Chinese semiconductor thread II

tokenanalyst

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Registered Member
There are thousands of I-line, KrF, ArF, ArFi scanners across China in multiple fabs.
Why companies are going to put the money and effort to develop EUV mask fabrication technology unless someone is told them to and is financing these efforts? There are developments that are unknown to the public. They are seeing the writing in the wall.
 

tokenanalyst

Lieutenant General
Registered Member

Torrance: Plans to raise 1.156 billion yuan in its initial public offering to increase investment in the manufacturing and R&D of precision components for semiconductor equipment.​


The company intend to raise RMB 1.156 billion for the Torrens Precision Components Manufacturing and R&D Base project, as well as to supplement working capital.

Of the funds raised in this offering, 879.5448 million yuan will be invested in the intelligent manufacturing project for precision components, 76.6157 million yuan in the R&D center construction project, and 200 million yuan will be used to supplement working capital. The company stated that the projects funded by this offering align with relevant national industrial policies and the company's development strategy, closely focusing on the company's core business and helping to consolidate and enhance its position in the semiconductor industry.The company's market position in the precision components industry. Simultaneously, through the implementation of the fundraising projects, the company will further increase its R&D investment in new technologies and products, expand its production lines, enhance its innovation capabilities, and strengthen its core competitiveness.

According to its prospectus, Torrens has focused on the R&D, production, and sales of metal components for core semiconductor equipment such as thin-film deposition and etching equipment since its inception. From its founding, the company established a strategic goal of growing alongside domestic semiconductor equipment manufacturers and has built solid strategic partnerships with several leading domestic semiconductor companies.

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tokenanalyst

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Lens Technology's TGV glass substrate pilot line has been fully operational, deeply integrating with overseas customers to develop HBM advanced packaging.​


Lens Technology a leading manufacturer of precision consumer electronics, fully disclosed the latest R&D and industrialization progress of its TGV glass substrate on the investor interaction platform. The company officially entered the semiconductor advanced packaging core material track by leveraging its years of advantages in ultra-thin glass precision processing, targeting the long-term incremental market of AI computing power HBM and 2.5D/3D chip packaging.

The company revealed that it has now built an independent pilot production line for dedicated TGV glass substrates, and has independently overcome two core technologies: laser stealth drilling and high-precision chemical etching. It has solved common industry challenges such as micron-level through-hole processing of brittle glass and substrate warpage control. The roundness and thermal stability of the through-holes have reached the verification standards of similar overseas products. At the same time, as the main drafting unit of the group standard "Technical Specification for 3D Packaging Glass Through-Hole (TGV) Process", it has a complete independent process patent system.

In terms of application scenarios, the TGV glass substrate developed this time is mainly suitable for AI server GPUs in HBM high-bandwidth memory stacking, Chiplet heterogeneous integration, and high-end computing power interposers. Compared with traditional organic ABF substrates and silicon interposers, glass substrates have advantages such as low thermal expansion coefficient, ultra-low high-frequency signal loss, and the ability to be made into large-size substrates.​


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tokenanalyst

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Electron-Induced C─F Bond Activation in Sn6-oxo Cluster Resist for Enhanced Sensitivity and Sub-10-nm Patterning.​

ABSTRACT​


Metal-oxo cluster (MOC) resists are promising candidates for extreme ultraviolet lithography (EUVL), but optimizing the resolution, line-edge roughness (LER), and sensitivity (RLS) trade-off remains challenging. Leveraging dissociative electron attachment (DEA) to activate C─F bonds provides a controllable handle to improve this RLS trade-off, yet remains underexplored. Here, we report a room-temperature, scalable synthesis of a tunable series of Sn-oxo clusters and demonstrate hundred-gram-scale, single-batch production. The fluorinated FPAA demonstrates enhanced sensitivity without compromising resolution or LER. Under electron beam lithography (EBL), FPAA achieves a critical dimension (CD) of 9.1 nm and an LER of 2.2 nm, and enables high-fidelity complex patterning. Additionally, FPAA exhibits robust performance under deep ultraviolet (DUV) lithography and EUVL, achieving a CD of 20.9 nm under EUVL. FPAA also shows exceptional plasma resistance, achieving a high estimated Si:resist etch selectivity of >50:1. Mechanistic analyses indicate that irradiation-generated low-energy secondary electrons (LESEs) promote electron-induced C─F activation, consistent with a DEA-mediated pathway. Concurrently, organic ligand bridging and Sn─O─Sn network densification occur, forming a crosslinked network that drives the solubility switch. This work elucidates the lithographic mechanisms of Sn-oxo clusters and provides design principles for MOC resists, supporting progress toward sub-10-nm lithographic resolution.​

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