Chinese semiconductor thread II

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Sichuan Tongchao OLED electrode component new product and recycling project production line officially broke ground!

Semiconductor Industry Network learned that Tongchao Precision reported on March 3 that recently, with the strong support of Mianyang Economic Development Zone, the OLED electrode component new product and recycling project production line of Sichuan Tongchao Precision Technology Co., Ltd., a subsidiary of Wuhu Tongchao Holdings, officially broke ground. The Sichuan Tongchao OLED component project is the first OLED new product recycling production line in China, aiming to break the foreign monopoly, realize the localization of electrode components, and effectively alleviate the "bottleneck" problem of key components in the domestic high-end display industry chain.

It is reported that key components such as electrodes are used inside the reaction chamber of CVD equipment, which have an important impact on the gas flow field and temperature field during the CVD process, and will directly affect the reliability and stability of the above equipment, and then affect the performance and yield of display panel products. They are core process components. After the Sichuan Tongchao project is put into production, the products will cover vacuum electrodes for all oxide process products below the G10.5 generation, further improving the company's production capacity, technical level and market competitiveness, and laying a solid foundation for the company's long-term development. At the same time, the project will also significantly reduce the dependence of domestic display panel manufacturers on imported vacuum components and products, enhance the resilience of the industrial chain, form industrial synergy with leading companies such as BOE, and help the Sichuan-Chongqing region build a global new display industry highland.

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With a total investment of over 1 billion yuan, the Xinti Semiconductor High-end Equipment Headquarters Base Project was established in Huishan

The SEMTEK semiconductor high-end equipment headquarters base project was officially settled in Huishan Economic Development Zone. Meng Dong, member of the Standing Committee of Huishan District Committee, Secretary of the Party Working Committee and Director of the Management Committee of Huishan Economic Development Zone, Wu Mingfang, Chairman of SEMTEK Semiconductor, and other leaders and guests attended the signing ceremony.

Xinti Semiconductor will continue to leverage its innovative advantages in the semiconductor field and pursue the wave of domestic substitution. Over 1 billion yuan invested to build a "core" future "We have carefully considered choosing Huishan Economic Development Zone to build the group's listed headquarters. Huishan Economic Development Zone has a complete industrial cluster and strong strength in technology and finance to enable industrial development, which is crucial for our future layout."

Wu Mingfang, chairman of Xinti Semiconductor, said that the total planned investment of the project is over 1 billion yuan, with a land purchase of about 50 mu, and the construction of new factories, office buildings, R&D centers and supporting facilities of about 55,000 square meters. It focuses on the research and development and mass production of high-end equipment such as wafer-level flux cleaning machines, metal etching machines, and carrier cleaning machines. It is expected that the annual production capacity will reach 600 sets within 5 years, covering the fields of semiconductor wet process and pan-semiconductor equipment, and realizing the full domestic assembly of high-end wet process equipment. After reaching full production, the annual invoiced sales will exceed 1 billion yuan, and the annual tax payment will reach 40 million yuan.

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Chinese company bids to acquire Belgian gallium nitride manufacturer BelGaN

Three candidates have reportedly made offers to acquire the Oudenaarde production base of Belgian GaN (gallium nitride) semiconductor foundry BelGaN.

The bidders include two Asian companies and one European company. One of the bidders is Silex Microsystems AB, a Swedish subsidiary of Chinese company Silex Microelectronics, the world's largest pure-play foundry for MEMS components.

The predecessor of BelGaN's gallium nitride factory was established in 1983 under the name "MIETEC", which was later acquired by Alcatel and AMI and sold to ON Semiconductor in 2008, and began GaN development in 2009. ON Semiconductor hopes to sell the silicon wafer factory as part of the reorganization, but spin it off as BelGaN's GaN foundry in 2022.

The plant has been building expertise in automotive semiconductor production for more than 30 years. The Oudenaarde plant was previously transforming from a silicon wafer plant to a variety of career opportunities in the GaN plant, operations and various service departments, but attempts to adopt new chip technologies have not been able to bear fruit quickly. The company has been facing cash flow shortages and can no longer maintain the plant where more than 400 people work.

