Led by Suzhou Jingzhan Semiconductor Co., Ltd. and following the CASAS standard-setting process, after discussions in the standard drafting group meeting, extensive solicitation of opinions, and committee draft voting, the group standard T/CASAS 060-2024 "GaN epitaxial wafers on silicon substrates for HEMT power devices" was officially released to the industry on August 29, 2025.
T/CASAS 060-2024, "Gallium Nitride Epitaxial Wafers on Silicon Substrates for HEMT Power Devices," specifies the classification, technical requirements, test methods, inspection rules, marking, packaging, transportation, and storage of GaN epitaxial wafers on silicon substrates for HEMT power devices. It applies to the research, development, production, testing, analysis, and quality evaluation of composite-structure GaN epitaxial wafers grown on silicon substrates for use in power electronics.
Main drafting units of this document:
Suzhou Jingzhan Semiconductor Co., Ltd., Beijing Zhongboxin Semiconductor Technology Co., Ltd., Xiamen San'an Integrated Circuit Co., Ltd., Sun Yat-sen University, Institute of Semiconductors, Chinese Academy of Sciences, Fifth Institute of Electronics, Ministry of Industry and Information Technology, Peking University Dongguan Institute of Optoelectronics, Guangdong University of Technology, Dalian University of Technology, Zhuhai Gallium Future Technology Co., Ltd., Institute of Microelectronics, Chinese Academy of Sciences, Xinlian Integrated Circuit Manufacturing Co., Ltd., and Beijing Third Generation Semiconductor Industry Technology Innovation Strategic Alliance.