Chinese semiconductor thread II

[Legume7]

Huawei will launch new products on 3/20, which will mark the official release of HarmonyOS.



The first device to support HarmonyOS out of the box will be in a previously unseen form factor and will be part of the Pura series. So far the rumors are conflicting, but it appears to have a 16:10 aspect ratio (much shorter that normal smartphones), has screen size 6.3", and potentially folds.

9020A是新产线出来的，完全自主可控！ 之前讲过，但是一些原因没有明说，很多消息我不敢明说！

There are also some other rumors not yet posted in the thread. The Mate 70 Pro Premium edition was recently released with the Kirin 9020A, which is a downclocked Kirin 9020. There are some rumors that this is the first SoC made with domestic lithography (source: 元陌数码,

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). The source is not 100% reliable but has leaked accurate information before. Given that the SSA800 was delivered a long time ago, it makes sense. Maybe people with better knowledge can comment on the likelihood of this.

P...如果用3个不同的芯片，会怎样？

The Pura 80 Series will use 3 different SoC, likely the Kirin 9020A for the base model, the 9020 for the Pro model, and the 9020S for the Ultra/Art Model (source: 元陌数码,

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).

目前摸到的三个主摄物料，一个自研国产一英寸主摄SC5A0CS，50Mp，RYYB；一个IMX989 RYYB主摄；一个1/1.3" 50Mp超大底主摄，都配物理可变光圈

I previously wrote that Pura 80 Ultra/Art would likely use a 1" sensor from SmartSens. Now the exact model is confirmed as the SmartSens SC5A0CS (source: Digital Chat Station,

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). The Mate 70 Pro+ was confirmed by TechInsights to have used the SmartSens SC580XS (sensor size 1/1.28") and already had the best performing main camera in 2024. I expect the Pura 80 Ultra/Art to extend this lead further, particularly in night photography and digital zooming, which benefit from a larger sensor size.

目前只确定华为会继续用双层OLED，并推进技术迭代，主要是能降低功耗，弥补芯片端的制程差异

The Pura 80 Ultra/Art will also feature a tandem OLED display (almost certainly by BOE). Source is Digital Chat Station (

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). Tandem OLED displays increase brightness and decrease power consumption, but the downside is that they are super expensive because of low yield.

 

[tphuang]

Huawei will launch new products on 3/20, which will mark the official release of HarmonyOS.

View attachment 147695

The first device to support HarmonyOS out of the box will be in a previously unseen form factor and will be part of the Pura series. So far the rumors are conflicting, but it appears to have a 16:10 aspect ratio (much shorter that normal smartphones), has screen size 6.3", and potentially folds.

View attachment 147696View attachment 147697View attachment 147698



There are also some other rumors not yet posted in the thread. The Mate 70 Pro Premium edition was recently released with the Kirin 9020A, which is a downclocked Kirin 9020. There are some rumors that this is the first SoC made with domestic lithography (source: 元陌数码,

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). The source is not 100% reliable but has leaked accurate information before. Given that the SSA800 was delivered a long time ago, it makes sense. Maybe people with better knowledge can comment on the likelihood of this.



The Pura 80 Series will use 3 different SoC, likely the Kirin 9020A for the base model, the 9020 for the Pro model, and the 9020S for the Ultra/Art Model (source: 元陌数码,

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).



I previously wrote that Pura 80 Ultra/Art would likely use a 1" sensor from SmartSens. Now the exact model is confirmed as the SmartSens SC5A0CS (source: Digital Chat Station,

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). The Mate 70 Pro+ was confirmed by TechInsights to have used the SmartSens SC580XS (sensor size 1/1.28") and already had the best performing main camera in 2024. I expect the Pura 80 Ultra/Art to extend this lead further, particularly in night photography and digital zooming, which benefit from a larger sensor size.



The Pura 80 Ultra/Art will also feature a tandem OLED display (almost certainly by BOE). Source is Digital Chat Station (

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). Tandem OLED displays increase brightness and decrease power consumption, but the downside is that they are super expensive because of low yield.

interesting.

So 9020A is the downgraded/binned version, 9020 is the regular, 9020S is the high end version.

I would seriously doubt that 9020A is made using domestic lithography machine. That kind of comment makes me doubt his entire credibility. downgraded versions are binned chips.

 

[tphuang]

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looks like Tencent is going to put in a major order for H20s with Nvidia. I have no idea how this is going through though given the likely upcoming AI chip ban from US govt. Tencent & ByteDance were Nvidia's largest customers from China in 2024.

https://twitter.com/i/web/status/1900156096985059690

YMTC launching 3 more products, looks like the production is rolling from them.

