Chinese semiconductor thread II
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Computational metrology method of collector mirror for EUV lithography
Abstract
The characterization and measurement of the grating structures fabricated on the collector mirror are critical for achieving high spectral purity of the extreme ultraviolet lithography (EUVL) light source. In this paper, we propose a two-step method to enhance metrology for measuring the deformed grating structures on the EUVL collector. A scalar diffraction model is established for the deformation analysis of the collector gratings with high efficiency and accuracy. Then, a two-step method is applied, of which a “Go, No-Go” model acts as the first step to directly identify whether the gratings are qualified, reducing unnecessary calculations. As the second step, only for those unqualified gratings, an improved multi-objective particle swarm optimization model is brought out to accurately make a quantitative reconstruction on the key dimensional parameters of the collector gratings. The proposed method offers a novel scheme for facilitating the inverse scattering problem of the measurement on collector gratings. It eliminates the need for complex numerical calculations and the reliance on a large dataset while still providing accurate results, which is promising for the inline dimensional metrology.
Yiyi Industrial completed tens of millions of yuan in Pre-A round of financing, focusing on computational optics
According to Zhidao Capital, Shanghai Yiyi Industrial Co., Ltd. has recently completed a Pre-A round of financing of tens of millions of yuan, led by Meihua Venture Capital, followed by Zhidao Capital and Pudong Venture Capital. Yiyi's funds raised in this round will be mainly used for the research and development and production of ultra-precision phase modulation systems and computational optical products. It is reported that Yiyi Industrial was established in 2016 and is engaged in the research and development and promotion of optoelectronic detection, imaging and other technologies. Previously, Yiyi Industrial had received angel round investment from OPTIS Group
Xinyueneng Semiconductor successfully developed the first generation of silicon carbide trench MOSFET process platform, accelerating the gap in the industrialization of domestic silicon carbide trench devices
Guangdong Xinyueneng Semiconductor Co., Ltd. (hereinafter referred to as "Xinyueneng") has successfully developed the first generation of silicon carbide trench MOSFET process platform after nearly two years of technical research and development and testing. The platform adopts the trench MOSFET structure with independent intellectual property rights of Xinyueneng, which can significantly reduce the specific on-resistance and increase the current density. While ensuring product reliability, it effectively breaks through the bottleneck problem of planar MOSFET performance improvement, further improves chip performance and significantly reduces costs.
It is reported that the 1200V trial product of Xinyue Energy's first-generation silicon carbide trench MOSFET process platform has a maximum single-chip yield of more than 97%, an on-resistance of 12.5mΩ at a chip size of 23mm2 , and a specific on-resistance of 2.3mΩ• cm2 , which is comparable to the performance indicators of mainstream products of leading international manufacturers. The temperature rise coefficient, switching loss, avalanche resistance and short-circuit resistance can effectively meet the requirements of industrial applications. In January 2025, it has passed the 1000-hour assessment of key reliability tests such as HTGB, HTRB, and HV-H3TRB with zero failure. In addition to the first-generation products, Xinyue Energy is also actively developing and deploying the second-generation and third-generation trench MOSFETs to further consolidate its technological leadership in China and catch up with leading international manufacturers.
It is reported that the 1200V trial product of Xinyue Energy's first-generation silicon carbide trench MOSFET process platform has a maximum single-chip yield of more than 97%, an on-resistance of 12.5mΩ at a chip size of 23mm2 , and a specific on-resistance of 2.3mΩ• cm2 , which is comparable to the performance indicators of mainstream products of leading international manufacturers. The temperature rise coefficient, switching loss, avalanche resistance and short-circuit resistance can effectively meet the requirements of industrial applications. In January 2025, it has passed the 1000-hour assessment of key reliability tests such as HTGB, HTRB, and HV-H3TRB with zero failure. In addition to the first-generation products, Xinyue Energy is also actively developing and deploying the second-generation and third-generation trench MOSFETs to further consolidate its technological leadership in China and catch up with leading international manufacturers.
