Honestly this just looks like South Korean cope.
There needs to be actual verifiable sources/data cited to make this a consideration worthy claim, otherwise it's just cope.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
There needs to be actual verifiable sources/data cited to make this a consideration worthy claim, otherwise it's just cope.
If I recall correctly, this video channel is a notorious nonsense outlet. In military circles, it earned the sarcastic nickname "落 Chief Engineer" for its polished yet riddled-with-errors videos—where nine out of ten statements are incorrect.
FugaGa Industry's 10,000-wafer 6/8-inch production line successfully passed environmental impact assessment, further accelerating the industrialization of gallium oxide.
In January 2026, Hangzhou Fujia Gallium Industry Technology Co., Ltd. (FugaGa) successfully passed its environmental impact assessment for the 10,000-wafer 6/8-inch gallium oxide production line, marking a major milestone in the industrialization of gallium oxide technology in China.
This achievement signifies full regulatory approval for large-scale manufacturing and accelerates FugaGa’s path to market dominance. The company has made significant progress from early-stage research to commercial production, including:
- World-first EFG equipment with "one-click" crystal growth (covering 2–6 inch wafers), holding 10 patents (6 domestic, 4 international).
- Fully automated VB-growth equipment, breaking China’s technical bottleneck in 6-inch single crystal production.
- A comprehensive product portfolio:
- Gallium oxide substrates (2–6 inches; 26 types), customizable by size, electrical properties, and orientation.
- Epitaxial wafers (15 conventional & custom MBE types) using advanced MOCVD/MBE processes, enabling precise control over layer thickness, doping, and composition.
FugaGa is now positioned to offer cost-effective, high-performance gallium oxide solutions globally, supporting next-generation power electronics and semiconductor applications. The company aims to rapidly promote its 6/8-inch products in 2026, leveraging strong technology and production capacity.
Yongjiang Laboratory overcomes key technologies for ultra-precision TSV, supported by domestically produced equipment throughout the entire process.
The Yongjiang Laboratory has achieved a major breakthrough in ultra-precision Through-Silicon Via (TSV) technology, developing a TSV prototype with a thickness of 15μm and an aperture of just 2.6μm dramatically smaller than current industry standards (5–8μm diameter, 30μm depth). This advancement significantly improves interconnect density, signal integrity, and heat dissipation, meeting the demands of next-generation high-bandwidth memory (HBM) and AI chips.
- The breakthrough is based on an original ultra-flat temporary bonding + precision thinning process that overcomes challenges like wafer warpage and uniformity.
- The entire TSV fabrication process uses 100% domestically produced equipment, validating China’s capability for self-reliant advanced packaging technology.
- Performance surpasses existing HBM4 mass production standards, marking a shift from "catching up" to "leading" in ultra-precision TSVs.
- Enables independent development of high-end HBM and 3D/2.5D heterogeneous integration technologies.
- Reduces reliance on foreign equipment and processes, enhancing national security in AI computing, data centers, and advanced automotive chips.
- Supports the industrialization of HBM3/E, HBM4, Chiplet, and other cutting-edge semiconductor products.
Looking ahead, Yongjiang Laboratory will accelerate pilot testing, drive industrial adoption, and strengthen the entire ecosystem from materials to equipment to promote original innovation and sustainable development in China’s advanced semiconductor packaging sector.
Hefei Luxiao Semiconductor Materials Co., Ltd Key Progress Achieved In 12-inch SiC!
On February 22, Hefei Luxiao Semiconductor Materials Co., Ltd., a subsidiary of Luxiao Technology (002617), reported good news.
Following a breakthrough in key technologies for 8-inch conductive silicon carbide substrates, the company has made significant progress in the field of semi-insulating silicon carbide, producing its first 12-inch silicon carbide single crystal sample and completing the development and testing of the entire process from crystal growth to substrate.
This marks a technological breakthrough for Hefei Luxiao in building a full-category product matrix of "conductive + semi-insulating" products, indicating that it will become a key force for winning the future in the large-size market.
Silicon carbide materials, as the core building block of third-generation semiconductors, are mainly divided into two branches: conductive and semi-insulating, depending on the application scenario.
Luxshare Precision Technology stated that its Hefei branch has formulated a new industrialization path, planning to expand production capacity based on the existing Phase I project at its Hefei base. The planned new production lines will focus on the large-scale production of 8-inch conductive silicon carbide substrates and 12-inch semi-insulating substrates, aiming to quickly respond to the growing market demand for high-performance silicon carbide materials from fields such as new energy vehicles, photovoltaic power generation, energy storage, consumer electronics, and industrial control.
Following a breakthrough in key technologies for 8-inch conductive silicon carbide substrates, the company has made significant progress in the field of semi-insulating silicon carbide, producing its first 12-inch silicon carbide single crystal sample and completing the development and testing of the entire process from crystal growth to substrate.
This marks a technological breakthrough for Hefei Luxiao in building a full-category product matrix of "conductive + semi-insulating" products, indicating that it will become a key force for winning the future in the large-size market.
Silicon carbide materials, as the core building block of third-generation semiconductors, are mainly divided into two branches: conductive and semi-insulating, depending on the application scenario.
Luxshare Precision Technology stated that its Hefei branch has formulated a new industrialization path, planning to expand production capacity based on the existing Phase I project at its Hefei base. The planned new production lines will focus on the large-scale production of 8-inch conductive silicon carbide substrates and 12-inch semi-insulating substrates, aiming to quickly respond to the growing market demand for high-performance silicon carbide materials from fields such as new energy vehicles, photovoltaic power generation, energy storage, consumer electronics, and industrial control.
China's EUV projects all have very tight operational security, the last thing they would want is a video detailing their efforts on YouTube for the whole western world to see.
The news has been pretty quiet in regards to EUV lately but I can guarantee you that no concrete information about Chinese EUV will be found on YouTube. Stuff happens behind the scenes.
They have a good point, China has a significant gap in terms of catching up to NVIDIA chips but news outlets don't have latest and accurate information about China. The article would probably be correct if China stands still from now until 2027 but that obviously won't happen.
The only thing we can use to gauge China's EUV development is research papers and patents, everything else you have to take with a huge grain of salt. Even the "Manhattan Project" Reuters article mentions the scientists working on the "EUV Machine" are working under maximum security and supervision though even THAT article is questionable.
Also i have watched one of the videos and it only briefly mentioned "China's EUV machine project" and the rest was talking about the technical aspects and the history of why 13.5 nm EUV light was chosen and why LPP was chosen over other light sources, and at least the technical part of the video seems accurate but i am also someone who doesn't have a lot of technical knowledge about EUV and optics so i could be wrong.