News on China's scientific and technological development.
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Building a factory for more than 200 million dollars in France is a risky move on part of Huawei. 5G at the moment is no longer a technical or commercial issue but a political one. Even if the current French government allow Huawei 5G to be used in some cities that decision can be reversed by the next French government or due to US and EU pressure.
It's as much a prospective bribe as it is a factory. All bribes can be highly risky. The potential gains vastly exceed the risks as if the French accept it, it is an extra back door into 5G sales for EU. Of course it can be reversed at any time but land and assets can be liquidated for partial recouping of costs. On the other hand, if the French not only accept it but protect it over a period of time, they gain boosted tax revenues and jobs. So it's not just a singular bribe, but a bribe with payoff over time. The earlier the reversal, the smaller the gains for France.
Sichuan University develops the "world's first" real-time online analysis instrument for polymer combustion processes
the China Instrument and Control Society organized experts to conduct an appraisal of the "Real-time Online Analysis Instrument and System for Polymer Combustion Processes" completed by the National Natural Science Foundation of China's National Major Scientific Research Instrument Development Project (Free Application) completed by Sichuan University. The appraisal concluded that the polymerization The real-time online analysis instrument for the combustion process of materials is the world's first set of scientific research instruments that can simultaneously detect and analyze the flame retardant properties, real combustion behavior and flame retardant mechanism of polymers online in real time . It is technically difficult, highly innovative, and has independent intellectual property rights. This performance and functional index are superior to existing domestic and foreign commercial instruments used for flame retardant research, and the overall technology is at the leading international level.
supercat
Major
The whole genome of Han Chinese has been mapped.
Doesn't that also lay the groundwork for bioweapons targeting only Han Chinese? Even if the full data is protected, it will be hacked and stolen before being fed to the enemy's bioweapon research labs.
manqiangrexue
Brigadier
It would be helpful for that purpose but the reference genome used across the world today is based off of Caucasian DNA so Caucasians have the best results and dependability for precision medicine and no one hased used this to create a bioweapon against them (at least none that are publically known). The benefits this can have for Chinese people far far far outweigh the dangers. And also, if a hostile country with advanced technology like the US wanted to make these bioweapons, it wouldn't have any interest in hacking for this data; they could easily map the Han genome by calling some falun gong cultists and telling them that the US government needs their help to genocide their own people and they'd do a shenyun dance into the blood draw station telling the nurse to take every last drop so they can die in ecstasy under the dream that they killed very last Chinese person themselves.
some serious progress has been made .. wow
The Ruichuang team has made important progress in the research of mid-infrared inter-band cascade lasers..
Recently, Ruichuang Research Institute and Ruichuang Photonics team have made important progress in the research of mid-infrared interband cascade laser (ICL). Recently, Ruichuang Research Institute and Ruichuang Photonics team have made important progress in the research of mid-infrared interband cascade laser (ICL).
The relevant team has achieved high performance, continuous operation at room temperature, and multiple lasing wavelength bands. Inter-cascade laser series, combined with molecular beam epitaxy technology, grows inter-band cascade laser materials on InAs substrates, and the prepared narrow ridge devices have room temperature lasing wavelengths close to 4.6 μm and 5.2 μm. At present, most interband cascade lasers are grown on GaSb substrates, but the interband cascade laser reported by the Ruichuang team is grown on an InAs substrate. The waveguide cladding is composed of InAs/AlSb superlattice and highly doped InAs layer. constitute. Compared with common GaSb inter-baseband cascade lasers, InAs inter-baseband lasers have lower threshold current density at longer wavelengths (for example, longer than 4.5 μm).
For an interband cascade laser with a wavelength of 4.6μm, the room temperature pulse threshold current density of the wide ridge device is 292A/cm²; the continuous operating temperature of the narrow ridge device with a cavity length of 2mm and a ridge width of 10μm can reach 64°C, and the output power at room temperature is 20mW; At a similar wavelength, it is the highest continuous operating temperature reported so far. For an interband cascade laser with a wavelength of 5.2μm, the room temperature pulse threshold current density of the wide ridge device is 306A/cm²; the narrow ridge device with a cavity length of 2mm and a ridge width of 10μm has a maximum continuous operating temperature of 41°C and a room temperature output power of 10mW; where Threshold current densities are the lowest reported at similar wavelengths.