North China Huachuang: Plans to acquire the control rights of Xinyuan Micro to fire the first shot of equipment mergers and acquisitions
Xinyuanwei's product line is highly complementary to North Huachuang. Xinyuanwei has a relatively complete product line of coating and developing equipment, and the market share of off-line, I-line, and K-line equipment has steadily increased. The research and development of a new generation of ultra-high-energy ArFi equipment is actively promoted, which is expected to fill the gaps in North Huachuang's related fields. At present, the "etching, thin film, furnace tube, cleaning" product line of North Huachuang roughly covers 50%~60% of the front-end equipment, and it may increase to 60%~70% after adding "coating and developing". At the same time, Xinyuanwei's front-end cleaning equipment and advanced packaging equipment product lines including bonding/debonding equipment are expected to be closely integrated with North Huachuang.
Xinyuanwei and North Huachuang are expected to form a high degree of synergy. On the sales side, a more complete product matrix is expected to bring customers a closer one-stop purchasing experience on the one hand, and on the other hand, it will also bring more space for the sales strategies of North Huachuang and Xinyuanwei; on the R&D side, the underlying component systems and software algorithms of semiconductor equipment have certain commonalities, and the R&D efficiency of North Huachuang and Xinyuanwei is expected to be improved.
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Naura will probably want to expand into Ion Implantation and metrology. Acquiring CETC ion implantation division is unlikely, so merging with SRI-I or Wanye Enterprise could be a possibility. In metrology Skyverse, Jingce are also a possibility for merging.
AMEC will probably merge with Piotech (deposition) and Raintree Scientific Instruments (metrology).
ACM Shanghai looks like is more interesting on their product lines but there is possibility of mergers if become a trend.
More possibilities also are in CMP (Hawtsing, Sizone), metrology(DJEL and others).
Focusing on the semiconductor industry, another key ceramic laboratory may be established!
The Taizhou Municipal Science and Technology Bureau issued a public notice on the proposed construction projects of municipal key laboratories in 2025. Among them, Taizhou Semiconductor Ceramic Materials Key Laboratory is on the list, and the supporting unit is Jiangsu Jicui Semiconductor Ceramic Materials Research Institute Co., Ltd.
As key components of semiconductor production equipment, the research and development and production of precision ceramic components directly affect the development of the semiconductor equipment manufacturing industry and even the entire semiconductor industry chain. It can be said that precision ceramic components are the foundation of the entire semiconductor industry. Therefore, in order to break through the "stuck neck" dilemma faced by my country's semiconductor industry, it is necessary to pay attention to the localization development of key components of semiconductor production equipment such as precision ceramic components, and to carry out research and development of common and key technologies in the industry, as well as the development and optimization of new process flows for ceramic preparation, which are important links in the localization of the semiconductor industry.
Jiangsu Jicui Semiconductor Ceramic Materials Research Institute Co., Ltd. was established in 2023. It focuses on the research and development of semiconductor ceramic materials. It has a 4,000-square-meter R&D pilot workshop and a 2,000-square-meter office area. It is equipped with advanced ceramic powder processing equipment, molding and sintering equipment, and Class 1,000/Class 100 clean workshops to meet the high-precision requirements of the semiconductor industry.
Jiangsu Jicui Semiconductor Ceramic Materials Research Institute is jointly established by the National Key Laboratory of New Ceramics and Fine Technology of Tsinghua University, Taixing High-tech Industrial Development Zone, Jiangsu Industrial Technology Research Institute, and Taizhou Industrial Technology Research Institute. The institute aims to cultivate and develop the semiconductor materials and equipment components industry, focuses on breaking through the commonality and key technologies of the semiconductor ceramic materials industry, gathers top talent teams in the field of semiconductor ceramic materials technology, conducts industrial technology application research and integrated innovation, promotes the transfer and transformation of scientific and technological achievements, derives and incubates technology-based enterprises, improves the industrial chain, cultivates high-level innovative talents, and continuously develops core technologies such as design, formulation, sintering manufacturing, and precision machining of precision ceramic components for semiconductors, realizes domestic substitution of key components, and becomes an industry leader in the field of precision ceramic components for domestic semiconductor equipment.
Shanghai University, Jilin University and TCL jointly develop a pure blue LED material
Scientists from Shanghai University, Jilin University and TCL Industrial Research Institute have made a major breakthrough in the field of quantum dot light-emitting diodes (QLEDs). Their research results were published in the journal Nature, and they found a method to synthesize uniform ZnSeTeS quantum dots (QDs) through an isoelectronic control strategy, which solves the environmental problems and performance bottlenecks faced by traditional heavy metal cadmium-based blue light QDs. This innovation provides a new solution for the development of efficient and stable heavy metal-free blue light QLEDs, which is expected to promote the development of next-generation display technology.
