"Do not press a desperate foe too hard" -SunTzu.The insanely large scale of the Chinese semiconductor ecosystem is beginning to overwhelm the West with innovations.
Last week I sent an article I wrote in Seeking Alpha on ASML and China, and promised a new article this week. See it attached as it was published today. It's entitledThe insanely large scale of the Chinese semiconductor ecosystem is beginning to overwhelm the West with innovations.
@tinrobert Sir I really love this part (in bold), please let us know and share with us news from your sources, we're tracking it in China publication and rumor mills and it seems that this Loch Ness monster do exist.Last week I sent an article I wrote in Seeking Alpha on ASML and China, and promised a new article this week. See it attached as it was published today. It's entitled
ASML's Current Battleground Now In China On Several Fronts
I welcome comments, which will help in future articles, as I am in the US and most readers are closer to what's going on in China.
I'd assume that particle accelerators such as sychrontrons are easily capable of producing EM photons as energy intensive as the lowest wavelength gamma rays in large quantities, as such they should be able to produce EUV photons much more easily, right? Given the gamma photons are much more energy intensive than EUV photons, more energy must be dedicated into producing the former in comparison to the latter in a particle accelerators, right? Steady state microbunching is just about applying ways in which produce and then concentrate coherently a large beam of photons of any wavelength or range or wavelengths, and with regards to EUV lithography that would be EUV photons, right?very possible. the limitation of course will be land use, but that's an infrastructure problem, and infrastructure is what China is good at.
the other thing is that SSMB EUVL allows for independent development of light source and optics, and isn't actually limited to 13.5 nm since synchrotron radiation is arbitrarily tunable.
Like I said before, the wavelength selection for lithography is all about the photochemical interaction with the resist. away from incident site of the EUV radiation. This causes line blurring.
DUV from ArF (193 nm) and KrF (248 nm) on the other hand, as the article above states, directly ionizes molecules to break bonds and cause chemical reactions. That means that they fulfill the condition of only causing chemical changes at exactly the point of incidence. This is especially true for ArF hardmask resists which help with the photoacid diffusion problem.
But why do they choose 13.5 nm then? The actual mechanism of the source is the same as any other gas phase light source: use some mechanism to ionize a gas phase molecule then when it falls back to ground state it emits light. You can't arbitrarily tune atomic energy levels, they are what they are and you have to just work with it.
But what if, you could get wavelengths shorter than 193 nm, with just as high brightness, but tune it to a wavelength that doesn't produce secondary electrons, so resist development is easier? And it was costless to tune the wavelength? That's what SSMB can offer.
In the medium term I do not think China will have an impact on EUV sales for ASML. Since China cannot get EUV machines for their own foundries they will just have to purchase services or chips abroad. So the machines will still get sold just not to China. What would cause a major impact on EUV machine sales would be a blanket ban on sales of EUV produced chips to China. This cannot possibly happen,
It's odd how all the Chinese related EUV presentations at EUV Litho (apart from the SSMB) seemed to have stopped as of 2016.
Appearance can be deceiving their research in EUV seem quite active, the shift from immersion lithography to EUV is pretty noticeable as they move to commercialize the former. Hopefully they will commercialize EUV as soon as possible.It's odd how all the Chinese related EUV presentations at EUV Litho (apart from the SSMB) seemed to have stopped as of 2016.