Chinese semiconductor thread II

OptimusLion

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Li Xinghui's team at Tsinghua Shenzhen International Graduate School has made new progress in the field of global alignment of interferometric lithography

Li Xinghui's team from Tsinghua University Shenzhen International Graduate School proposed an interference lithography splicing exposure method and system based on global alignment of reference gratings, which provided thoughts and references for aperture expansion in diffraction grating manufacturing. The relevant research results were published in Microsystems & Nanoengineering on March 4 under the title of "Global Alignment Reference Strategy for Laser Interference Lithography Pattern Arrays".


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OptimusLion

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The Chinese Academy of Sciences has developed an all-optically controlled five-state logic gate device on the surface of a single ferroelectric ceramic wafer

Yi Zhiguo, a researcher at the Shanghai Institute of Ceramics, Chinese Academy of Sciences, has made progress in the research of multifunctional integrated ferroelectric optoelectronic logic devices. The team used the co-firing technology of mixing metal Ti powder with 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) ceramic powder to prepare Ti3+ self-doped BZT-BCT ceramic wafers. This ceramic wafer has both obvious photovoltaic response and photo-induced pyroelectric response. The sample BZT-BCT-3T with a Ti powder content of 3% has an optoelectronic performance that is about 2.5 times higher than that of pure BZT-BCT ceramics.

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OptimusLion

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Compact narrow-linewidth solid-state 193-nm pulsed laser source utilizing an optical parametric amplifier and its vortex beam generation

Deep ultraviolet coherent light, particularly at the wavelength of 193 nm, has become indispensable for semiconductor lithography. We present a compact solid-state nanosecond pulsed laser system capable of generating 193-nm coherent light at the repetition rate of 6 kHz. One part of the 1030-nm laser from the home-made Yb:YAG crystal amplifier is divided to generate 258 nm laser (1.2 W) by fourth-harmonic generation, and the rest is used to pump an optical parametric amplifier producing 1553 nm laser (700 mW). Frequency mixing of these beams in cascaded LiB3O5 crystals yields a 193-nm laser with 70-mW average power and a linewidth of less than 880 MHz. By introducing a spiral phase plate to the 1553-nm beam before frequency mixing, we generate a vortex beam carrying orbital angular momentum. This is, to our knowledge, the first demonstration of a 193-nm vortex beam generated from a solid-state laser. Such a beam could be valuable for seeding hybrid ArF excimer lasers and has potential applications in wafer processing and defect inspection.

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tokenanalyst

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Tengjing Technology will achieve revenue of 445 million yuan in 2024, with net profit increasing by 66.53% year-on-year​

Tengjing Technology released its 2024 annual performance report, stating that during the reporting period, the company achieved total operating revenue of 445.1407 million yuan, an increase of 30.96% over the same period last year; net profit attributable to the parent company's owners was 69.3682 million yuan, an increase of 66.53% over the same period last year; net profit attributable to the parent company's owners after deducting non-recurring gains and losses was 66.3563 million yuan, an increase of 82.20% over the same period last year; basic earnings per share and diluted earnings per share were 0.54 yuan, an increase of 68.75% over the same period last year.

The main business income was classified by product category, among which the precision optical components business achieved income of RMB 355.1483 million, a year-on-year increase of 25.45%; the optical fiber device business achieved income of RMB 76.0636 million, a year-on-year increase of 34.61%; the optical testing instrument business achieved income of RMB 13.0739 million (mainly due to the inclusion of GouMax in the company's consolidated financial statements during the reporting period).

The main business income is classified by the main application fields of the products. Among them, the optical communication field achieved revenue of RMB 223.2575 million, an increase of 83.46% year-on-year; the fiber laser field achieved revenue of RMB 158.5877 million, a decrease of 13.77% year-on-year; the emerging application fields such as scientific research, biomedicine, consumer optics, semiconductor equipment, etc. achieved a total revenue of RMB 62.4406 million, an increase of 83.62% year-on-year.

