Chinese semiconductor thread II

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China first 100nm high-performance GaN tape-out PDK platform

Jiufengshan Laboratory released the first 100nm silicon-based gallium nitride commercial process design kit (PDK) in China, with performance indicators reaching the domestic leading and world-class level. As the world's second and China's first commercial solution, its technical indicators can support high-throughput Ku/Ka band low-orbit satellite communications, and can meet the needs of next-generation mobile communications, commercial satellite communications and aerospace, Internet of Vehicles and Industrial Internet of Things, mobile terminals and other fields for high-frequency, high-power, and high-efficiency gallium nitride devices, and promote the devices in related fields in my country from "import substitution" to "technology output".

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A reflective mask and preparation method thereof​

CN119291984A

Abstract​

The present invention relates to the technical field of semiconductor devices, and in particular to a reflective mask and a preparation method thereof. The reflective mask provided by the present invention comprises a substrate, a reflective stack, and a patterned absorption layer, wherein the absorption layer comprises a ruthenium absorption layer and a tantalum absorption layer located below the ruthenium absorption layer; and the thickness D of the ruthenium absorption layer satisfies: D=mλ/2ncosθ; wherein m is a positive integer, λ represents the wavelength of the light source, n represents the refractive index of the ruthenium material, and θ represents the incident angle of the light beam from the ruthenium absorption layer to the tantalum absorption layer. The reflective mask provided by the present invention can increase the grayscale ratio between the light beam reflected by the mask and the light beam absorbed, thereby improving the photolithography quality of the mask. The present invention also provides a preparation method for the above-mentioned reflective mask.​

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Henan Dongwei Electronic Materials Co., Ltd. was established in the Aviation Port Experimental Zone of Zhengzhou City, Henan Province in 2018, and has established R&D and production bases in Shanghai, Beijing, Wuxi, Xiamen, etc. The company is committed to becoming a one-stop service platform for materials and equipment parts for high-end integrated circuit manufacturing, solving the "bottleneck" problem for China's semiconductors.
● The company has seized the historical opportunity of integrated circuits through a development strategy that combines internal growth with external mergers and acquisitions, and has achieved double-digit growth in performance for many consecutive years. The company's business consists of three major sectors: semiconductor core materials, semiconductor equipment, and core components. The company produces and sells products such as sputtering targets, reaction chambers, and other semiconductor components. The company is also continuing to actively seek excellent merger targets and partners to further enrich its product lines in the future.
● In August 2022, relying on its advantages in technology, market position, and development potential in the semiconductor field, the company passed the 2022 national-level specialized and new "Little Giant" enterprise certification, a quasi-unicorn enterprise, and won the 2022 China Innovation and Entrepreneurship Competition Henan Division Champion. In 2023, it won the Excellence Award in the National Disruptive Technology Innovation Competition. In 2024, it was approved as a national-level specialized and new key "Little Giant" enterprise, and won the second prize in the enterprise group of the 9th "Maker China" Henan Small and Medium Enterprises Innovation and Entrepreneurship Competition.​
 

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Feikai Materials: Material innovation helps AI chips to develop steadily and achieve long-term development.


Feikai Materials will continue to increase investment in product R&D, establish close cooperative relations with universities and research institutions, and jointly carry out cutting-edge technology research. At the same time, he also pointed out that the company will continue to develop packaging materials that can meet low stress, high thermal conductivity, and high reliability.

In addition to follow-up on research and development, a stable supply of production capacity is also crucial. In the semiconductor industry, technological advances and market demand changes are very rapid, and customers have extremely high requirements for material demand and delivery cycle. "This year, we plan to build a new semiconductor material production base 'Suzhou Kaixin' in Suzhou. The construction of this new base will significantly increase the company's semiconductor material production capacity and better support the development of the industry." Lu Chun said that the base is expected to start construction in the first quarter of this year and is scheduled to be put into production by the end of 2026. The new base will add 30,000 tons of annual production capacity, mainly producing ultra-high purity solvents, semiconductor wet process chemicals, and key materials such as photoresists.

