SMIC's "Semiconductor Device and Formation Method" Patent Authorized
SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd. recently obtained a patent called "Semiconductor Device and Formation Method". The authorization announcement number is CN111900088B. The authorization announcement date is March 26, 2024. The application The date is May 5, 2019.The present invention provides a semiconductor device and a method for forming the same, which includes the steps of: providing a substrate with a plurality of spaced and arranged fins formed on the substrate; forming a dummy gate structure across the fins on the substrate; A first interlayer dielectric layer is formed on the substrate and on the sidewall of the dummy gate structure, and the top of the first interlayer dielectric layer is lower than the top of the dummy gate structure; defining cut-off opening pattern; etching the dummy gate structure along the cutting opening pattern until the substrate is exposed to form a cutting opening; forming a second interlayer dielectric layer on the first interlayer dielectric layer, And the second interlayer dielectric layer fills the cutting opening, and the top of the second interlayer dielectric layer is flush with the top of the dummy gate structure; the present invention makes the performance of the formed semiconductor device stable.