Jingsheng Electromechanical: Revenue in 2023 will be 17.983 billion yuan, and the 8-inch SiC epitaxial furnace has achieved mass production
On April 13, Jingsheng Electromechanical released its 2023 annual report, achieving operating income of 17.983 billion yuan, a year-on-year increase of 69.04%; net profit attributable to shareholders of listed companies was 4.558 billion yuan, a year-on-year increase of 55.85%; in addition, Jingsheng successfully developed 8-inch single-wafer and dual-wafer silicon carbide epitaxial growth
equipment.
"Equipment + Materials" collaborative layout
According to Jingsheng's 2023 annual report, Jingsheng Electromechanical has always implemented the development strategy of "advanced materials, advanced equipment". In terms of semiconductor equipment, it is mainly divided into three main link equipment: silicon wafer manufacturing, chip manufacturing, and packaging manufacturing, and extended development It has developed thinning equipment, epitaxial equipment, LPCVD equipment, ALD equipment, etc. used in 8-12 inch wafers and packaging ends, as well as 6-8 inch silicon carbide epitaxial equipment and optical measurement equipment used in power semiconductors; in terms of materials , and gradually developed materials business with broad application scenarios such as silicon carbide materials.
Important R&D Progress
During the reporting period, Jingsheng Electromechanical successfully developed and sold 8-inch and 12-inch atmospheric silicon epitaxial growth equipment in the field of power semiconductors , as well as internationally advanced 8-inch single-chip and double-chip silicon carbide epitaxial growth equipment. Based on the original high-precision closed-loop temperature control and precise process gas shunt control of the 6-inch epitaxial equipment, it solves the control problems such as temperature field uniformity and flow field uniformity in the cavity design. The dual-chip epitaxial equipment is integrated It has core technologies such as multi-temperature field collaborative induction heating and flow field zoning control, and has the ability to process two wafers at the same time in a single cavity. It can greatly increase the unit productivity of the equipment while ensuring high epitaxial growth quality, and effectively reduce the cost of silicon carbide. Epitaxial wafer production costs. Successfully developed optical measurement equipment for quality inspection of silicon carbide substrate wafers and epitaxial wafers, realizing the localization of silicon carbide quality inspection equipment.