If the rumors are to be believed SMEE, which sources it equipment exclusively from SOEs and private Chinese companies, already has a certified 28nm machine. I believe China is not far off from having a fully indigenous 28nm node.
Last edited:
Chinese semiconductor industry
- Thread starter Hendrik_2000
- Start date
- Status
From what I understood from like reading this thread, the 28nm DUV by SMEE should also be able to make stuff like 14nm chips and possibly also 10nm (not sure about 7nm)If the rumors are to be believed SMEE, which sources it equipment exclusively from SOEs and private Chinese companies, already has a certified 28nm machine. I believe China is not far off from having a fully indigenous 28nm node.
Huawei has more options than you have alts, tidalwave.
Lol what are your taking about? Satellite images of foundry? I sure there are lots of satellite images of large flat buildings in China.
I read through the entire thread from the beginning and I am very confused what had been ruled out as false and what are the current consensus on the agreed upon latest fact/insights.
could someone list the latest accepted info (that had not been ruled out)? And maintain this list and update regularly (like on monthly basis) so we are all in-sync? Thanks.
I bit of correction is that the optical system is being developed by the E-Town backed company Guowang OpticalIf the rumors are to be believed SMEE, which sources it equipment exclusively from SOEs and private Chinese companies, already has a certified 28nm machine. I believe China is not far off from having a fully indigenous 28nm node.
Are you talking about me, calling me sleepy loser?
It was a trollish guy that use to lurk here, who likes to engage in unproductive fights with people here.
Last edited:
E-Town backed Rslaser patent for high performance excimer lasers for smaller process nodes.
High-stability excimer laser device
CN113659417A- 2021
Beijing Rslaser Opto Electronics Technology Co ltdAbstract
A high stability excimer laser apparatus comprising: the device comprises a discharge resonant cavity, a line width narrowing module, a detection module and a control module; the line width narrowing module comprises a beam expanding device and a echelle grating which are sequentially arranged along the laser emitting direction of the first side of the discharge resonant cavity; the detection module comprises a central wavelength accurate measurement device and a central wavelength rough measurement device; the device for roughly measuring the central wavelength comprises a reflecting device, a light beam converging device and a first photoelectric detection device, and is used for roughly measuring the central wavelength;the central wavelength precision measurement device is arranged on a second side opposite to the first side of the discharge resonant cavity and used for receiving the laser beam emitted from the second side and carrying out central wavelength precision measurement; the control module is respectively connected with the discharge resonant cavity, the central wavelength accurate measurement device and the central wavelength rough measurement device and is used for adjusting parameters in the discharge resonant cavity according to the measurement results of the central wavelength accurate measurement device and the central wavelength rough measurement device.the control module is respectively connected with the discharge resonant cavity, the central wavelength accurate measurement device and the central wavelength rough measurement device and is used for adjusting parameters in the discharge resonant cavity according to the measurement results of the central wavelength accurate measurement device and the central wavelength rough measurement device.the control module is respectively connected with the discharge resonant cavity, the central wavelength accurate measurement device and the central wavelength rough measurement device and is used for adjusting parameters in the discharge resonant cavity according to the measurement results of the central wavelength accurate measurement device and the central wavelength rough measurement device.
Technical Field
The application relates to the field of lasers, in particular to a high-stability excimer laser device.
Background
Laser output by the excimer laser has the characteristics of short wavelength, narrow line width and high energy, and is widely applied to the field of semiconductor chip processing, such as: the laser light output by the excimer laser is the most common light source in the field of lithography machines.
With the continuous development of chip processing technology, the size requirement of the chip reaches 28nm, 14nm or even smaller. Therefore, the demand for excimer lasers for processing chips is also increasing. Not only is the laser required to be capable of releasing higher energy and have a narrower spectrum, but also the laser is required to have a central wavelength with higher stability in the working process. The on-line measurement of the energy and the central wavelength of the alignment molecule laser, the closed-loop device of the central wavelength and the energy and the closed-loop feedback control provide higher requirements.
- Status