Chinese semiconductor thread II
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The total investment is estimated to be 20 billion! This 6-inch SiC project in Hubei is about to be capped!
Recently, according to Hubei news, YOFC’s advanced Wuhan base project is expected to be capped in June this year and put into production in July next year. After reaching production, it is expected to have an annual output of 360,000 6-inch SiC wafers and epitaxial wafers.
Recently, according to "Hubei News", YOFC's advanced Wuhan base project is expected to be capped in June this year and put into production in July next year. After reaching production, it is expected to have an annual output of 360,000 6-inch SiC wafers and epitaxial wafers, and an annual output of 61 million power devices. module.
It is reported that on August 25, 2023, the Wuhan East Lake High-tech Zone Management Committee and YOFC Advanced Semiconductor signed a cooperation agreement on the third-generation semiconductor power device R&D and production base project. The total investment in the YOFC advanced third-generation semiconductor power device R&D and production base project is expected to exceed 20 billion yuan, of which the total investment in the first phase of the project is 10 billion yuan. It can produce 360,000 SiC MOSFET wafers annually, including epitaxy, device design, wafer Manufacturing, packaging, etc.
It is worth mentioning that in May 2023, YOFC Advanced Semiconductor clearly proposed the development strategy of "All in SiC-Ten Years Golden Track" to fully focus on the SiC track. In July of that year, YOFC Advanced Semiconductor's SiC strategic project (KO) A sample reached the expected design goals, marking that YOFC Advanced Semiconductor has the ability to independently research and develop automotive grade SiC MOSFET products.
It is understood that YOFC Advanced has a 1200V Gen3 SiC MOSFET design and process platform with completely independent intellectual property rights. The specific on-resistance (Ron, sp) of the 15mohm product has reached 3.4mΩ·cm2, ranking among the internationally advanced levels. In addition, YOFC Advanced's main drive SiC MOSFET wafer products based on this platform have a yield rate of 80%.
In December 2023, YOFC Advanced's first self-developed product, the 1200V 20A SiC SBD, officially entered the trial production stage, marking that YOFC Advanced has the ability to independently develop and mass produce SiC products.
Recently, according to "Hubei News", YOFC's advanced Wuhan base project is expected to be capped in June this year and put into production in July next year. After reaching production, it is expected to have an annual output of 360,000 6-inch SiC wafers and epitaxial wafers, and an annual output of 61 million power devices. module.
It is reported that on August 25, 2023, the Wuhan East Lake High-tech Zone Management Committee and YOFC Advanced Semiconductor signed a cooperation agreement on the third-generation semiconductor power device R&D and production base project. The total investment in the YOFC advanced third-generation semiconductor power device R&D and production base project is expected to exceed 20 billion yuan, of which the total investment in the first phase of the project is 10 billion yuan. It can produce 360,000 SiC MOSFET wafers annually, including epitaxy, device design, wafer Manufacturing, packaging, etc.
It is worth mentioning that in May 2023, YOFC Advanced Semiconductor clearly proposed the development strategy of "All in SiC-Ten Years Golden Track" to fully focus on the SiC track. In July of that year, YOFC Advanced Semiconductor's SiC strategic project (KO) A sample reached the expected design goals, marking that YOFC Advanced Semiconductor has the ability to independently research and develop automotive grade SiC MOSFET products.
It is understood that YOFC Advanced has a 1200V Gen3 SiC MOSFET design and process platform with completely independent intellectual property rights. The specific on-resistance (Ron, sp) of the 15mohm product has reached 3.4mΩ·cm2, ranking among the internationally advanced levels. In addition, YOFC Advanced's main drive SiC MOSFET wafer products based on this platform have a yield rate of 80%.
In December 2023, YOFC Advanced's first self-developed product, the 1200V 20A SiC SBD, officially entered the trial production stage, marking that YOFC Advanced has the ability to independently develop and mass produce SiC products.
