Chinese semiconductor thread II

[GiantPanda]

‘Changing lanes’: China heralds fastest-ever chip technology – without silicon​

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The researchers, led by physical chemistry professor Peng Hailin, said their self-engineered 2D transistor could operate 40 per cent faster than Intel and TSMC’s cutting-edge

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, while consuming 10 per cent less energy.
“It is the fastest, most efficient transistor ever,” according to an official statement published last week on the PKU website.

This is real and is printed in Nature:

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From SCMP -- they are already able to produce in the thousands in a lab setting! This will blow everything WAY out of the water including whatever process they come up with ASML/TSMC.

“While existing GPUs and CPUs run at around 2 to 3 GHz, our team has achieved a clock speed of more than 100 GHz. This means that we can calculate more in a shorter time, providing stronger computing power for the development of artificial intelligence.”

The team said they could produce thousands of identical chips on 20cm (8-inch) wafers, while they continued to work on resolving stability issues and optimising packaging processes, according to the MIT Technology Review China.

Obviously, packaging these into mass produced every day products would probably require brand new design of products that can take photonic instead of silicon chips.

A HPC will probably be the first use of these chips as oppose to a mobile device.

 

[OptimusLion]

Zhanxin Electronics launches 1200V SiC half-bridge 1B package module to facilitate high-frequency and high-efficiency applications

Zhanxin Electronics launched the 1B packaged 1200V 9mΩ silicon carbide (SiC) half-bridge power module (IV1B12009HA2L), which provides efficient and low-cost solutions for photovoltaic, energy storage and charging pile applications. The product has passed industrial-grade reliability testing.

The size of this module product (IV1B12009HA2L) is the same as the standard Easy 1B package, and its shell is compact with a height of only 12mm. The internal chip of the module is arranged on a ceramic copper-clad substrate (DCB), which has an internal insulation function and can be directly attached to the heat sink without the need for an external ceramic insulating gasket. It is safe and reliable, and has better heat dissipation. At the same time, the module adopts a spring mounting seat, which is easy to assemble, and the integrated mounting clip makes the installation firm.

Module circuit topology

The module product has a built-in 1200V 9mΩ SiC MOSFET chip to form a half-bridge circuit, which has low stray inductance, simplifies the design of the application circuit, and improves the power density compared to discrete device solutions. At the same time, it integrates a thermistor (NTC) to monitor the temperature.

This product has a Kelvin source pin, which can suppress the driving voltage spike when the SiC MOSFET switches at high speed, ensuring the safety and reliability of high-frequency switching applications.

SiC MOSFET Chip

This module uses Zhanxin Electronics' second-generation planar gate 1200V SiC MOSFET chip, which has good performance and reliability, supports +15V to +18V turn-on voltage and -3.5V to -2V turn-off voltage, and has a rated current of 100A.

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[OptimusLion]

The Institute of Semiconductors of the Chinese Academy of Sciences and others have made important progress in the theory and experiment of Raman scattering of layered semiconductor materials


Recently, the team led by Researcher Pingheng Tan from the Institute of Semiconductors, Chinese Academy of Sciences, used the ultra-low wavenumber and ultra-high spectral resolution Raman spectroscopy technology developed with a wavelength as low as 2 cm -1 to study the interlayer breathing phonon modes of thicker layered semiconductor materials (such as WS 2 , MoS 2 , MoSe 2 and MoTe 2 , etc.). The study found that when the excitation light resonates with the C exciton energy of the layered semiconductor material, the traditional Raman forbidden even-branched interlayer breathing phonon mode was observed experimentally, and its intensity was modulated by the material thickness, the wavelength of the excitation light, and the refractive index mismatch between the material and the substrate. These experimental results cannot be explained by the theoretical framework based on the electric dipole approximation. Due to the complexity of the electronic band structure of the system, it is also difficult to analyze the high-order terms of the multi-level expansion of the interaction matrix element of the Raman scattering theory and to qualitatively explain the experimental results.

In fact, the atomic displacement field of the interlayer breathing mode of layered semiconductor materials forms a standing wave along the out-of-plane c-axis direction, making the layered semiconductor material a natural phonon cavity. As the thickness of the layered semiconductor material increases, the standing wave vector of its phonon cavity may be comparable to the photon wave vector. This makes the premise of the electric dipole approximation theory proposed by R. Loudon no longer valid, destroying the Raman selection rule determined based on the electric dipole approximation, so that the even-branched interlayer breathing phonon mode that is traditionally Raman forbidden is observed experimentally. Layered semiconductor materials are also natural optical cavities. The excitation light and Raman signals are reflected and refracted multiple times on the upper and lower surfaces of the material, causing the light field intensity to be redistributed spatially along the c-axis. The combined effect of the above phonon cavity and optical cavity effects leads to spatially modulated photon-electron interaction and electron-phonon interaction, so that the intensity of the interlayer breathing phonon mode is modulated by the material thickness, the excitation light wavelength, and the refractive index mismatch between the material and the substrate.