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Longways coming out with multiple self designed control chips for various storage products like UFS 4.1 and eMMC Ultra

 

[Legume7]

interesting.

So 9020A is the downgraded/binned version, 9020 is the regular, 9020S is the high end version.

I would seriously doubt that 9020A is made using domestic lithography machine. That kind of comment makes me doubt his entire credibility. downgraded versions are binned chips.

He was banned before for leaking information and in some instances he has leaked certain information the earliest, so he definitely has sources. On the other hand, he has made some claims that later turned out to inaccurate, so we have to wait and see.

While downgraded versions are most often binned, especially in recent history, this is actually not always the case. For example, the Apple A9 used both Samsung 14LPE and TSMC 16FFC. While not marketed as such, the Samsung version was a downgraded version of the TSMC version, hence the Chipgate scandal. Something must have happened between November and March regarding Kirin 9020 supply since the Mate 70 series was in low stock for so long, but now they are coming out with a new model. This could be due to a lot of factors though. So I also doubt the claim of domestic lithography use, but wouldn't rule it out 100%.

 

[tokenanalyst]

Lianchuang semiconductor laser production base project settled in Wuhan​

Recently, the Lianchuang semiconductor packaging accessories and new laser application equipment production base settled in Caidian District, Wuhan. Lianchuang Precision Machinery Co., Ltd. is an enterprise that provides industrial automation solutions for automatic coupling packaging equipment for optical communication modules and assembly and testing production lines for automotive parts. The company plans to invest 300 million yuan in Yuxian Street to build a Lianchuang semiconductor packaging accessories and new laser application equipment production base, mainly arranging water-guided laser cutting, glass laser welding, laser online monitoring equipment and ceramic splitter production and manufacturing automation business production lines. After the project is fully completed and put into production, it is expected to achieve an annual output value of more than 400 million yuan.

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[tokenanalyst]

Ouye Semiconductor completed B2 round of financing of hundreds of millions of yuan to promote large-scale application of products​

On March 13, 2025, Ouyeel Semiconductor, the first domestic third-generation E/E architecture AI SoC chip and solution provider for smart cars, announced that it has successfully completed a B2 round of financing worth hundreds of millions of RMB. This round of financing was jointly invested by SDIC, China Merchants Capital and Aggregate Capital.

This is a new round of financing completed by Ouyeel Semiconductor recently after the B1 round of financing in November last year. In this round of financing, old shareholders such as SDIC, China Merchants Capital and Juhe Capital have all supported the company, fully demonstrating their firm confidence in the company's strategic value and high recognition of its market prospects.

As an automotive intelligent platform-level AI SoC chip and solution provider, Ouye Semiconductor focuses on the core needs of the automotive industry's evolution to the third-generation E/E architecture, and promotes the implementation of intelligent technology in various practical scenarios with a forward-looking "Everything+AI" strategy, helping automakers create a full-vehicle intelligent experience that is visible and within reach for consumers.

Ouye Semiconductor's series of chip products cover the chip needs of smart car terminal intelligent components, intelligent regional processors (ZCU) and intelligent driving central computing units. At the same time, it has industry-leading intelligent algorithms, and flexible layered delivery of software and solutions, which greatly reduces the development costs of new products and new features for customers and shortens the time to get on board. At present, in the automotive intelligent scene market such as AI headlights, AI electronic rearview mirrors, regional processors, ADAS, etc., Ouye Semiconductor has formed a strong technical and market leading advantage, and has successively achieved Design in and technology licensing cooperation with dozens of Tier 1 partners, and many models have been designated.

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[tokenanalyst]

Sanan Optoelectronics disclosed: Chongqing's 8-inch silicon carbide substrate production capacity has reached 500 pieces/week​

Sanan Optoelectronics disclosed on the investor interaction platform that its 8-inch silicon carbide substrate production line in Chongqing has officially started production, with a current weekly production capacity of 500 pieces. This progress marks an important step for the domestic silicon carbide industry in the field of large-scale production, providing key material support for emerging markets such as new energy vehicles and smart grids.

Public information shows that Chongqing Sanan's 8-inch silicon carbide substrate production line was put into operation in September 2024. It is a supporting project for the joint venture project between Sanan Optoelectronics and STMicroelectronics. The project has a total investment of 7 billion yuan and a designed annual production capacity of 480,000 pieces. It aims to provide core raw materials for the 8-inch silicon carbide wafer factory of STMicroelectronics (a joint venture between Sanan and ST). It is expected that with the optimization of technology and the increase in production capacity, it will gradually increase to 10,000 pieces per week in the future.

