Chinese semiconductor industry
- Thread starter Hendrik_2000
- Start date
- Status
CETC does implanters: high energy, medium energy and medium current
Medium beam ion implanter:
Medium beam current, dose 2E11-1E16 ions/cm2
200mm/300mm, electrostatic chuck, single chip injection
Single charge 1kev-300kev, maximum triple charge 900kev
Parallel beam, horizontal and vertical 2D angle detection and correction
Special ion implanter:
Multi-element implantation: B+, P+, H+, He+, Ar+, O+, Ni+, Zr+, Mo+, Fe+, etc.;
Batch loading, single wafer injection, substrate size 3-6"
Single charge 1KeV-300KeV;
Low temperature target (liquid nitrogen cooling), normal temperature target and high temperature target (600℃) are optional.
Large beam ion implanter:
High beam current, dose 2 E 12 - 2 E 17 ions/cm2
300mm, electrostatic chuck, monolithic injection
Single charge 200ev-50KeV
200ev, B+ beam current greater than 2mA
Broadband beam, horizontal angle detection and correction
High energy ion implanter:
300mm, electrostatic chuck, single-chip injection;
Single charge 10KeV-1500KeV;
Parallel beam, horizontal angle detection and correction;
Maximum productivity, 250 pieces/hour;
Injection uniformity and repeatability can reach 0.5%.
Kingstone/Wanye enterprise: High current more precise ion implanters.
My wild guess: is that looks like a group making equipment specifically for this kind of memory production, looks like it was created in 2020, something they want but cannot by find in the open market (for obvious reasons). Probably working with CETC who act as a semipermeable barrier between the Civil and military sector by making research made by the military available to the Civil/commercial sector.
Han's Fuchuang Technology's high-end semiconductor equipment and Huxi Optoelectronics silicon photonics semiconductor special equipment manufacturing project signed a contract in Pinghu, Zhejiang
Jiwei.com news, on May 28, the signing ceremony of the high-quality manufacturing project in Pinghu City was held. The high-end semiconductor equipment project of Shanghai Han's Fortune Technology Co., Ltd. and the silicon photonics semiconductor special equipment manufacturing project of Huxi Optoelectronics Technology (Zhejiang) Co., Ltd. were signed.
According to news released by Pinghu , the high-end semiconductor equipment project of Shanghai Han’s Fuchuang Technology Co., Ltd. has a total investment of 2 billion yuan. It is mainly engaged in the research and development, production, testing and sales of robots and automation equipment in the semiconductor field.
According to the company's official website, Shanghai Han's Fuchuang Technology Co., Ltd. is a holding subsidiary of Shenzhen Han's Laser Technology Industry Group Co., Ltd. Customized overall solution for hood conveying automation system and semiconductor automation transmission system.
Huxi Optoelectronics Technology (Zhejiang) Co., Ltd. has a long-term planning investment of 500 million yuan for the silicon photonics semiconductor special equipment manufacturing project. The first phase of the project leases an area of 5,300 square meters, which is used for the research and development and production of automation equipment in the field of laser semiconductors and new energy. , testing and sales, the project is expected to have an annual output value of 1 billion yuan and an annual tax of 100 million yuan.
No. CETC makes for both naval and aerial radars. This is especially true of CETC subsidiary NRIET who is responsible from anything like J-10 to 052D.
AVIC PITCHES AIR-COOLED AESA RADAR FOR JF-17
The Aviation Industry Corporation of China (AVIC) 607 research institute announced that it successfully completed the development of an air-cooled active electronically-scanned array (AESA) radar, which AVIC will pitch for the Pakistan Air Force’s (PAF) JF-17 Block-III as part of the fighter’s AESA fighter requirement.
The 607 institute, officially known as the China Leihua Electronic Technology Research Institute (LETRI), announced the news through WeChat. LETRI is also the developer of the SD-10 beyond visual-range active radar-homing air-to-air missile in service with the PAF.
As per LETRI, its air-cooled AESA radar is a first of its kind. LETRI believes that its AESA radar will help offset the internal space and power limitations of many in-service fighters, providing these aircraft with an AESA radar that is easier to integrate than liquid-cooled systems, such as the KLJ-7A offered by the Nanjing Research Institute of Electronics Technology (NRIET).
AVIC is the one providing AESA radars to the JF-17 project.
The introduction of domestic etching equipment has been accelerated, and the etching equipment of North Huachuang (Naura) and China Micro (AMEC) has entered the mainstream project production line
In recent years, the value of relatively mature domestic equipment in the local wafer production line has increased. At present, in the semiconductor industry in mainland China, etching equipment has entered a mature stage, and the market space is constantly expanding. Domestic etching equipment has made continuous breakthroughs in technology. The leaders of etching equipment, North Huachuang and Zhongwei, have made breakthroughs in their respective subdivisions and entered more production lines.
Jiwei.com compiled statistics based on the bidding platform data. In April 2022, the number of etching equipment in mainland China was 36, and the number of domestic equipment manufacturers was 26, including 14 from North Huachuang and 12 from China Micro.
The advantages of NAURA are in the fields of silicon etching and metal etching, while China Micro is stronger in dielectric etching. It is not difficult to see from the above-mentioned data of winning bids in April.
It is understood that NAURA’s 12-inch ICP (Inductively Coupled Plasma) etching machine is also playing an important role in 14/7nm SADP/SAQP, advanced memory, 3DTSV and other process applications while realizing the localized replacement of 28nm for clients. important role. On November 21, 2019, NAURA's ICP etching equipment helped Shanghai ICRD achieve a major breakthrough in the research and development of its own 14-nanometer SADP process.