The interband cascade laser produces lasing based on energy band engineering and quantum mechanics. It has a high technical content and many difficulties in development. It is an important manifestation of the core technology of national nanometer and quantum devices. It is currently compared with the quantum cascade laser (QCL). ) is an important mid-infrared laser light source and has important application value and scientific significance in the fields of environmental monitoring, industrial control, medical diagnosis, and free space communications. The original concept of interband cascade lasers was first proposed by Professor Rui Q. Yang from the University of Oklahoma in the United States in 1994. Currently, the nearly lattice-matched InAs/GaSb/AlSb III-V material system is basically used.
To construct, most of the active areas are InAs/GaInSb type II quantum wells, whose capabilities can cover the wavelength range from mid-infrared to far-infrared. Interband cascade lasers combine the advantages of traditional semiconductor diode lasers and quantum cascade lasers. Compared with quantum cascade lasers that can also cover the mid-infrared band, they have lower threshold power density and threshold current density. This This extremely low power consumption advantage is very important in some applications that require portable and battery-powered devices. At present, the global inter-band cascade laser market is still dominated by foreign companies, and the country is still in the initial stage of industrial development. The two works reported in this article mark that Ruichuang Photonics has reached a high technical level in many aspects such as epitaxial design and device preparation of inter-band cascade lasers, and has become an enterprise that masters high-performance inter-band cascade laser technology. This work also laid a solid foundation for the subsequent development and mass production of single-mode tunable DFB inter-band cascade lasers.
The Ruichuang team has made important progress in the research of mid-infrared inter-band cascade lasers..
Recently, Ruichuang Research Institute and Ruichuang Photonics team have made important progress in the research of mid-infrared interband cascade laser (ICL). Recently, Ruichuang Research Institute and Ruichuang Photonics team have made important progress in the research of mid-infrared interband cascade laser (ICL).
The relevant team has achieved high performance, continuous operation at room temperature, and multiple lasing wavelength bands. Inter-cascade laser series, combined with molecular beam epitaxy technology, grows inter-band cascade laser materials on InAs substrates, and the prepared narrow ridge devices have room temperature lasing wavelengths close to 4.6 μm and 5.2 μm. At present, most interband cascade lasers are grown on GaSb substrates, but the interband cascade laser reported by the Ruichuang team is grown on an InAs substrate. The waveguide cladding is composed of InAs/AlSb superlattice and highly doped InAs layer. constitute. Compared with common GaSb inter-baseband cascade lasers, InAs inter-baseband lasers have lower threshold current density at longer wavelengths (for example, longer than 4.5 μm).
For an interband cascade laser with a wavelength of 4.6μm, the room temperature pulse threshold current density of the wide ridge device is 292A/cm²; the continuous operating temperature of the narrow ridge device with a cavity length of 2mm and a ridge width of 10μm can reach 64°C, and the output power at room temperature is 20mW; At a similar wavelength, it is the highest continuous operating temperature reported so far. For an interband cascade laser with a wavelength of 5.2μm, the room temperature pulse threshold current density of the wide ridge device is 306A/cm²; the narrow ridge device with a cavity length of 2mm and a ridge width of 10μm has a maximum continuous operating temperature of 41°C and a room temperature output power of 10mW; where Threshold current densities are the lowest reported at similar wavelengths.
The interband cascade laser produces lasing based on energy band engineering and quantum mechanics. It has a high technical content and many difficulties in development. It is an important manifestation of the core technology of national nanometer and quantum devices. It is currently compared with the quantum cascade laser (QCL). ) is an important mid-infrared laser light source and has important application value and scientific significance in the fields of environmental monitoring, industrial control, medical diagnosis, and free space communications. The original concept of interband cascade lasers was first proposed by Professor Rui Q. Yang from the University of Oklahoma in the United States in 1994. Currently, the nearly lattice-matched InAs/GaSb/AlSb III-V material system is basically used.
To construct, most of the active areas are InAs/GaInSb type II quantum wells, whose capabilities can cover the wavelength range from mid-infrared to far-infrared. Interband cascade lasers combine the advantages of traditional semiconductor diode lasers and quantum cascade lasers. Compared with quantum cascade lasers that can also cover the mid-infrared band, they have lower threshold power density and threshold current density. This This extremely low power consumption advantage is very important in some applications that require portable and battery-powered devices. At present, the global inter-band cascade laser market is still dominated by foreign companies, and the country is still in the initial stage of industrial development. The two works reported in this article mark that Ruichuang Photonics has reached a high technical level in many aspects such as epitaxial design and device preparation of inter-band cascade lasers, and has become an enterprise that masters high-performance inter-band cascade laser technology. This work also laid a solid foundation for the subsequent development and mass production of single-mode tunable DFB inter-band cascade lasers.