Chinese semiconductor thread II

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High-precision misalignment sensing for lithography using a joint space-frequency regression network​

Abstract​


In the realm of lithography misalignment sensing, achieving sub-0.2 nm precision is fraught with significant obstacles, largely due to the exacting demands placed on regression algorithms tasked with analyzing moiré fringes. These challenges stem from the inherent limitations of convolutional networks that process information from only one domain, often resulting in a deficit of critical feature data necessary for high-precision regression. To overcome these hurdles, we have engineered a groundbreaking convolutional regression network that synthesizes both spatial and frequency domain information from fringe patterns. This holistic approach has successfully recorded misalignment measurements with remarkable accuracy, achieving 0.12 nm at a 3σ confidence level. The method has shown considerable robustness against both system errors and environmental noise, bolstering its suitability for critical applications.

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Yaco Hongyu completed the first closing of its Series B financing, with Jiutian Shengshi and Greater Bay Area Fund jointly leading the investment!​

Wuxi Yaco Hongyu Electronics Co., Ltd., a senior supplier of domestic digital front-end FPGA prototype verification and hardware simulation accelerator EDA tools and solutions , completed the first closing of its Series B financing. The first phase of funds raised was jointly led by Shaoxing Jiutian Shengshi Venture Capital Fund (Jiutian Shengshi EDA Fund, jointly established by domestic EDA leading enterprise HuaDa Jiutian and Shengshi Zhida) and the Guangdong-Hong Kong-Macao Greater Bay Area Science and Technology Innovation Industry Investment Fund (Greater Bay Area Fund, initiated by China Economic Reform Research Foundation and China Electronics Information Industry Group), followed by Maosheng Investment under Hebei Construction Investment Group, and CICC served as financial advisor.
As one of the earliest companies in China to be rooted in domestic EDA technology research and development and product applications, Yaco Hongyu has always adhered to its original aspirations and worked tirelessly to solidly improve its R&D capabilities, focus on tackling key technologies, and continuously create industrial value. It has built stable, reliable, and user-trusted digital front-end simulation verification EDA product performance and high-quality technical services, becoming a leading FPGA prototype verification platform supplier and an excellent domestic hardware simulation accelerator supplier, providing mature products and high-quality services to 500+ cutting-edge integrated circuit development teams.
At present, the demand for complex design of high-end digital chips in frontier fields such as artificial intelligence, autonomous driving, and high-performance computing is increasing day by day. As the cornerstone of supporting the design, verification, and manufacturing of trillion-gate chips, the importance of digital EDA tools has become more prominent, and at the same time, higher requirements and challenges have been put forward for the key EDA technologies. Yaco Hongyu focuses on the key technologies of digital front-end EDA, and strives to break through the core technologies of the entire process of digital front-end high-level compilation and hardware-assisted verification, helping large-scale IC design companies reduce development difficulty, reduce development costs, and shorten development cycles.

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Oxidation of silicon on substrate induced bubble-like damage of Mo/Si mirror irradiated by femtosecond EUV pulses​


ABSTRACT​

Mo/Si multilayers are commonly used as extreme ultraviolet (EUV) reflection coatings owing to their high reflectivity at EUV wavelengths. This study utilized Shanghai Soft X-ray Free-Electron Laser (SXFEL) to generate 13.5 nm, ∼300 fs pulse lasers, and the laser damage behaviors of Mo/Si multilayers were investigated. The designed Mo/Si multilayer achieved high reflectivity at an incident angle of 20°. After exposing the surface to an average of 20 laser pulses per point at normal incidence, bubble-like damage was observed. Monte Carlo method was employed to obtain the energy absorption distribution of Mo/Si multilayers under EUV laser radiation. It was confirmed that the cause of EUV laser damage to Mo/Si multilayers was the enhancement of energy absorption, leading to the melting of the layers. High-energy absorption occurred at a place close to the substrate induced by the oxidation of Si and on the top of the multilayers, which resulted in multilayers detaching from the substrate and forming bubble-like morphology. This intensified interlayer diffusion and altered crystal orientation, resulting in irreversible damage to the multilayers.​

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