BYD invests in Shanghai Xinxiangcheng
Shanghai Xinxiangcheng Semiconductor Co., Ltd. underwent industrial and commercial changes, with new shareholders BYD Co., Ltd. and Jiaxing Chuangqi Kaiying Venture Capital Partnership (Limited Partnership). At the same time, the registered capital increased from approximately 132.95 million yuan increased to approximately 1.478 million yuan.
Tianyancha shows that Shanghai Xinxiangcheng Semiconductor Co., Ltd. was established in November 2021. The legal representative is Xiao Zhiming. Its business scope includes technology development, technical consulting, technical services, and technology transfer in the fields of semiconductor technology, computer technology, and electronic technology. , electronic product sales, integrated circuit design, industrial design services, etc.
It is understood that Shanghai Xinxiangcheng Semiconductor Co., Ltd. is currently committed to high-quality, industrial-grade/automotive-grade power management chips and high-performance signal chain chips, serving the automotive, industry, energy storage, communications, data centers, security and other high-end industries. Growth industry. In November 2023, Shanghai Xinxiangcheng Semiconductor Co., Ltd. completed Series A financing. This round was exclusively invested by Kaiyuan Mingxin.
Interesting SSMB ring can not only power EUV machines but also DUV machines with kilowatt of ultraviolet power, they said using radiation modulators.
The phase 2 is continuing after a COVID pause. They are testing multiple scenarios including FEL EUV.
The phase 2 is continuing after a COVID pause. They are testing multiple scenarios including FEL EUV.
Improvement of fluorine attack induced word-line leakage in 3D NAND flash memory
Institute of Microelectronics, Chinese Academy of Sciences
University of Chinese Academy of Sciences
Yangtze Memory Technologies Co., Ltd
Yangtze Advanced Memory Industry Innovation Center Co., Ltd.
Abstract
In this work, the influence of fluorine (F) erosion on tungsten (W) gate process is studied, and the measure to mitigate the word line (WL) leakage resulting from F erosion in 3D NAND flash memory is proposed. As the number of layers in 3D NAND increases, the tungsten (W) gate word line (WL) layer fill process becomes more challenging in the post-gate process. As the fill path length increases, the tungsten gates become more susceptible to voiding during deposition, resulting in the accumulation of fluorine (F) by-products, and causing fluorine attack issues. In particular, under the influence of subsequent high-temperature processes, the by-products containing fluorine can diffuse into the surrounding structure and corrode the surrounding oxide layer. leads to WL leakage, thereby affecting device yield and reliability. This paper begins by analyzing the microscopic principles of fluorine erosion in 3D NAND. We also propose a low-pressure annealing method to address the issue of fluorine erosion. Then, we conduct the experiments on annealing planar thin film stacks and 3D filled structures under atmospheric condition and low-pressure condition. We use various methods to characterize the concentration and distribution of residual fluorine elements. The experimental results demonstrate that under appropriate conditions, the residual fluorine in the tungsten gate can be effectively released by low-pressure annealing, thus reducing the leakage index of the word line. Additionally, as the outer CH is closer to the fluorine discharge channel, the influence of low-pressure annealing on the outer CH is more pronounced than on the inner CH. The low-pressure annealing can significantly reduce the fluorine content in the tungsten gate. This method can also mitigate the issue of fluorine attack oxides and reduce the WL leakage. Using low-pressure annealing treatment can also enhance the quality of 3D NAND flash technology.
Northern Huachuang's patent for "electrostatic chuck and semiconductor process equipment" was authorized.
Beijing North Huachuang Microelectronics Equipment Co., Ltd. recently obtained a patent called "Electrostatic Chuck and Semiconductor Process Equipment". The authorization announcement number is CN112331607B, and the authorization announcement date is March 2024. 26th, and the application date is October 28, 2020.
The embodiment of the present application realizes that the radio frequency device directly feeds radio frequency into the electrode assembly, avoiding the impact of capacitance differences between the multi-layer structures of the electrostatic chuck on the radio frequency energy, so that the radio frequency energy reaching the upper surface of the electrostatic chuck is the same, thereby significantly Improves the consistency of process results for workpieces to be processed.