1968

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I asked @latenlazy a few days ago about this area too. It would be interesting to see if ASML find ways to sell the current generation EUV machines to China if SMEE can ramp up DUV production level high enough that ASML starts to loose the Chinese market. If we believe that SMEE's DUV will over the next 3 or 4 years ramp up production and also improve enough to be able to be used in lower nodes, then ASML is really going to see major declines in its China revenue.
@tphuang Sir ASML may find it difficult with the current geopolitical climate until China produce its owned EUVL so why not buy a Chinese subsidiary and produce or assemble its DUVL locally in China, even not the most advance like NXT 2050i, a NXT 2000i will do as it is a proven machine unlike that of SMEE SSA800. It's a perfect advert killing two birds with one stone and a good business decision BUT it won't cause they see the Chinese incapable of producing such complex machine. So the Hubris is their downfall.
 

tokenanalyst

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I wouldn't put it in quite that way. The CAS-SARI project is more about developing the technologies surrounding EUV lithography like optics, masks, etc. while the Tsinghua project is about developing the light source itself.
The group in Nankai university developing this project is doing a lot. They already have companies around this subject.

The research directions of Dr. Luo Feng's research group (analog IC design, micro-nano processing and ultra-precision manufacturing team), chair professor of Nankai University, include analog IC design (power chip), reliability of process and device integration, and failure analysis; extreme ultraviolet light Photoresist synthesis and evaluation for lithography, mirror polishing, mask making and defect detection, based on large scientific devices such as synchrotron radiation and free electron lasers (miniaturization and specialized integration of synchrotron radiation devices) extreme ultraviolet lithography (exposure/detection ); manufacturing process, device integration, micro-nano processing/ultra-precision manufacturing equipment for spintronics/quantum sensing wafer-level devices.

1 ) Low-power high-end power management chip / vehicle-grade / aerospace-grade ultra-low quiescent current high-end intelligent power management chip; focus on the failure analysis technology of integrated circuit reliability design test for electrostatic discharge ESD ;

2 ) EUV photoresist synthesis manufacturing and etching evaluation; chemical / physical deposition preparation of EUV photoresist below 5nm process node and its verification on storage/GAA logic chip technology; EUV lithography mask Design and manufacturing, EUV lithography mask inspection ; ion beam mirror polishing process and equipment related to synchrotron radiation EUV; [Materials / Electro-Optics College Admissions]

3 ) New materials / devices for ultra-low power spin chips / spintronics ; new methodologies for wafer-level micro/nano fabrication and fabrication / micro/nano hybrid fabrication process development; 4D based on magnetoelectric / magneto-optical devices In situ characterization method of electron microscope and synchrotron radiation source; XCT non- destructive testing and defect detection of sub-20nm chip based on synchrotron radiation source ; [Materials/College of Electro-Optics Admissions]

4
) 8/12-inch nano- imprint lithography key photoresist materials, overlay imprinting process technology and specialized equipment; 6/8/12 - inch ion beam deposition / polishing / etching key processes and specialized equipment; [Nankai University Materials / Electro-optics College Admissions]

1. The Ministry of Science and Technology's key research and development project "Synchronous Radiation Characterization Technology and Application for Sub-7nm Advanced Process Node Integrated Circuit Core Devices", 2022-2026, 5.2 million/18.5 million (company partner: Northern Integrated Circuit Innovation Center, Beijing Chaoyang Technology Co., Ltd. Spin Research Institute, Sembcorp Nano), project leader.

2. The Ministry of Science and Technology's key research and development project "Bio-Nanopore Gene Sequencer", 2022-2024, 2 million/40 million (20 million company matching), signal amplification and circuit system integration, project participation.

3. The Fund Committee's major project "Structure-efficiency regulation of unconventional excitation dyes and scientific basis for product engineering", 2021-2024, 1 million, EUV photoresist synthesis and performance evaluation, project participation.