In the semiconductor materials industry, collaboration between upstream and downstream industries has always been a key factor in promoting business development. Lu Chun said, "In-depth cooperation with chip design companies and packaging and testing companies can help us grasp market demand in advance, ensure the accuracy of R&D direction, and improve the quality and production efficiency of packaging processes." He also pointed out, "Through close communication with customers, we can ensure that our products accurately match market demand and adjust product strategies and service solutions in a timely manner based on customer feedback. This efficient partnership is the key to our advantage in the fiercely competitive market."
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Products.

Wafer manufacturing:

Feikai Materials provides a variety of high-purity solvents in the field of integrated circuit manufacturing, which can be used in photoresist edge washing, etching and post-cleaning processes for 12-inch wafer manufacturing. In addition, the company provides customized product services and can develop various high-purity reagents according to the different needs of different customers.
Feikai Material's DUV bottom anti-reflection layer material(BARC), with appropriate thickness, can reduce the reflectivity of Al, Cu, W, GaAs and other substrates to less than 1%; it has good gap-filling ability to expand the process window and is suitable for various KrF lithography processes.
Feikai Material KX series G/H/I line universal high-resolution positive photoresist is suitable for various near-ultraviolet high-resolution step-and-scan lithography equipment. Select the appropriate spin coating steps and lithography process, and it can be customized according to customer needs.

Wafer Level Packaging:

Feikai Materials has strong independent innovation and R&D capabilities, and has developed KX5* series, KX1* series, and KX4* series photoresists for IC packaging to meet the different needs of various high-tech manufacturing customers.
In the wafer-level packaging process, Feikai Materials can provide a wide variety of electroplating products, including copper electroplating solution, silver electroplating solution, gold electroplating solution, tin electroplating solution, nickel electroplating solution and supporting materials.
Aiming at the different needs of IC packaging and various high-tech manufacturing customers, Feikai Materials has developed a series of wet process electronic chemicals, mainly including developers, degumming solutions, etching solutions, cleaning solutions, etc. In addition, the company has independent innovative R&D capabilities and can provide customized products according to the different needs of different customers.
In response to the application of temporary bonding processes in current semiconductor manufacturing, Feikai Materials has developed a complete temporary bonding solution that includes bonding glue, photosensitive glue, and cleaning fluid. This solution supports thermal disassembly, mechanical disassembly, and laser disassembly, and the product has excellent stability and safety.

Chip Level Packaging:

Feikai Materials has developed a series of solder ball products for different melting points and different application fields, with ball diameters ranging from 0.05mm to 1.80mm, which are widely used in advanced packaging fields such as BGA, Filp-Chip, CSP, WLCSP, MEMS, etc. The main products include low-temperature solder balls (95-135℃), high-temperature solder balls (186-309℃), Ultra Low Alpha tin alloy microspheres, etc.
Feikai Materials' epoxy molding compound (EMC) is mainly used in the packaging of integrated circuits, power devices, surface mount discrete devices, photovoltaic modules, intelligent power modules IPM, and automotive power modules IPM. Mid-to-high-end packaging epoxy molding compounds are gradually transforming from traditional surface mount IC SOP/SSOP, QFP, QFN products to advanced substrate packaging BGA and MUF. The product has the characteristics of low warpage, low water absorption, and high reliability.
The new solder paste RCP is a solid crystal solder paste developed for the COB&MiP&COG printing process of Mini LED. It has good printability and demolding properties under fine pitch pad size (P0.3 and above), very little residue after reflow soldering, no cleaning required, non-corrosive, and good tin polymerization performance, which can meet the high-precision and high-reliability conductive parameter requirements.​
Feikai Material's flux is mainly used in the ball implantation process in advanced packaging processes. The product has good wettability to different wafers or substrates; good cleanability after high-temperature reflow, no residue after water washing; small weight change after heating, less dirt in the reflow furnace; weak corrosion, less voids, high reliability.