BelGaN had ties to Chinese venture capital firms but was unable to attract sufficient funding to finance the transition to GaN production.

BelGaN filed for bankruptcy in August 2024, and an auction in January 2025 raised more than 23 million euros by selling chipmaking equipment.

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Total investment of 200 million yuan! Jiangsu Changguang Space-Time High-Performance Laser Chip Project is put into production

The completion and commissioning ceremony of Jiangsu Changguang Space-Time High-Performance Optical Chip Project was held in Donghua Science and Technology Industrial Park, Huishan High-Tech Zone (Luoshe Town). Wang Lijun, an academician of the Chinese Academy of Sciences, Ning Yongqiang, a researcher at the Changchun Institute of Optics, Fine Mechanics and Physics of the Chinese Academy of Sciences, Zhang Xing, general manager of Jiangsu Changguang Space-Time Optoelectronic Technology Co., Ltd., Zhang Renhong, secretary of the Party Working Committee of Huishan High-Tech Zone and secretary of the Party Committee of Luoshe Town, and town leaders Wan Zhijian, Mao Chunhao, Xiao Zhicheng and Sheng Yang attended the ceremony.

Wang Lijun said in his speech that quantum precision measurement is a top technology. In the past, it was long constrained by the technical blockade of high-performance laser chips and the reliance on imports of core components, which seriously restricted scientific research and industrial breakthroughs. After years of technical research, the team successfully overcame key problems such as laser chip stability and ultra-low noise, and developed laser chips with high temperature, narrow linewidth and high power, realizing a series of quantum precision measurement laser chip products.

The completion and commissioning of the project today fully reflects the coordinated efforts of government support, enterprise transformation, and capital empowerment, which is the only way to achieve high-level scientific and technological self-reliance. The new base will accelerate industrial integration, continuously break through laser chip technology, promote the deep integration of laser chip technology and quantum technology with artificial intelligence and industrial Internet, realize the coordinated development of upstream and downstream industrial chains, and gather more talents, technologies and projects to Huishan High-tech Zone.

In his speech, Zhang Renhong pointed out that Changguang Space is the second academician industrialization project introduced by the High-tech Zone, and it is also a demonstration result of the High-tech Zone in cultivating new quality productivity. This year, the High-tech Zone has entered its fourth year of creation. After more than three years of construction, the High-tech Zone has formed three business cards, namely commercial aerospace, China-Europe Express, and Grand Canal Cultural Industrial Park. 2,000 acres of industrial land have been successfully planned and prepared, more than 1 million square meters of industrial carriers and innovation carriers are under construction, 16 infrastructure projects with a total investment of 2.9 billion yuan and 8 urban construction projects with a total investment of 18 billion yuan are being fully launched. The High-tech Zone has become the new functional zone with the largest development space, one of the towns with the most complete industrial supporting facilities in the city, and one of the areas with the most potential for urbanization in the city.

The successful commissioning of the Changguang Space-Time Project will not only achieve continuous breakthroughs in industrialization, but also achieve continuous breakthroughs in scientific and technological innovation. It will also become a representative of the new quality productivity of the high-tech zone and contribute to the high-quality development of the high-tech zone.

The Changchun Institute of Optics, Fine Mechanics and Physics of the Chinese Academy of Sciences is the first research institute established in the field of optics in New China. The high-performance optical chip project team is the first unit in China to carry out the development of quantum precision measurement optical chips. It has taken the lead in breaking through the core technology of the laser chip series used for quantum precision measurement, and has the technical strength to match foreign products. Its products have passed multiple certifications such as ISO9001 quality management system and weapons and equipment quality management system.

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[Wrought]

Belgian gallium nitride manufacturer BelGaN

Damn, that's actually a sick name.

