The Integrated Circuit Pilot Process R&D Center of the Institute of Microelectronics, Chinese Academy of Sciences is established under the support of the National 02 Science and Technology Major Project, designed and constructed according to the R&D needs of the industry, managed by the industrial technology R&D model, and operated by an international R&D team. R & D Center. The R&D center is committed to the research of CMOS pilot technology and other related technologies of silicon-based integrated circuits. It is the backbone of the research field of integrated circuit pilot technology in my country.
The R&D center currently has 150 R&D personnel, including 5 special experts of the National Thousand Talents Program, 1 specially-appointed expert of the Thousand Talents Program of Foreign Experts and 3 specially-appointed experts of the Hundred Talents Program of the Chinese Academy of Sciences. Its core team comes from world-renowned integrated circuit R&D institutions with more than 10 years of experience in R&D and scientific research management. Its engineering team has more than 5 years of industrial R&D or production experience, and there are more than 40 doctoral and master students.
The R&D center has a complete 8-inch CMOS pilot line, optical lithography 130nm CD, electron beam lithography 20nm, in ALD (HfO2, Al2O3, TiN, TaN, W), Ge and III-V epitaxy, TSV, It has strong process capabilities on modules such as multi-target PVD sputtering and ultra-low energy ion implantation. There is also a 4-inch MEMS R&D line. In addition to undertaking the CMOS advanced technology research and development projects in the National Science and Technology Major Project, the center can provide technology research and development services for large enterprises, product development services for small and medium-sized enterprises, basic research and development services for scientific research units and universities, and engineer training services for enterprises.
center positioning
1. Integrated circuit technology research and development platform
1. Research on CMOS leading process technology following Moore's Law;
2. Research on silicon-based devices and integration technologies beyond Moore's Law
2. Validation and process development platform for domestic equipment and materials
The R&D center currently has 150 R&D personnel, including 5 special experts of the National Thousand Talents Program, 1 specially-appointed expert of the Thousand Talents Program of Foreign Experts and 3 specially-appointed experts of the Hundred Talents Program of the Chinese Academy of Sciences. Its core team comes from world-renowned integrated circuit R&D institutions with more than 10 years of experience in R&D and scientific research management. Its engineering team has more than 5 years of industrial R&D or production experience, and there are more than 40 doctoral and master students.
The R&D center has a complete 8-inch CMOS pilot line, optical lithography 130nm CD, electron beam lithography 20nm, in ALD (HfO2, Al2O3, TiN, TaN, W), Ge and III-V epitaxy, TSV, It has strong process capabilities on modules such as multi-target PVD sputtering and ultra-low energy ion implantation. There is also a 4-inch MEMS R&D line. In addition to undertaking the CMOS advanced technology research and development projects in the National Science and Technology Major Project, the center can provide technology research and development services for large enterprises, product development services for small and medium-sized enterprises, basic research and development services for scientific research units and universities, and engineer training services for enterprises.
center positioning
1. Integrated circuit technology research and development platform
1. Research on CMOS leading process technology following Moore's Law;
2. Research on silicon-based devices and integration technologies beyond Moore's Law
2. Validation and process development platform for domestic equipment and materials
