Rumours circulating on domestic social media...
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Chinese semiconductor thread II
- Thread starter vincent
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SMIC already has all the ASML lithography machines it needs for 70k wpm. The question is other tools
I've had to resize your photo because it is huge. Please do this in the future or I'm going to have to ban you from this thread.
Also for this news, I just saw this as a social media posting, i wouldn't get too excited yet.
Sophgon built integrated compute platform using its 64-core RISC-V server CPU SG2044 that can do inference of DeepSeek R1 70B @ 11.8tps
Zhejiang and Garen Semi progress in Gallium Oxide ingot, wafer and equipment.
Professor of Zhejiang University and chairman of Hangzhou Gallium Semiconductor Co., Ltd., delivered a keynote speech on "Progress in Large-Size High-Quality Gallium Oxide Single Crystal Materials" at the "Sub-Forum 2: Gallium Nitride and Other Power Semiconductor Technologies and Applications". He shared the latest progress in gallium oxide single crystal growth technology, Czochralski, casting and VB single crystal growth research and development. The report pointed out that there are many methods for growing gallium oxide crystals, and casting and VB methods have shown great potential for large-scale industrialization in terms of size, cost, quality and many other aspects.
The casting method and other technologies developed by its team have successfully achieved the growth of large-size (6-inch) gallium oxide crystals with multiple crystal orientations and different doping, which can meet various epitaxy and device requirements. According to estimates, after mass production of its existing technology, the cost of 6-inch substrates can be reduced to less than 2,000 yuan, and further cost reduction will be completed within 2 to 3 years, providing the industry with high-quality, low-cost substrates. High-quality, low-cost substrates can assist peers in overcoming some key problems, such as defect behavior, p-type doping, and large-area, high-current devices. The industrialization process of gallium oxide will gradually accelerate, and the combination of substrates, epitaxy, devices, and applications should be closer to achieve transcendence.