 

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Yitong Semiconductor's IPO on the Science and Technology Innovation Board was approved for registration and will raise 3 billion yuan to invest in two major projects


The China Securities Regulatory Commission’s website disclosed the "Approval on the Registration of the Initial Public Offering of Beijing Etang Semiconductor Technology Co., Ltd.", approving the registration application for the initial public offering of Beijing Etang Semiconductor Technology Co., Ltd. (hereinafter referred to as "Yitang Semiconductor").

According to information, Eitong Semiconductor is a semiconductor equipment company headquartered in China, with R&D and manufacturing bases in China, the United States and Germany. It operates globally. It is mainly engaged in the R&D, production and sales of wafer processing equipment required in the integrated circuit manufacturing process, and provides integrated circuit manufacturing equipment and supporting process solutions including dry stripping equipment, rapid thermal processing equipment and dry etching equipment to global integrated circuit manufacturers.

According to the plan, Eitong Semiconductor intends to raise 3 billion yuan for the Eitong Semiconductor integrated circuit equipment R&D and manufacturing service center project, the construction of Eitong Semiconductor's high-end integrated circuit equipment R&D project, as well as development and technology reserve funds.

Among them, the Yitong Semiconductor Integrated Circuit Equipment R&D and Manufacturing Service Center Project is an integrated circuit equipment R&D and manufacturing service center project, implemented by Yitong Semiconductor, and the construction site is located in the N15M2 plot of the 0701 block in the south of Beijing Economic and Technological Development Zone.

The total investment of this project is expected to be RMB 963.38 million, of which RMB 823.38 million is for fixed assets and RMB 140 million is for working capital. The project intends to use RMB 800 million of raised funds.

After the completion of this project, Yitong Semiconductor's Beijing manufacturing base will be able to significantly increase the production capacity of dry stripping equipment, rapid thermal processing equipment and dry etching equipment; and simultaneously add multiple R&D laboratories and training rooms to comprehensively enhance the company's R&D, manufacturing and service capabilities for integrated circuit equipment.

The specific research and development directions of this project include: technical improvement and development of atomic-level surface treatment and ultra-high selectivity etching equipment, technical development of advanced dry stripping equipment, technical improvement and development of a new generation of ultra-high capacity stripping equipment and etching equipment based on the Hydrilis? platform, technical development of high-temperature vacuum rapid annealing and related integrated semiconductor processing equipment, technical development of new semiconductor etching equipment, and continuous improvement and development of mature integrated circuit equipment.

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Changchun Institute of Optics, Fine Mechanics and Physics achieves 100 fJ/bit ultra-low power consumption high-speed vertical cavity surface emitting laser

The team of the Bimberg Sino-German Green Photonics Research Center of the Changchun Institute of Optics, Fine Mechanics and Physics proposed a VCSEL design method based on oxidation aperture optimization, photon lifetime regulation and gain cavity mode mismatch, and obtained a high-speed single-mode VCSEL chip, which improved the modulation bandwidth and reduced power consumption, achieving an error-free transmission rate of 60Gb/s based on NRZ modulation under 100m optical fiber conditions, with power consumption of 98fJ/bit@50Gb/s and 168fJ/bit@60Gb/s, reaching the international advanced level of similar devices.

The 100fJ/bit ultra-low power consumption high-speed vertical cavity surface emitting laser achieved by Changchun Institute of Optics, Fine Mechanics and Physics can solve the problem of surging energy consumption in high-speed optical interconnection and has important application prospects.

The related results were published in Applied Physics Letters with the title “Energy efficiency of 100 fJ/bit for bit rates beyond 50 Gb/s for 940 nm single mode VCSELs”

The first author of the article is Mansoor A. Maricar, a doctoral student at the Sino-German Center, and the corresponding author is Researcher Tian Sicong. The research was funded by the Key R&D Program Project (No. 2021YFB2801000).

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Breakthrough! Chinese scientists create "two-dimensional metal"

Recently, a research team from the Institute of Physics, Chinese Academy of Sciences, has successfully "reshaped the golden body of metal materials, achieving a single atomic layer of metal with a thickness of only one two hundred thousandth of the diameter of a hair, opening up a new dimension for human exploration of the material world.

