@tokenanalyst But bro using SSMB it might able to match or even surpass ASML High NA EUV?
Chinese semiconductor industry
- Thread starter Hendrik_2000
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The Numerical Aperture which the means better resolution depends on the optics not the light source if I am not mistaken.
China does not need EUV if it can improve the DUV because most demand can be met with an improved duv.
however, china needs euv to destroy the profit margin of TSMC. I was just looking up Xiujie Deng and C Tang on google scholar and it seems that they have not published any work since the experimental work done in Germany. it is not clear if they can perform experiment it in China because they need to use the synchrotron in Germany (alpha mode?). maybe China has decided to build the SSMB ring after in 1999 and decided to keep it low profile?
No, I can't, true. But I also can't find a source for 55 nm being the logic circuit process.So you can tell the difference between 180nm and 55nm in the logic chip image you shared?
I also don't find it absolutely unbelievable that the logic circuit is 180 nm since there are I/O ASICs at that process or similar processes using protocols like Ethernet and PCIe that communicate in GB/s so why can't an intrachip connection have similar speeds?
And if you have separate wafers and processes for the logic wafer vs memory array, why wouldn't you use the cheapest process possible for the logic wafer portion since that doesn't drive your profits as long as it does the job?
@hvpc and here bro why I hold @WTAN @Oldschool and @foofy in such high esteem, IF you follow A-SET link, his prediction all come true, with prototype of SSA800 produced in 2020 and delivered in 2021 as part of 02 Special Project. It's my big lesson to China IC and I'm extremely grateful to them, now with the inclusion of @tokenanalyst @krautmeister @FairAndUnbiased and you, I may pass my engineering degree with honor just reading your post....lol
@pbd456 bro IF the Beijing HEPS is finished it will be the fourth, so China presently had the tools to research EUV and CAS (China Academy of Science) is involved so the chances of success is high. With the urgency China is not resting on its laurels and we're up for a surprise as China always do, like PLA watching the hint is strong on this one, especially as Liu He was given a task by the Supremo itself XJP. Regarding SSA900 22nm DUVL, I'm waiting from @WTAN , @Oldschool and @foofy for confirmation and are searching the Chinese publication about this improve variant, because it is within SMEE and China ability to produce one.
it is not clear if HEPS is intended to be used this way. Without the ring, it cant really test to how to run ssmb reliability.
building an EUV is relatively easy if it only processes a few wafer per hour, and need maintenance every few hours. A competitive EUV took ASML many years.
It is worthwhile mastering the technological capability of producing IC chips using EUV or other means to get present state of the art IC chips and future state of the art ones, and having such mastery without relying on imported machinery and even components for such machinery. Whether China uses particle accelerators, laser producing plasma machines similar to those currently used by ASML or otherwise, China needs to have the technological capability of producing such machines without reliance on any foreign source for any component incorporated into such machines.
@pbd456 bro from @Oldschool and your concern regarding the gun had been successfully develop and installed. From the link below :
The first scientific research equipment of the high-energy synchrotron radiation source of the large scientific installation - the electron gun was successfully installed
2021-06-30 14:14 Source: Science and Technology Daily[ ] [Font size large, medium and small ] [ Print this manuscript ]
On June 28, the installation of the electron gun, the first scientific research equipment of the high-energy synchrotron radiation source (HEPS), a major national science and technology infrastructure, was successfully completed, marking the official entry of the HEPS project construction into the equipment installation stage; at the same time, it provided technical research and development and testing support capabilities for HEPS. The advanced light source technology research and development and testing platform (PAPS) also started trial operation.
HEPS is an indispensable means of strategic high-tech research such as cutting-edge basic science and engineering materials. It is an extremely bright large "microscope".
As the first installed scientific research equipment, the electron gun is located at the end of the HEPS linear accelerator, which is the source of accelerated electrons. It consists of four major components: the gun body, the ceramic barrel, the anti-halo ring, and the negative grid assembly. The negative grid component is the key to the electron gun. part.
"The Institute of High Energy of the Chinese Academy of Sciences has laid out ahead of schedule. Through years of technical research, it has overcome many difficulties and solved the problems of cathode emission and micron grid preparation, deformation and welding. At present, the localization of cathode grid components has basically been realized." Academician of the Chinese Academy of Sciences, Chinese Academy of Sciences Wang Yifang, director of the Institute of High Energy, said.
The HEPS project started construction on June 29, 2019, with a construction period of 6.5 years. When completed, HEPS will become China's first high-energy synchrotron radiation source and one of the fourth-generation synchrotron radiation sources with the highest brightness in the world, providing an important support platform for original, breakthrough and innovative research in the fields of basic science and engineering science.
