Chinese semiconductor thread II

tokenanalyst

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UV-LED are replacing Mercury lamps in lithography applications with the same performance in some cases but more energy efficient, cheaper, longer lifetime and less complex power electronics.

Zhongtewei is a provider of intelligent high-speed lithography equipment. It focuses on providing fully automatic ultraviolet lithography equipment and technical solutions for wafer processing plants and solar cell processing plants, and has formed a series of products such as UVLED parallel light source modules, fully automatic proximity lithography machines, semi-automatic double-sided lithography machines and photovoltaic copper electroplating exposure machines, which have been applied to listed companies such as Sanan Optoelectronics, Shenzhen MTC and Huacan Optoelectronics.

The core technology group comes from Chongqing Green Intelligent Technology Research Institute. Our company has successfully launched various special proximity lithography machines by conquering UVLED multi-free surface precise light distribution technology, adaptive finite time anti-interference control visual closed-loop servo system, and dual-field closed-loop skeleton matching visual alignment algorithm. The exposure size covers 1/2/4/6/8/12-inch wafers and square pieces, with a production capacity of 140WPH, an overlay accuracy of ±0.5um, and provides a smart factory compatible interface. According to customer needs, product customization can be achieved to meet different application scenarios, such as semiconductor or photovoltaic exposure fields.

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tokenanalyst

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Enhanced Damage Resistance of Mo/Si Multilayer Mirror with Carbon Barrier Layers under Intense Nanosecond EUV Irradiation.​

Abstract​


The enhancement of damage-resistance capabilities has long been pursued for the development of multilayer mirrors in the field of extreme ultraviolet lithography. Here, single-shot damage experiments were conducted on periodic Mo/Si and Mo/C/Si/C multilayers using nanosecond 13.5 nm EUV radiation. It is revealed that the incorporation of carbon barrier layers significantly enhances the single-shot damage threshold of Mo/Si by about 46%. The crater-like and bump-like damages caused by compaction and expansion are, respectively, observed for Mo/Si and Mo/C/Si/C multilayers. According to characterization results, different damage mechanisms for these two samples have been identified, which are the diffusion reaction for the Mo/Si multilayer and the nonuniform graphitization for the Mo/C/Si/C multilayer. The nonuniform graphitization mechanism is further illustrated by molecular dynamics simulations. Based on the measured multilayer structure, the optical properties of the damaged Mo/C/Si/C multilayer were evaluated at a fluence of 2.68 J/cm2 and found to be maintained at a high level.
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tokenanalyst

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Accuracy improvement of focusing and leveling sensors based on pupil phase modulation.​

School of Electronic Information and Electrical Engineering.
Shanghai Micro Electronics Equipment (Group) Co., Ltd.,
Shanghai Key Laboratory of Lithographic Optics and Inspection
State Key Laboratory of Extreme Photonics and Instrumentation Zhejiang University.

Abstract​

The focusing and leveling sensor (FLS) is crucial for achieving high-accuracy vertical measurements in lithography systems. To improve the vertical measurement accuracy of FLS in multilayer processes, this study explores the feasibility of reducing vertical measurement errors through pupil phase modulation, leveraging the Abbe imaging model and point spread function (PSF) engineering. Two approaches are proposed: installing phase-complementary optical path modulators (OPMs) or spiral phase plates (SPPs) into the optical path. A simulation model is built and experimentally validated, showing consistency in vertical measurement errors between simulations and experiments. The results indicate that when the spatial frequency of wafer surface reflectance due to process variation is 2.5 cycles/mm, introducing complementary OPMs or SSPs can reduce vertical measurement errors by approximately 92.3% and 81.2%, respectively. This demonstrates that both modulation methods effectively reduce vertical measurement errors, thereby improving the measurement accuracy of FLS. These methods offer significant insights for increasing process tolerance and improving the measurement accuracy of FLS in lithographic processes.

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Wrought

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DRAM production from CXMT is ramping up much faster than expected, as per Korean sources.

Chinese memory semiconductor leader Changxin Memory Technologies (CXMT) is expected to greatly increase its DRAM production capacity this year, exceeding initial forecasts. If this trend continues, CXMT's DRAM production is likely to closely pursue U.S. Micron, reaching about half the level of SK hynix, according to analysis. There are also predictions that within 1 to 2 years, the DRAM market will be reshaped from a three-player structure to a four-player structure, alongside a full-blown oversupply.

According to the latest statistics from market research firm Omdia on the 18th, Chinese CXMT is projected to increase its DRAM production capacity from 1.62 million units last year to 2.73 million units this year, representing a 68% increase. Previously, the market had anticipated that CXMT's DRAM production capacity would increase by about 20% this year, but it is expected to expand more than three times faster than that. CXMT is also expected to increase its share of both legacy DRAM DDR4 and DDR5.

Until the first quarter of last year, CXMT's average monthly DRAM production was only about 100,000 units, which was one-fourth of SK hynix’s production. Moreover, most of the products were DDR4 DRAM. However, in the first quarter of this year, it produced an average of 200,000 units per month, doubling from last year, with expectations for production to expand to approximately 300,000 units next year.

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european_guy

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Tech war: founder of Chinese semiconductor equipment maker AMEC renounces US citizenship​


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The founder, chairman and chief executive of Shanghai-based Advanced Micro-Fabrication Equipment (AMEC), Gerald Yin Zheyao, has renounced his United States citizenship and restored his Chinese nationality

He is 81 years old, maybe he wants (in a hopefully distant future) to leave as he was borne.
 
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