More Chinese companies are getting into the lithography maintenance business.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
Shanxi CETC successfully delivered third-generation horizontal silicon carbide chemical vapor deposition equipment
The equipment shipped this time is the third-generation horizontal silicon carbide chemical vapor deposition equipment developed by Shanxi China Electronics Technology Co., Ltd. with a new design concept . Its structural design and process technology are independently developed by the company. The equipment adopts a high-precision temperature control system, which can accurately control the temperature difference of the graphite substrate within 1°C to ensure the stability of the process; the CFD numerical simulation technology is used to optimize and adjust the equipment structure and process parameters, effectively improving production quality and efficiency.
After many times of process optimization and debugging, the equipment can successfully achieve a purity of coated products ≥ 99.9999%, a thickness of silicon carbide coated products of 100μm±10%, and key technical indicators such as main crystal form, crystal orientation, and hardness have reached the domestic leading level .
The equipment shipped this time is the third-generation horizontal silicon carbide chemical vapor deposition equipment developed by Shanxi China Electronics Technology Co., Ltd. with a new design concept . Its structural design and process technology are independently developed by the company. The equipment adopts a high-precision temperature control system, which can accurately control the temperature difference of the graphite substrate within 1°C to ensure the stability of the process; the CFD numerical simulation technology is used to optimize and adjust the equipment structure and process parameters, effectively improving production quality and efficiency.
After many times of process optimization and debugging, the equipment can successfully achieve a purity of coated products ≥ 99.9999%, a thickness of silicon carbide coated products of 100μm±10%, and key technical indicators such as main crystal form, crystal orientation, and hardness have reached the domestic leading level .
btw, I posted this in AI thread, but worth using this to rebut Trump admin here
Just 1 new Ascend cloud cluster alone has 160,000 cards with 432 CM384 super nodes -> works out to be 129 EFLOPS. So, I think 200k is a huge underestimation.
On that x90 article.
iirc, the original n+2 was 42nm so this is a little improvement to 40nm. I don’t quite remember the other figures though.
this does match what hvpc said to me a year ago that SMIC was doing 40nm first.
iirc, the original n+2 was 42nm so this is a little improvement to 40nm. I don’t quite remember the other figures though.
this does match what hvpc said to me a year ago that SMIC was doing 40nm first.