Based on the above theory, the authors further proposed a photon-phonon coupling spatial coherence model including spatially modulated photon-electron and electron-phonon interactions, which systematically considered the matching degree between the phonon cavity standing wave vector and the photon wave vector, as well as the spatially modulated interference enhancement and interference destructive effects of the forward and backward propagation components of the photon-electron interaction and electron-phonon interaction in the optical cavity. This model can quantitatively explain the dependence of the intensity of the Raman forbidden phonon mode of layered semiconductor materials on its material thickness (as shown in the figure), the wavelength of the excitation light, and the substrate.

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[OptimusLion]

Neijiang High-tech Zone signs a batch of projects

On March 10, Neijiang High-tech Zone held a signing ceremony for investment promotion projects, and signed three high-tech industry projects on the spot with a total investment of 1.6 billion yuan.

The projects at the signing ceremony involved the research and development and manufacturing of high-end semiconductor equipment components, laser cutting equipment, and advanced packaging equipment, filling the gap in Neijiang High-tech Zone in the field of semiconductor front-end process equipment, and improving and extending the back-end process equipment chain. It will inject strong impetus into Neijiang's development of a characteristic industry of semiconductor complete sets of equipment.

The three companies that signed cooperation agreements with Neijiang High-tech Zone to promote the "circle building and chain strengthening" of the semiconductor industry are Henan Dongwei Electronic Materials Co., Ltd., Jiaxing Jingyan Intelligent Equipment Technology Co., Ltd., and Suzhou Leiming Laser Technology Co., Ltd., all of which are leading companies in the field of semiconductor equipment and packaging and testing equipment manufacturing. All three projects belong to the core links of the semiconductor industry chain (materials, equipment, packaging and testing), and have significant connections with the existing electronic information companies in Neijiang High-tech Zone in terms of material supply, equipment matching, and technical collaboration. Through the integration of the industrial chain, a closed loop of "semiconductor materials-equipment manufacturing-packaging and testing-intelligent manufacturing" can be formed to enhance the competitiveness of regional industrial clusters.

Henan Dongwei Microelectronic Materials Co., Ltd. is a national key "little giant" enterprise specializing in special and new technologies, and is also a quasi-unicorn enterprise. The company is committed to becoming a one-stop service platform for materials and equipment components for high-end integrated circuit manufacturing. It will establish a southwest business headquarters company in Neijiang High-tech Zone and build a new semiconductor equipment R&D and manufacturing base.

Jiaxing Jingyan Intelligent Equipment Technology Co., Ltd. is also a national-level specialized and innovative "little giant" enterprise. The company has always focused on the research and development, manufacturing and technical services of advanced integrated circuit packaging equipment, and will build an advanced packaging bonding equipment production line in Neijiang High-tech Zone.

Suzhou Radium Laser Technology Co., Ltd. is a "National High-tech Enterprise", "Jiangsu Province Specialized Small and Medium-sized Enterprise", and "Suzhou Unicorn Cultivation Enterprise". The company mainly engages in the research and development, production and sales of various high-end industrial application ultra-precision laser equipment, mainly laser cutting equipment, which is used in semiconductor packaging, Micro Led chip manufacturing and other related processing fields. It will invest in the construction of a semiconductor high-end equipment manufacturing and wafer processing operation base in Neijiang High-tech Zone.

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[OptimusLion]

Kong Wei's team from the School of Engineering at Westlake University proposed a single crystal homoepitaxial method for the β-Ga₂O₃ (100) surface


Researcher Kong Wei from the Future Industry Research Center and the School of Engineering of Westlake University has developed a new method to achieve single-crystal homoepitaxial growth on a β-Ga₂O₃ (100) surface without beveled substrate for the first time, demonstrating the huge application potential in β-Ga₂O₃-based power devices. The related work was published in Advanced Science under the title " Single-Crystalline β-Ga 2 O 3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate ".

Kong Wei's team from the School of Engineering at Westlake University successfully achieved single-crystal epitaxial growth of β-Ga₂O₃ on a (100) substrate for the first time using a van der Waals- like epitaxy method . By introducing excess indium (In) as a surfactant and promoting unstable twin decomposition under growth conditions with a high Ga/O ratio , the surface diffusion length of Ga atoms was significantly increased. These unconventional conditions promoted single-oriented nucleation and lateral growth and merging along the steps , forming a single-crystal β-Ga₂O₃ film with an atomically flat surface in a layer-by-layer growth mode. This method effectively utilizes the cost advantage of large -size wafers of this material system and provides a promising path for the development of high-performance devices based on β-Ga₂O₃ (100) surface epitaxial wafers .

