Domestic 8-inch visual SiC resistance furnace debuts!
The 8-inch resistance-method silicon carbide single crystal furnace developed by Jingsheng Co., Ltd. can make the silicon carbide crystal growth process "visible", thereby reducing R&D costs and providing an equipment foundation for the mass production of 8-inch substrates.
According to Wu Chunsheng, secretary of the board of directors of Jingsheng Co., Ltd., the growth of silicon carbide single crystals was previously carried out in a completely closed "black box". The growth process was not visible, so each time you looked at the crystal, it was like opening a " blind box " . Only when you opened the furnace body could you know the growth status of the crystal. Due to the lack of effective means of observing the growth status of the crystal, abnormalities in the crystal growth process could not be adjusted in time, and process development required a lot of experiments for trial and error and iterative optimization, which led to problems such as long development cycle, high cost, and low yield.
The 8-inch resistance method silicon carbide single crystal furnace launched by Jingsheng Co., Ltd. introduces a visual detection system , which can make the crystal growth process visible. Wu Chunsheng further introduced that based on real-time observation of growth rate and powder evolution state, the single crystal furnace can adjust power, pressure and other conditions through intervention to keep crystal growth in a controllable state.
In addition, to address the difficulty of temperature gradient control, the equipment adopts a multi-heater layout , and each heater can be controlled individually, which effectively solves the problem of poor controllability of temperature gradient and improves the quality of crystal growth. The Jingsheng team conducted dozens of experiments in simulation, structure, and material selection, and finally found the balance between the two, reducing the minimum crystal growth power from 30kW~40kW to below 25kW .