Chinese semiconductor industry
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Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility
ZHAO Jun1,2, YANG Shu-Min2, XUE Chao-Fan2, WU Yan-Qing2*, CHEN Yi-Fang1, TAI Ren-Zhong2
Abstract: As the next generation of lithography technology, extreme ultraviolet lithography has been given the mission of saving Moore′s law by the industry. Extreme ultraviolet photoresist is one of the core sub-technologies of extreme ultraviolet lithography. The inspection of its resolution, roughness, sensitivity and outgassing conditions is a necessary condition for the development of extreme ultraviolet photoresist and it is also an important part to optimize the resist performance. Extreme ultraviolet interference lithography based on synchrotron radiation is currently the most suitable method for testing the performance of extreme ultraviolet photoresist. According to related research and development needs, an extreme ultraviolet photoresist inspection platform based on this method has been established in Shanghai Synchrotron Radiation Facility(SSRF). By continuously improving the stability of the device, developing independent beam splitting grating mask manufacturing technology, and constantly exploring and optimizing the corresponding interference exposure process, the current inspection resolution has reached below 20 nm, which basically meets the corresponding requirements for the 7 nm process node of extreme ultraviolet lithography.
This is what @WTAN was talking about.
2021 research in LPP
Study on the Radiation Characteristics of Ultraviolet Light in Laser Plasma of Structural Tin Target
Characteristics of Extreme Ultraviolet Emission from Laser-Produced Plasma on Structured Sn TargetThe research on the radiation characteristics of the laser plasma of the structured Sn target was carried out, and the extreme ultraviolet spectrum produced by the pulsed laser plasma with a wavelength of 1064 nm was studied. The experimental results show that when the laser energy is 500 mJ, the depth of the structural target groove is 100 μm and the width is 300 μm, the enhancement rate of the integrated intensity of the optical radiation in the 13.5 nm (2% bandwidth) band of the structural target groove is about the plane. 1.57 times the target. At the same time, it is found that the grooves have an inhibitory effect on the expansion of the laser plasma, resulting in different laser energy corresponding to the optimal enhancement magnification for different groove widths. The effect of focused spot size on the generation of EUV radiation from structured targets was investigated. The experimental results show that when the diameter of the focused spot is close to the width of the groove, the enhancement ratio of the integrated intensity of the optical radiation in the 13.5 nm (2% bandwidth) band of the groove is the highest. This research is of great significance for improving the radiation intensity and conversion efficiency of EUV light.
Probably, I also posted the other day that they already researching EUV photoresist with a SSMB light source.
@tokenanalyst Bro the reason why Mr Liang Mong Song is still in SMIC is because he had the Shanghai Synchrotron facility to use for his research.
and from my previous post when he announced the completion of 7nm projected and the Eight CORE tech on 5nm and 3nm, I can surmised when SMEE EUVL is introduced in 2025 powered by SSBM or in late 2023 or early 2024 using a LPP, both the 5nm and 3nm is production ready as the development is done using the Shanghai Synchrotron and the materials needed (you posted above) as well. So it's optimistic to say IF all my projection come true we may see within 3 years the gap between the perennial leader and that of the underdog vanished.
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