The relevant research results were published in the international academic journal Nature under the title "Realization of Angstrom Thickness Limit Two-Dimensional Metals". International reviewers unanimously gave high praise, believing that this work "opened up the important research field of two-dimensional metals" and "represents a major progress in the research field of two-dimensional materials."

Faced with the challenge of how to obtain two-dimensional metals, Zhang Guangyu, a researcher at the Institute of Physics, Chinese Academy of Sciences, led a team to develop the van der Waals extrusion technology for atomic-level manufacturing, achieving the universal preparation of various two-dimensional metals at the atomic limit thickness, including bismuth, tin, lead, indium and gallium. The thickness of these two-dimensional metals is only one millionth of an A4 paper and one 200,000th of the diameter of a hair. If a metal block with a side length of 3 meters is pressed into a single atomic layer thickness, it will be able to cover the entire ground of Beijing.

"The realization of atomically thin two-dimensional metals has added a large piece of the puzzle to the two-dimensional material family, and is expected to give rise to various macroscopic quantum phenomena, promoting the progress of theory, experiments and technology," said Du Luojun, co-corresponding author of the paper and distinguished researcher at the Institute of Physics, Chinese Academy of Sciences.

"Just as three-dimensional metals led the Copper Age, Bronze Age and Iron Age of human civilization, two-dimensional metals with atomic-thickness are expected to promote the development of the next stage of civilization, bringing about technological innovations in many fields such as ultra-micro and low-power transistors, high-frequency devices, transparent displays, ultra-sensitive detection, and extremely efficient catalysis. In addition, van der Waals extrusion technology has also opened up effective atomic-level manufacturing solutions for two-dimensional metal alloys, amorphous and other two-dimensional non-layered materials, and has outlined a beautiful vision for various emerging quantum, electronic and photonic device applications." said Zhang Guangyu, co-corresponding author of the paper and researcher at the Institute of Physics, Chinese Academy of Sciences.

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CGH compensation surface testing technology for high-order SiC aspherical secondary mirror

The full-aperture surface shape measurement of the secondary mirror is a difficult problem in interferometric detection. In order to realize the full-aperture surface shape detection of the coaxial high-order silicon carbide aspheric secondary mirror, a zero-position compensation measurement model based on CGH is proposed. The zero-position compensation design of the 90 mm aperture high-order silicon carbide aspheric secondary mirror is carried out using this model. In the design, in order to reduce the difficulty of adjusting and testing the secondary mirror, the plane wave exit interferometer, CGH and the coaxial high-order silicon carbide aspheric secondary mirror to be tested are used to build the optical path design. From the design analysis, it can be concluded that based on the secondary mirror compensation design method in this paper, the theoretical design accuracy RMS value of its compensation design is 0 nm, which verifies the precision and accuracy of the design method. At the same time, interferometric detection and error analysis were carried out on the secondary mirror. The RMS value of the full-aperture surface shape detection result reached 0.015 λ ( λ =632.8 nm). After calibrating the CGH transmission wave aberration, the RMS value of the full-aperture surface shape detection result was 0.016 λ ( λ =632.8 nm), which further verified the reliability of the method proposed in this paper.

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Professor Yu Linwei's team from Nanjing University developed n-type silicon nanowire memristors based on IPSLS to facilitate high-performance neuromorphic computing


Professor Yu Linwei's team at Nanjing University successfully developed an n-type silicon nanowire (n-SiNW) memristor based on in-plane solid-liquid-solid (IPSLS) growth. The innovative contact structure of "nanowire-edge" quasi-one-dimensional crossover 1D-crossing precisely controlled the formation process of conductive filaments at the nanoscale, achieving ultra-low power consumption, ultra-fast response and high uniformity of neuromorphic computing hardware. This research achievement provides a new hardware support for large-scale brain-like computing and demonstrates excellent performance in binary tumor recognition applications.

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