AMEC: PRISMO PDS8 – CVD equipment for epitaxial growth of SiC power devices
As one of the typical representatives of wide bandgap semiconductor materials, silicon carbide (SiC) has a wide range of applications in high-power, high-frequency fields such as power devices, photovoltaic inverters and electric vehicles. In recent years, the market for silicon carbide power devices has been expanding rapidly, so the demand for larger diameter and higher quality epitaxial layers has become more and more urgent.
The latest CVD platform for SiC epitaxial growth developed by AMEC, PRISMO PDS8 TM , is compatible with 6- and 8-inch SiC substrates for homogeneous epitaxy. Combining numerical simulation and experimental research, it is proved that the parasitic deposition of gas phase transport and reaction precursors will lead to the redistribution of gas phase components above the wafer surface. By optimizing the process, an epitaxial layer with excellent thickness and doping concentration uniformity, smooth surface and low defect density is quickly grown on a 6-inch 4H-SiC substrate. The epitaxial growth rate exceeds 50 μm/h, and the thickness and doping concentration uniformity are 1.03% and 0.73%, respectively.
The latest CVD platform for SiC epitaxial growth developed by AMEC, PRISMO PDS8 TM , is compatible with 6- and 8-inch SiC substrates for homogeneous epitaxy. Combining numerical simulation and experimental research, it is proved that the parasitic deposition of gas phase transport and reaction precursors will lead to the redistribution of gas phase components above the wafer surface. By optimizing the process, an epitaxial layer with excellent thickness and doping concentration uniformity, smooth surface and low defect density is quickly grown on a 6-inch 4H-SiC substrate. The epitaxial growth rate exceeds 50 μm/h, and the thickness and doping concentration uniformity are 1.03% and 0.73%, respectively.