With its obvious advantages in the field of ICP etching, the 14nm plasma silicon etching machine independently developed by NAURA has successfully entered the production line of mainstream projects. According to the incomplete statistics of Jiwei.com, in April, North Huachuang metal plasma etching machine, polysilicon etching machine and other equipment have entered the construction project of Shanghai Jita characteristic process production line. According to public information, the total investment of Jita Semiconductor's special process production line project is 35.9 billion yuan. The goal is to build an 8-inch production line with a monthly production capacity of 60,000 pieces and a 50,000-piece 12-inch special process production line. In addition, Zhuzhou CRRC Times Semiconductor Co., Ltd. purchased a metal etching machine; the high-density metal etching machine was purchased by Peking University.
Another domestic semiconductor equipment leader, China Micro Corporation, has obvious advantages in CCP (capacitively coupled plasma) etching technology, and multiple CCP etching equipment has entered Hua Hong Wuxi's 12-inch process production line. According to public information, the Hua Hong Wuxi project has a total investment of over US$10 billion. The first phase of the project plans to invest about 2.5 billion US dollars to build a 12-inch (300mm) characteristic integrated circuit production line with a monthly production capacity of 40,000 pieces, covering 90~65/55 nanometer process nodes.
According to China Micro's 2021 annual report, the company's CCP etching equipment products maintain a competitive advantage. In 2021, a total of 298 chambers of CCP etching equipment will be produced and shipped, and the output will increase by 40% year-on-year. Primo AD-RIE, Primo SSC ADRIE, Primo HD-RIE and other products are applied in batches to the integrated circuit processing and manufacturing production lines of first-line customers at home and abroad, and continue to increase market share.
The CCP etching equipment such as Primo AD-RIE, which is independently developed by Zhongwei for 12-inch wafer processing, has been introduced into its advanced chip production lines from 65nm to 5nm by internationally renowned customers; Primo AD-RIE200 is in technological innovation and production. Efficiency has been further improved to meet the processing needs of different customers for 8-inch wafers; Primo HD-RIE excels in high aspect ratio trench and deep hole etching in 3D-NAND and DRAM, and in some key processes Mass production has been achieved.
In terms of ICP etching technology, Zhongwei has gradually matured. In 2021, a total of 134 ICP etching equipment will be produced and shipped, and the output will increase by 235% year-on-year. Primo nanova ICP etching products have been verified by more than 100 ICP etching processes on the production lines of more than 15 customers. The etching performance and mass production indicators of some processes have met the requirements of customers and have been put into mass production.
Deep silicon etching equipment Primo TSV200E and Primo TSV300E using ICP technology continue to receive repeated orders in mature etching markets such as advanced system packaging, 2.5-dimensional packaging and MEMS chip production lines, and also in the etching process in emerging markets such as 3D chips. Start getting verified.
This is to be expected, at least in the short term. For example, the major DRAM manufacturers are moving to using EUV now, while Chinese DRAM makers such as CXMT will be stuck at 1x nm or 1y nm level for a while. But it's important for China to stick to the strategic goal of removing bottlenecks and achieve self-sufficiency in key parts of the supply chain, after which China will control its own pace and destiny.
Self sufficiency is the name of the game. DRAM being a commodity only cares about cost effectiveness, so if sufficient cost efficiency is achieved from 1x nm DUV processes then it's not too bad.
The dudes from Tsinghua got a WIPO patent on their SSMB EUV light source.
The present invention relates to a storage ring for storing ultrashort electron beam clusters (eg beam length 100 nm). The present invention also relates to a steady-state microbunching-based extreme ultraviolet (UV) with such a storage ring EUV light source, the extreme ultraviolet light source is used to generate ultra-high power extreme ultraviolet laser, especially suitable for nano chip lithography applications and other fields.
Electron beam storage ring and extreme ultraviolet light source with the electron beam storage ring
Abstract
An electron beam cluster storage ring (100), the electron beam cluster storage ring (100) comprises a plurality of deflection structures (110) and a plurality of linear segments (120) connecting the deflection structures (110), the deflection structures (110) and the linear segments ( 120) together form a ring-shaped structure suitable for the continuous running of the electron beam cluster, and in the running direction of the electron beam, each deflection structure (110) is sequentially arranged with a front end matching section (116), a front end matching unit (118), continuous with each other; A number of main units (112), a rear end matching unit (119) and a rear end matching section (122) are arranged, and the magnets in the electron bunch storage ring (100) are appropriately arranged so that the magnets outside the matching unit (114) The integral values of the dispersion functions in all the diodes (B1, Bm) are zero, and the dispersion functions and their derivatives at the entrance of the front-end matching unit (118) and the exit of the back-end matching unit (119) are zero, In addition, the derivative value of the dispersion function at the junction of the diodes (B1, Bm) of the adjacent main units (112) is zero.Description
Electron beam storage ring and extreme ultraviolet light source with the electron beam storage ring technical fieldThe present invention relates to a storage ring for storing ultrashort electron beam clusters (eg beam length 100 nm). The present invention also relates to a steady-state microbunching-based extreme ultraviolet (UV) with such a storage ring EUV light source, the extreme ultraviolet light source is used to generate ultra-high power extreme ultraviolet laser, especially suitable for nano chip lithography applications and other fields.
- Status