At the end of the reporting period, the company's total assets were RMB 1,299,206,000, an increase of 19.55% from the beginning of the reporting period; owners' equity attributable to the parent company was RMB 921,357,400, an increase of 2.06% from the beginning of the reporting period; net assets per share attributable to the parent company's owners were RMB 7.12, an increase of 2.01% from the beginning of the reporting period.

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tokenanalyst

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Shandong Jinggai applied for a patent for a UV-photocatalytically assisted GaN wafer polishing method, which improved the polishing efficiency of GaN wafers​


Information from the National Intellectual Property Administration shows that Shandong Jinggai Semiconductor Co., Ltd. has applied for a patent titled "A method for polishing gallium nitride wafers assisted by ultraviolet photocatalysis", publication number CN 119635419 A, and application date December 2024.

The patent abstract shows that the present invention belongs to the field of semiconductor manufacturing technology, and in particular, relates to a method for polishing gallium nitride wafers assisted by ultraviolet photocatalysis, which includes the following steps: S1, fixing the gallium nitride wafer after grinding and washing on the fixture of the polishing machine; S2, vacuumizing the sealed cabin of the polishing machine until the vacuum degree reaches the set vacuum degree threshold, and then filling the sealed cabin with oxygen until the pressure value of the oxygen in the sealed cabin reaches the set pressure threshold; S3, turning on the ultraviolet lamp and the heater, the ultraviolet lamp irradiates the polishing liquid, the heater heats the polishing liquid to the set temperature and maintains the temperature constant, and then starting the polishing machine to polish the gallium nitride wafer; S4, cleaning the gallium nitride wafer after polishing. This method improves the oxidation rate, thereby improving the polishing efficiency of gallium nitride wafers.

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tokenanalyst

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HVPE growth device and method​


summary
The present invention provides an HVPE growth device and method, including a metal gallium supply system, an intermediate product supply system and a crystal growth system, the metal gallium supply system includes a metal rack storage tank, the metal gallium storage tank is connected to more than two gallium boats through a metal gallium transmission pipeline, the intermediate product supply system includes an initial reactant storage tank, the initial reactant storage tank is connected to more than two low-temperature reaction chambers through an initial reactant transmission pipeline, the outlet of the low-temperature reaction chamber is connected to an intermediate product pipeline, and the crystal growth system includes a high-temperature reaction chamber, a seed crystal assembly and an air inlet pipe, and the first inlet of the high-temperature reaction chamber is connected to the intermediate product pipeline. The present invention separates the low-temperature reaction chamber from the high-temperature reaction chamber, eliminates the influence of the high-temperature reaction chamber, and on this basis, multiple low-temperature reaction chambers and multiple gallium boats are provided to provide a basis for one backup and one use, and uninterrupted production is achieved through an external gallium source storage device.​

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tokenanalyst

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Weikong Micronano completed tens of millions of yuan in Pre-A round of financing, and its products are used in chip imaging and other fields​

Nanjing Weikong Micronano Technology Co., Ltd. (hereinafter referred to as "Weikong Micronano") recently completed a Pre A round of financing of tens of millions of yuan. Nanjing Venture Capital Group, together with Xi Venture Capital, Qilin Venture Capital and other institutions participated in this round of financing.

Weikong Micro-Nano was established in Nanjing in April 2020. Its main business is the design, production and sales of micro-focus X-ray sources. It is one of the few high-tech enterprises in China that has relatively mature micro-focus X-ray source technology and has achieved mass production. Weikong Micro-Nano's main products include micro-focus X-ray sources, film thickness measurement X-ray sources, cold cathode X-ray tubes, etc., which are widely used in chip imaging, new energy battery imaging, film thickness measurement and other fields.

