Chinese semiconductor thread II
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3D AI chip startup Sunmiao Technology completes two rounds of financing totaling nearly 1 billion yuan.
Beijing-based 3D AI chip startup, Sunmiao Technology, recently completed two rounds of financing totaling nearly 1 billion yuan. The funds raised will be used for the research and development and mass production of 100% domestically produced 3D computing chips.
The Pre-A round of financing was jointly led by Source Code Capital and Stone Creek Capital, with follow-on investments from several core semiconductor industry players, including Lenovo Capital; the Pre-A1 round of financing was led by Xianghe Capital, and also received support from state-owned capital such as China Development Bank Financial Leasing and Beijing Shunxi Capital.
Founded in November 2022, Sunmiao Technology's core product is a customized 3D chip for AI large-scale model inference. It hopes to solve the "memory wall" problem through innovation in computer architecture and the domestic 3D IC supply chain.
The Pre-A round of financing was jointly led by Source Code Capital and Stone Creek Capital, with follow-on investments from several core semiconductor industry players, including Lenovo Capital; the Pre-A1 round of financing was led by Xianghe Capital, and also received support from state-owned capital such as China Development Bank Financial Leasing and Beijing Shunxi Capital.
Founded in November 2022, Sunmiao Technology's core product is a customized 3D chip for AI large-scale model inference. It hopes to solve the "memory wall" problem through innovation in computer architecture and the domestic 3D IC supply chain.
Juchen Technology: Net profit increased by 25.01% year-on-year in 2025.
Juchen Technology released its 2025 preliminary financial results, showing that the company achieved operating revenue of RMB 1.22 billion and net profit attributable to owners of the parent company of RMB 363 million, representing year-on-year increases of 18.73% and 25.01% respectively, both setting new records for the best performance in the same period in history.
The company's shipments of DDR5 SPD chips, automotive-grade EEPROM chips, and high-performance industrial-grade EEPROM chips achieved rapid growth compared to the same period last year. The optical image stabilization (OIS) camera motor driver chip has been commercially deployed in multiple mid-to-high-end models of mainstream smartphone brands, further optimizing the product sales structure and driving the company's overall gross profit margin to increase by 2.46 percentage points compared to the same period last year.
my thread of the latest on YMTC and CXMT market share as well as the growing memory market pie and their move into HBM3.
Early stage of explosive expansion in extreme ultraviolet source vessel
Abstract
In an extreme ultraviolet (EUV) vessel, intense heating occurs when a high-power laser irradiates tin droplets, generating extreme thermal pressure gradients that drive complex flow dynamics. This review focuses on two critical aspects governing flow properties and debris transport within the vessel: main shock behavior and thermal expansion dynamics. Key considerations include finite-source shock dynamics, environmental effects on shock propagation, gas contact motion, and interface instabilities. The evolution of the main shock and gas contact is primarily determined by the initial pressure ratio and sound speed ratio between the heat source and ambient gas. Furthermore, Rayleigh-Taylor and Richtmyer-Meshkov instabilities dominate the evolution of gas-gas interfaces. This work presents a comprehensive analysis of the complex flow mechanisms underlying early-stage, high-temperature flow expansion in EUV source vessels.
Four-Level Stacked Si0.7Ge0.3 Channel Gate-All-Around Transistor Using Novel Channel Release and Passivation Technology
Abstract:
Four-level Si0.7Ge0.3 nanosheet (NS) gate-all-around field effect transistor (GAAFET) is successfully prepared using novel channel release and passivation technology. First, a novel S-TMAH solution, which adds surfactant to tetramethylammonium hydroxide (TMAH), is developed to improve the selectivity of Si to Si0.7Ge0.3 to 23.5:F1 and attains excellent morphology of Si0.7Ge0.3 NSs. Additionally, compared with conventional O3 only passivation, a O 3+ Al2 O3 passivation technology is also adopted to reduce D it by 49%. As a result, after adopting the above-mentioned new technologies, stacked Si0.7Ge0.3 NS GAAFET exhibits superior electrical properties with subthreshold swing (SS) of 71 mV/dec, DIBL of 14 mV/V, peak hole mobility of 221 cm −2 /V ⋅ s, and Ion / Ioff ratio of 4.7×106 . This proves that S-TMAH release process combined with O 3+ Al2 O3 passivation technology is a promising candidate for application to SiGe high mobility channel NS GAAFET.
Zhu Yiming who is chairman of Gigadevice was also a co-founder of CXMT. Prior to this he worked in silicon valley for years. A very common story amongst many top chip related firms in China such as AMEC.