The brightness of HEPS is two orders of magnitude (hundred times) higher than that of the third-generation light source, and "the internal structure of the material can be understood more clearly, which plays an important role in the development of materials science and life science." Wang Yifang said.
As of the end of June 2021, about 70% of the total construction and installation project of HEPS has been completed. The prototype trial production of magnets, power supplies and other equipment has been completed, and the batch processing stage has been entered. Phased progress has been made in the development of beam position measurement electronics and pixel array detectors. It is expected that in early 2022, all building units will be delivered for use, and HEPS will be fully transferred to the equipment installation stage.
On the same day, the PAPS project, which provides technical R&D and testing support capabilities for HEPS, also started trial operation. The superconducting high frequency and low temperature, precision magnet measurement, X-ray optical inspection and other equipment of PAPS were put into operation.
This project is the first batch of cross-research platform projects in Beijing that passed the process acceptance and transferred to trial operation. It not only provided better support for HEPS construction testing and technology research and development, but also played a good role in the subsequent acceptance of other platforms. The leading role of Huairou National Science Center marks that in the first year of the "14th Five-Year Plan", the Huairou Comprehensive National Science Center has shifted from construction to a critical stage where both construction and operation are emphasized.
The PAPS project is the first batch of cross-research platform projects in Beijing. It is supported by the Beijing Municipal Development and Reform Commission. The project is located opposite the HEPS installation and started construction in May 2017. The construction period is 4 years.
"The project innovatively adopts the 'double main body' construction model of the Institute of High Energy Physics of the Chinese Academy of Sciences and Huairou Science City Company to carry out forward-looking and systematic research to solve the superconducting high frequency and low temperature, precision magnet measurement, detection and detection required for HEPS construction. A series of key technologies such as device technology research and development testing, X-ray optical detection, etc., provide strong technical support for the construction, operation and subsequent development of advanced light sources." said Pan Weimin, PAPS project manager and researcher at the Institute of High Energy, Chinese Academy of Sciences.
Pan Weimin said that the PAPS project has achieved a number of achievements, especially in the development of 1.3GHz 9-cell superconducting cavity, which has reached the international leading level. The project passed the process test and acceptance on June 18, 2021. After on-site testing and acceptance by relevant competent departments and experts from the institute, the process performance indicators of each system of the project were all met, and some were better than the acceptance indicators, and the construction goals of the project were achieved with high quality. .
Some developement with China EUV. The optic system in EUV is using reflective mirror made of multilayers of Mo and Si with layer width in the range of 2nm.
There's news that kyvac capable of coating in the range of 0.1nm.
央视正式宣布：EUV技术大获突破！0.1nm设备已投入使用,在美国的限制下，ASML没办法向中国提供高端的EUV光刻机，但我国也不是会轻言放弃的。就在最近，央视正式发布消息，我国不仅在EUV光刻机上取得突破，还将光源0.1nm的设备投入使用。美国阻止ASML……
并且中科科美研究的透镜镀膜技术，完成了光学零件0.1nm的镀膜设备。这项技术，满足了大部分物理镜头对膜层制造的需求，同时还能用于光刻机的镜头装备中，
北京中科科美科技股份有限公司：超高温真空炉、真空镀膜系统、高真空排气台、真空钎焊炉、陀螺惯导、氦检漏、离子泵、镀膜机、钎焊炉、插板阀、检漏仪、真空镀膜机、真空炉。中科科美是专门从事真空系统集成产品设计、制造、销售和服务的国家高新技术企业，为客户提供真空系统整体解决方案和一站式服务，包括真空集成系统的总体设计、工程实施、设备安装、技术服务等。公司主营业务分为空间环境模拟装置、充气回收检漏系统、新能源真空应用系统和大科学工程真空配套四大类别。
再加上中科院正在安装的光源设备，让我国芯片行业取得了巨大成就。据统计，到6月底，中科院的安装项目已经完成了70%。
Seems like the EUV light source is not based on LPP or DPP but based on synchrotron ,
高能同步辐射光源 you can check with WTAN ,
0.1nm！国产芯片关键设备投用，可用于EUV光刻机光镜头
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Hey @FairAndUnbiased bro,
I hope you know I was just messing with you.
Those in my field needs to know minimum feature size on our customer's chip for trouble shooting purpose or for product positioning, business development. This is true for litho, etch, metrology, inspection guys. I can't share the specifics, but I can tell you the logic portion of that chip, a few layers have resolution that require ArF scanner.
I'm sure if you search hard enough you could find the array and logic minimum resolution for 3D-NAND. I'll look, will share with you if I find something. For DRAM & 3D-NAND, I recall the logic periphery resolution requirement is usually equivalent to just one or two nodes behind the memory array.
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