According to the official website of Weikong Micronano, its core team comes from Southeast University, Hong Kong University of Science and Technology, Panda Electronics, etc. They have been deeply involved in the X-ray industry for more than ten years and have more than ten independent intellectual property rights, a Luxembourg invention patent and the EU CE certification.
According to the Nanjing Venture Capital Group, some of the product models independently developed by Weikong Micronano have broken the foreign monopoly and won recognition from many terminal battery manufacturers and industrial testing equipment customers.
It is reported that the X-ray source is one of the core components of X-ray detection equipment, X-ray machines, and CT machines. It is widely used in medical imaging, industrial flaw detection, security inspection equipment, national defense and military industries, and its focal size determines the detection accuracy. The smaller the size, the higher the accuracy. In the precision manufacturing fields such as integrated circuits and new energy batteries, micro-focus radiation sources are required, which have high technical barriers and the market has long been monopolized by American and Japanese companies . Weikong Micronano has rich experience in the field of vacuum devices, strong R&D capabilities, and strong product iteration capabilities.​

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tokenanalyst

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Corise Semiconductor Completes RMB 400 Million A+ Round of Financing​


Corise Semiconductor Technology (Dongyang) Co., Ltd. (Corise Semiconductor
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recently announced the completion of a RMB 400 million A+ round of financing, with the investor being Dongyang Zhongjing Xinji Enterprise Management Partnership (Limited Partnership). This round of financing will help Corise Semiconductor further expand its production capacity, enhance its technology research and development capabilities, and consolidate its market position in the field of packaging substrates.

Corise Semiconductor was founded in 2023 and is located in Dongyang City. The company focuses on the research and development, production and sales of high-end packaging substrates FCBGA. Its main products are FCBGA high-end substrates, which are used in high-computing chip packaging industries such as CPU, GPU, AI and automotive.

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tokenanalyst

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LDP vs LPP.

Air CAS LPP light source patent was authorize
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  1. Core System Components:
    • Main Pump Laser (1): Uses a high-repetition-rate Transverse Electric Atmosphere (TEA) CO₂ laser. It can employ either a MOPA (Master Oscillator Power Amplifier) or ILS (Injection-Locked System)structure:
      • MOPA: Includes a CO₂ master oscillator, modulator, and a folded-path TEA CO₂ amplifier with mirrors for power amplification.
      • ILS: Uses a CO₂ master oscillator, modulator, and either a seed laser injection process or a nanosecond YAG laser with a nonlinear converter to generate the seed laser.
    • Pre-pumped Picosecond Laser (2): Generates picosecond laser light to form a mist ball from tin droplets.
    • Beam Combiner (3): Merges the main pulse and picosecond lasers into a combined beam.
    • Tin Liquid Particle Generator (4): Produces tin droplet strings that, when bombarded by the picosecond laser, form a mist ball. The main laser then creates high-temperature plasma, emitting 13.5nm EUV light.
    • EUV Collecting Mirror (5): Focuses the EUV light.
    • Debris Magnetic Deflector (6): Removes ion debris from tin droplets using a magnetic field.
    • Vacuum Chamber (7): Maintains a vacuum environment for critical components.
    • Pump Laser Focusing Mirror (8): Focuses the combined laser onto tin droplets.
    • Automatic Synchronous Control System (9): Synchronizes all components, ensuring their pulse repetition frequencies match
  2. Key Operational Parameters:
    • Main pump laser specifications: Pulse power (20–200 MW), pulse length (10–30 ns).
    • Alternative Target Material: A gadolinium generator can replace tin to produce 6.7nm EUV light.
  3. Modulator Variations:
    • The modulator (12) can be a gallium arsenide/cadmium telluride electro-optic modulator or a semiconductor modulator with a Brewster angle plate and YAG laser.
  4. Structural Innovations:
    • The MOPA amplifier uses folded optics (mirrors 131/132) to enhance power efficiency.
    • The ILS structure offers flexibility in seed laser generation via YAG laser nonlinear conversion.
 
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