Sanan Optoelectronics said that Chongqing Sanan's substrate products have been stably supplied to the Anyifa production line, and as the production capacity increases, the cost advantage will become more apparent. In addition, after the project reaches full production, it is expected to meet more than 40% of the domestic demand for automotive-grade silicon carbide.

At present, San'an Optoelectronics is simultaneously advancing the layout of production capacity in multiple locations: Hunan San'an currently has a monthly production capacity of 16,000 pieces of 6-inch silicon carbide substrates, and the 8-inch substrate and epitaxial production capacity has reached 1,000 pieces/month, and the supporting chip equipment is being debugged; Suzhou Sko Semiconductor, a joint venture with Ideal Auto, has completed the verification of its full-bridge power module and will start mass production in 2025.

At present, the penetration rate of domestic silicon carbide devices in the new energy vehicle market is less than 10%, but brands such as BYD and Xiaopeng have begun to introduce domestic SiC MOSFET. Sanan Optoelectronics revealed that its silicon carbide products for on-board chargers and air-conditioning compressors have achieved small-batch shipments, and will further expand into emerging fields such as humanoid robot motor control in the future.

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[tokenanalyst]

Fuga Gallium Industry has made a breakthrough in gallium oxide MOCVD homoepitaxial technology, helping the downstream vertical power electronic device industry to land.​

Hangzhou Fuga Gallium Technology Co., Ltd. (hereinafter referred to as Fuga Gallium), an incubated enterprise of the Hangzhou Institute of Optics and Fine Mechanics, has made important technological breakthroughs in the research and development of gallium oxide MOCVD homoepitaxial thin films. A thin film with a thickness of more than 10 microns was homoepitaxially grown on Fuga Gallium's gallium oxide single crystal substrate. Verified by national authoritative testing agencies, this technology has reached the international leading level. Related standardized products will be launched in April 2025, providing key material support for high-end equipment such as new energy vehicle high-voltage platforms and smart grid flexible transmission devices.

The test results of the third-party testing agency, China National Institute of Metrology, show that the background carrier concentration of the MOCVD epitaxial film is controlled as low as 3.6E15 cm-3, and the mobility reaches 172.7 cm2/V·s. The successful development of high-quality gallium oxide homoepitaxial film based on MOCVD technology will help the rapid implementation of the vertical high-voltage power electronic device industry above 3300V in the future.

MOCVD epitaxial technology has the advantages of high growth crystal quality, good thickness uniformity, fast deposition speed, and precise doping control. It has been applied in large-scale mass production in the second-generation and third-generation semiconductor industries such as gallium arsenide and gallium nitride. For a long time, MOCVD epitaxial growth of gallium oxide thin films has also had problems such as high background carrier concentration and high defect density.

Fuga Gallium uses MOCVD technology, based on its self-produced gallium oxide substrate products, and through substrate surface optimization, multi-step epitaxial growth and other process strategies, it has greatly improved the crystal quality and thickness of the epitaxial film, and achieved gallium oxide homoepitaxial films with low background carrier concentration and high mobility, and its comprehensive performance indicators have reached the international advanced level . The successful development of MOCVD homoepitaxial films with a thickness of more than 10 microns shows that the MOCVD epitaxial technology route has the ability to mass-produce thick, high-quality gallium oxide homoepitaxial wafers, and can provide material support for the development of vertical gallium oxide power devices.

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[tokenanalyst]

Component and performance evolution of Zr filters induced by annealing and synchrotron radiation in EUV range​

​

Abstract​

Freestanding Zr filters are important devices for improving spectral purity in the extreme ultraviolet range of 7–20 nm, and their irradiation resistance directly determines their life and efficiency. We prepared multilayered Zr/B4C and Zr/Si filters using magnetron sputtering. Their transmittance reached a maximum of 23% (λ = 13.5 nm). Microwatt-radiation-induced structural changes in the filters were investigated at the metrology beamline (BL08B) of the National Synchrotron Radiation Laboratory. The aging of the Zr filters was measured and analyzed. The experimental results revealed that the damage was noticeable on the irradiated filter surfaces with different states, suggesting that the main factors causing the degradation of the filters were oxidation and carbon contamination at the surfaces. Furthermore, the thermal stability of the Zr filters was studied by annealing, and the heat accumulation during the damage process was estimated using finite-element numerical simulations and X-ray photoelectron spectroscopy measurements. Silicide formation at the Zr-Si-O system interfaces was found to be key to enhancing the stability of the filters.​

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