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[OptimusLion]

With a total investment of 1.38 billion yuan, the second phase of Zhongjuxin Central China Base and the electronic grade sulfuric acid quality improvement and capacity expansion project started

The second phase of the Zhongjuxin Central China Base and the electronic grade sulfuric acid quality improvement and capacity expansion project started in Qianjiang City, Hubei Province. The project covers an area of 30 acres and will expand the electronic grade sulfuric acid production capacity of the Central China Base from 40,000 tons/year to 60,000 tons/year. The project is scheduled to be completed by the end of 2025 and put into production in March 2026.

According to Hubei Industry and Information Technology, the total investment of the Zhongjuxin Central China Base project is 1.38 billion yuan, and it is located in Qianjiang Microelectronics Materials Industrial Park. The project uses sulfuric acid, hydrochloric acid, hydrogen and other by-products produced by the surrounding Jianghan Salt Chemical Industrial Park as raw materials, and processes them into electronic-grade sulfuric acid, electronic-grade ammonia water, electronic-grade hydrofluoric acid, high-purity chlorine and other products for the manufacture of integrated circuits. After all are completed and put into production, the output value can reach 1.2 billion yuan. At present, the first phase of the 52,500-ton ultra-pure electronic chemicals project was officially put into production on February 18, 2023.

At present, with the growth of strategic emerging semiconductor industries such as integrated circuits and flat panel displays, the market demand for electronic-grade sulfuric acid continues to rise, and the industry's quality requirements for electronic-grade sulfuric acid are becoming higher. The second phase of the ultra-pure electronic chemicals project and the electronic-grade sulfuric acid quality improvement and capacity expansion project will mainly achieve the expansion of the electronic-grade sulfuric acid production capacity of the Central China base from 40,000 tons/year to 60,000 tons/year, and further improve product quality to continuously ensure the leading edge of the product and meet future market demand.

It is reported that Qianjiang focuses on the recycling of Jianghan Salt Chemical Industry's by-products, and promotes the agglomeration and development of leading companies in the electrical materials industry such as Changfei Optical Fiber, New Silicon Technology, Zhongjuxin, Dinglong, Jingrui, and Beixu. It focuses on domestic substitution of electronic special gases, photoresists, polishing fluids, etching fluids and other materials, serves leading companies such as BOE and Huaxing Optoelectronics, and builds a supporting base for Wuhan's optoelectronic information industry.

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[OptimusLion]

CATL enters the chip market and leads investment in domestic IC design company Silang Technology

Contemporary Amperex Technology Co., Ltd. (CATL), a global leader in batteries and energy storage, is further expanding into the semiconductor field. Recently, CATL Capital, the only industrial investment platform under CATL, led the D round of financing for Silang Technology, followed by SMIC Capital.

This latest investment is the third time that CATL has invested in an IC design startup. Previously, CATL also directly invested in Horizon Robotics, Hangzhou Xinmai Semiconductor, etc. At the same time, CATL has indirectly invested in a number of semiconductor companies through equity participation funds.

According to information, Silang Technology was founded in 2016. The team was born out of the Institute of Automation of the Chinese Academy of Sciences. Its founder Wang Donglin was once the director of the institute. It is a high-tech semiconductor unicorn company dedicated to the research and development of domestic independent processor cores, chip design and applications.

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[OptimusLion]

Tower Semiconductor and Innolight Expand Collaboration to Scale Next-Generation Silicon Photonics Solutions to Meet AI and Data Center Market Demands

Recently, Tower Semiconductor, a high-value analog semiconductor solution foundry, and Innolight announced that the two parties will expand their cooperation using Tower's latest silicon photonics (SiPho) platform, which is currently in mass production. This breakthrough technology greatly reduces the number of external optical components, reduces the number of lasers required for each module by half, simplifies the design of optical modules, reduces the cost of AI and data center applications, and improves supply chain efficiency.

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[gk1713]

Saw some pic shows Huawei Ren Zhengfei purged 100+ ppl of storage department today due to cheating in recruitment.

 

[OptimusLion]

New Micro Semiconductor Announces Launch of 650V E-mode GaN Power Process Foundry Platform

Shanghai Xinwei Semiconductor Co., Ltd. ("Xinwei Semiconductor") officially launched a 650V silicon-based GaN enhanced-mode (E-mode) power process foundry platform. With its excellent characteristics such as high-frequency operation efficiency, ultra-low gate charge and low on-resistance, the platform provides an excellent solution for the application of a new generation of high-speed and high-efficiency power devices. Products manufactured based on this process platform can be widely used in consumer electronics, industrial automation, data centers, new energy vehicles and other fields, showing strong market potential.

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