Zhanxin Electronics launched the 1B packaged 1200V 9mΩ silicon carbide (SiC) half-bridge power module (IV1B12009HA2L), which provides efficient and low-cost solutions for photovoltaic, energy storage and charging pile applications. The product has passed industrial-grade reliability testing.
The size of this module product (IV1B12009HA2L) is the same as the standard Easy 1B package, and its shell is compact with a height of only 12mm. The internal chip of the module is arranged on a ceramic copper-clad substrate (DCB), which has an internal insulation function and can be directly attached to the heat sink without the need for an external ceramic insulating gasket. It is safe and reliable, and has better heat dissipation. At the same time, the module adopts a spring mounting seat, which is easy to assemble, and the integrated mounting clip makes the installation firm.
Module circuit topology
The module product has a built-in 1200V 9mΩ SiC MOSFET chip to form a half-bridge circuit, which has low stray inductance, simplifies the design of the application circuit, and improves the power density compared to discrete device solutions. At the same time, it integrates a thermistor (NTC) to monitor the temperature.
This product has a Kelvin source pin, which can suppress the driving voltage spike when the SiC MOSFET switches at high speed, ensuring the safety and reliability of high-frequency switching applications.
SiC MOSFET Chip
This module uses Zhanxin Electronics' second-generation planar gate 1200V SiC MOSFET chip, which has good performance and reliability, supports +15V to +18V turn-on voltage and -3.5V to -2V turn-off voltage, and has a rated current of 100A.