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tokenanalyst

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part 2:

The semiconductor chip material and device processing team of Nankai University has many sets of advanced equipment such as pulsed laser deposition, atomic layer deposition and magnetron sputtering in the material growth direction, BTU high temperature oxidation diffusion furnace, various PECVD, LPCVD and other thin film equipment and rapid thermal desorption. Furnace equipment ( RTA ), with multiple wafer-level equipment in lithography (laser direct writing / nanoimprinting / electron beam exposure / extreme ultraviolet lithography), etching ( RIE/IB ) and other directions, can complete the complete process R & D tape test work. Key technologies include the research and development process of EUV lithography dry photoresist, nano-imprint patterning platform, GAA etching equipment, atomic layer deposition and etching ALD/ALE processing platform, atomic force microscope, atomic force microscope, Focused ion beam microscope, XPS , comprehensive physical property measurement system, and 4D transmission / scanning electron microscope, etc., and based on the in-situ characterization platform of synchrotron radiation integrated circuit components, the Shanghai Light Source / Nankai University Joint Laboratory was established. The center's IC failure analysis laboratory has reserved IC reliability testing capabilities, including ESD testing ( HBM/CDM ), LU testing, EOSTesting, surge testing, TLP testing, electromagnetic compatibility testing, environmental testing, etc.; can provide reliability analysis services such as electrical fault analysis, material composition analysis, section structure analysis, circuit cutting, circuit repair, and competitive product design analysis. Successfully solved the ESD reliability problems of large-scale SOC products, multi-power domain multi-pin products, RF high-frequency products, high-voltage products and finfet products . Processes involved: including traditional CMOS , BCD , SOI processes, and the current cutting-edge 3D FINFET process (not yet mature in China). And has long-term stable and in-depth cooperative relations with many companies and scientific research units, including Jiangsu Leuven Instruments, the pilot process research and development platform of the Institute of Microelectronics of the Chinese Academy of Sciences, etc., which are used for independent research and development of large-scale equipment. At present, a research team in the direction of analog chip design (RF chip, power management chip and digital-to-analog signal converter), chip reliability test and failure analysis has been formed in the School of Electro-Optics. The team of the School of Materials focuses on strengthening close ties with the semiconductor industry in the direction of extreme ultraviolet lithography. Through cooperation with photoresist companies Tongcheng Microelectronics and Beijing Kehua, chip design and manufacturing companies Huawei HiSilicon, Changxin Storage, SMIC, Belgium IMEC , semiconductor equipment companies Leuven Instruments, Tenren Micro-Nano, Jizhixin Technology, etc. work closely together, combining with public scientific research platforms such as Swiss Light Source, American APS Light Source, Shanghai Light Source and other public scientific research platforms, focusing on sub-7nm process node semiconductors Key materials, processes and equipment directions for advanced manufacturing processes.
 

supersnoop

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@tphuang Sir ASML may find it difficult with the current geopolitical climate until China produce its owned EUVL so why not buy a Chinese subsidiary and produce or assemble its DUVL locally in China, even not the most advance like NXT 2050i, a NXT 2000i will do as it is a proven machine unlike that of SMEE SSA800. It's a perfect advert killing two birds with one stone and a good business decision BUT it won't cause they see the Chinese incapable of producing such complex machine. So the Hubris is their downfall.
US already signaled they will likely kill any DUV export like that at any time
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Now, it seems the US might push for expanding the restrictions to DUV immersion equipment.

The CEO actually says he does not believe China can be stopped, "The laws of Physics here are the same as China..."
But his hands are tied.

Most businesspeople aren't stupid. There was a South African company MLS that was designing MRAP vehicles and sold a license to NORINCO. When the CEO was asked if he was concerned about IP Theft or giving a the competition a leg up, he responded by saying, he can either take the money and compete with Chinese companies in the future, or have no money and still compete with Chinese companies in the future. (paraphrased)
 

FairAndUnbiased

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That is for Finfets? I think for planar transistors regardless is a p-type or n-type wafer, you still have to implant ions with the help of an oxide mask to make the structure of the transistors, the drains and sources.
Thanks. This means that domestic ion implanters are even more important than I thought. They used to be monopolized by US.
 
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