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Moiré fringe-based alignment is a absolutely key for NanoImprint Lithography becoming a viable solution in IC mass production​

DOF Enhanced via the Multi-Wavelength Method for the Moiré Fringe-Based Alignment.​

Abstract​

Alignment systems are core subsystems of lithography, which directly affect the overlay accuracy of the lithography process. The Moiré fringe-based alignment method has the advantages of high precision and low complexity. However, the precision of this method is highly sensitive to variations in the gap between the wafer and the mask. To enhance the performance of Moiré fringe-based alignment, this paper proposes a novel method in which the multi-wavelength approach is used to enhance the imaging depth of focus (DOF). We use a multi-wavelength light to illuminate the alignment marks on the wafer and mask, which is combined with different sources. Then, we use the improved phase analysis algorithm to analyze the contrast of the Moiré fringe and calculate the Moiré fringe displacement. Experiments show that, in an alignment range of 1000 μm, the effective DOF can exceed 400 μm. It is evidenced that the accuracy of the Moiré fringe alignment is unaffected and remains at the nanometer level. Otherwise, with parameter optimization, the alignment DOF is expected to be further extended.
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As lithography resolution improves, many new lithography techniques have emerged, such as nanoimprint lithography (NIL) [13,14] and electron beam lithography (EBL) [15], which offer advantages of high resolution and low cost in specific application areas. Compared to traditional lithography methods, NIL requires the mask to be in complete contact with the wafer for pattern transfer. As a result, there is a large variation in the gap between the mask and the wafer during the imprinting process. The Moiré fringe alignment method relies on detecting the interference signal formed by the superposition of two diffraction gratings with slightly different periods. The intensity and phase accuracy of the Moiré fringe signal collected at the receiving end can be easily affected by changes in the gap between the wafer and the mask. Moel et al. [16] introduced a coaxial interference alignment method, referred to as Coaxial Interference Alignment (OAI). This method uses a broad-spectrum light source to illuminate alignment markers, generating Moiré fringes for measuring alignment in multiple directions. It helps mitigate the impact of gap variations between the mask and the wafer on the fringe phase. However, the broad-spectrum light source has poor coherence, and after frequency-domain filtering, the contrast of the Moiré fringe signal becomes low, which increases the difficulty of phase analysis.

Based on the work and challenges addressed by the aforementioned teams, we propose a multi-wavelength controlled Moiré fringe alignment method. This method utilizes the principle that the Talbot self-imaging field positions differ when light sources of different wavelengths pass through a grating. Combining these diffraction fields effectively compensates for the dark field of a single wavelength, thereby generating a continuous intensity distribution. This method overcomes the issues of low contrast and shallow depth of field inherent in traditional Moiré fringes. Simulation and experimental results demonstrate the feasibility of this solution.​

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2800W high brightness diode laser module targeting next generation fiber laser pump​


Abstract
Xinghan Laser Technology Co., Ltd. (China)
This study presents a high-power diode laser (DL) pump module with 2800W optical power output through a 300μm core-diameter optical fiber. This module uses the latest generation of high-power 9XX laser diodes, and the optical design was optimized to improve the coupling efficiency. The brightness and power are scaled thorough wavelength combining two beams of 915nm and 976nm. It outputs 2800W @ 50A optical power in continuous mode, with power ratio of numerical aperture 0.19/0.22 >95%. The output characteristics of this module under pulsed modulation mode have also been tested, outputting 3700W @ 60A in pulsed mode (1kHZ, 10% duty cycle). This module can enable a fiber-combiner free 2000W fiber laser pump solution. Considering that the fiber output brightness reaches 26MW/cm2*sr, it can also be applied to direct diode laser applications such as welding, laser edge sealing, and heat treatment.​

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Professor Zhou Peng of Fudan University: High-performance storage and computing integrated chip based on new non-volatile memory

Zhou Peng, Professor at Fudan University. He is committed to the innovative research of advanced electronic devices, and has achieved high area efficiency single transistor logic, low leakage, low SS MBCFET, and invented silicon-based two-dimensional heterogeneous integrated CFET technology; the floating gate memory he proposed has an ultra-fast write speed of 10 ns and a lifespan of more than 8 million times; he developed a "all-in-one" functional device using positive and negative photoconductivity storage to achieve motion image detection.

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