FugaGallium Industry, an incubated company of the Hangzhou Institute of Optics, Fine Mechanics and Physics, in collaboration with Shanghai Gongcheng Semiconductor Technology Co., Ltd., is conducting collaborative research across the entire industry chain—from materials to devices to applications—focusing on key technologies for the industrialization of fourth-generation gallium oxide (GaO). The project has currently progressed to the device verification stage. This practice is considered China's first attempt to integrate the entire industry chain in the field of GaO, and it is of landmark significance for promoting the transition of ultra-wide bandgap semiconductors from research and development to application.
This technological breakthrough closely aligns with the strategic direction outlined in the "15th Five-Year Plan for National Economic and Social Development of the People's Republic of China," which calls for "accelerating the upgrading of the wide-bandgap semiconductor industry and promoting the industrialization of ultra-wide-bandgap semiconductors such as gallium oxide and diamond." On the application side, the project focuses on scenarios such as new energy storage and data center liquid cooling systems, while also meeting the product development needs of Gongcheng Semiconductor's 400V motor drive platform, achieving several key technological breakthroughs.
At the materials and device level, relying on the high-quality MOCVD gallium oxide epitaxial wafers independently developed by FugaGallium Industry, the team successfully fabricated high-performance gallium oxide vertical Schottky diode (SBD) devices, with subsequent packaging and application verification work completed by Gongcheng Semiconductor. Currently, the device has passed chip-level testing and packaging testing, and is advancing application verification in liquid cooling modules , laying the foundation for subsequent large-scale commercial applications and providing important support for the independent control of core technologies for China's fourth-generation semiconductors.
From a product and technology perspective, FugaGa has established systematic capabilities in gallium oxide equipment, materials, and epitaxy. In terms of equipment, the company has developed the EFG crystal growth equipment with a "one-click crystal growth" function, supporting 2-6 inch crystal fabrication, and has obtained numerous domestic and international patents. Simultaneously, the company has independently developed fully automated VB method crystal growth equipment, achieving a breakthrough in 6-inch gallium oxide single crystal growth in China, and can provide equipment and supporting process solutions according to customer needs.