Since 1990s, CIOMP has been focused on the research of EUV/X-ray imaging technology, especially in EUV light source, ultra-smooth surface polishing technology, EUV multilayer and correlation technology. And those aforesaid techniques form the applicative foundation of EUV optics. In 2002, the first EUV lithography prototype in China was developed, which verified the EUV lithography in principle. In 2008, EUV lithography technology was listed as a key research task in "32-22nm equipment technology forward-looking research" by the major project. CIOMP carried out the project of “The research on the key technologies of extreme ultraviolet lithography” as a leading organization, together with partners such as CAS Institute of Optics and Electronics, CAS Shanghai Institute of Optics and Fine Mechanics, CAS Institute Microelectronics, Beijing Institute of Technology, Harbin Institute of Technology, Huazhong University of Science and Technology.
The research team insisted the scientific spirit of perseverance, concentrates on the research, and accumulates propound knowledge. With eight years’ hard work, they have mastered a series of core technologies that limit the development of Chinese EUV lithography, such as ultrahigh accuracy aspheric mirror fabrication and testing, EUV multilayer, projection system integration and test, etc. A two-mirror EUVL objective system with the wave-front aberration better than 0.75 nm RMS was developed successfully, and a EUV lithography exposure apparatus was constructed. Using the apparatus, they achieved the first photoresist exposure pattern with 32 nm linewidth by EUV lithographe core technologies of Chinese EUV lithography. At the same time, the implementation of the project hy in China. They established a relatively perfect research and development platform for key technology of exposure optical system, complete successfully the research contents and tasks of national major project, achieve leapfrog development in EUV optical imaging technology, and enhance significantly contributed the establishment of a stable research team, and trained talents for our country to achieve sustainable development in the next generation lithography technology.
The idea of companies like CTEC using an "EUV machine" for low-volume patterning of advanced chips for the Chinese military is not as crazy as some might think. Even a machine that only produces 10-20 WPH is much faster than what an ebeam lithography machine can produce. It's not even close to a machine that can be used in commercial production and probably super expensive. But much more productive than e-beam lithography.
The research team insisted the scientific spirit of perseverance, concentrates on the research, and accumulates propound knowledge. With eight years’ hard work, they have mastered a series of core technologies that limit the development of Chinese EUV lithography, such as ultrahigh accuracy aspheric mirror fabrication and testing, EUV multilayer, projection system integration and test, etc. A two-mirror EUVL objective system with the wave-front aberration better than 0.75 nm RMS was developed successfully, and a EUV lithography exposure apparatus was constructed. Using the apparatus, they achieved the first photoresist exposure pattern with 32 nm linewidth by EUV lithographe core technologies of Chinese EUV lithography. At the same time, the implementation of the project hy in China. They established a relatively perfect research and development platform for key technology of exposure optical system, complete successfully the research contents and tasks of national major project, achieve leapfrog development in EUV optical imaging technology, and enhance significantly contributed the establishment of a stable research team, and trained talents for our country to achieve sustainable development in the next generation lithography technology.
The idea of companies like CTEC using an "EUV machine" for low-volume patterning of advanced chips for the Chinese military is not as crazy as some might think. Even a machine that only produces 10-20 WPH is much faster than what an ebeam lithography machine can produce. It's not even close to a machine that can be used in commercial production and probably super expensive. But much more productive than e-beam lithography.