Think you will always need a collector mirror. But you almost certainly won’t need as many focusing and filtering elements.
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Chinese semiconductor thread II
- Thread starter vincent
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Well SSMB is basically laser like, the use of an huge collector mirror, i think, is because plasma produced EUV radiation is very diffuse the collector mirror "collect" the radiation and focus it into a point to the illumination optic system. I think you may be referring to the overall EUV optics, if that is the case then yes, some EUV mirrors in the illumination subsystem will be necessary to steer the SSMB radiation to the projection objective then to the wafer.
i think we missed this news ..
Ten years of sharpening the sword! Professor Wang Hongxing’s team at Xi’an Jiaotong University achieved mass production of 2-inch single crystal diamond electronic devices..
As a representative of the third generation of semiconductor materials, diamond semiconductor is also called the ultimate semiconductor. “Diamond semiconductor has material properties such as ultra-wide bandgap (5.45eV), high breakdown field strength (10MV/cm), high carrier saturation drift velocity, high thermal conductivity (22 W/cmK), and excellent device quality. Factor." Professor Wang Hongxing of Xi'an Jiaotong University introduced, "To this end, the use of diamond substrates can develop high-temperature, high-frequency, high-power, radiation-resistant electronic devices, and overcome technical bottlenecks such as the 'self-heating effect' and 'avalanche breakdown' of the device. , playing an important role in the development of 5G/6G communications, microwave/millimeter wave integrated circuits, detection and sensing and other fields." However, the development of diamond electronic devices around the world is limited by the problem of large-size, high-quality single crystal substrates.
"The commercialization of silicon, sapphire and other substrates has provided prerequisites for heteroepitaxial single crystal diamond." Wang Hongxing said.
Recently, the team of Professor Wang Hongxing of Xi'an Jiaotong University used independent research and development technology to successfully achieve mass production of 2-inch heteroepitaxial single crystal diamond self-supporting substrates.
While Wang Hongxing led the team to tackle key research and development problems in the laboratory, he also carried out extensive cooperation in the research and development and application of diamond semiconductor materials and devices with relevant large domestic communication companies and relevant research institutes of China Electronics Technology Group, promoting the development of diamond RF power electronic devices, power electronic devices, Practical development of MEMS and other devices. Wang Hongxing's team used microwave plasma chemical vapor deposition (MPCVD) technology to successfully mass-produce 2-inch heteroepitaxial single-crystal diamond self-supporting substrates, and through effective control of film formation uniformity, temperature field and flow field, and then The yield of heteroepitaxial single crystal diamond is improved. The substrate surface has a step-flow growth mode, which can reduce the defect density of the substrate and improve the crystal quality. The half-peak widths of XRD (004) and (311) rocking curves are less than 91arcsec and 111arcsec respectively. All indicators have surpassed the best foreign standards and reached the world's leading level.
Ten years of sharpening the sword! Professor Wang Hongxing’s team at Xi’an Jiaotong University achieved mass production of 2-inch single crystal diamond electronic devices..
As a representative of the third generation of semiconductor materials, diamond semiconductor is also called the ultimate semiconductor. “Diamond semiconductor has material properties such as ultra-wide bandgap (5.45eV), high breakdown field strength (10MV/cm), high carrier saturation drift velocity, high thermal conductivity (22 W/cmK), and excellent device quality. Factor." Professor Wang Hongxing of Xi'an Jiaotong University introduced, "To this end, the use of diamond substrates can develop high-temperature, high-frequency, high-power, radiation-resistant electronic devices, and overcome technical bottlenecks such as the 'self-heating effect' and 'avalanche breakdown' of the device. , playing an important role in the development of 5G/6G communications, microwave/millimeter wave integrated circuits, detection and sensing and other fields." However, the development of diamond electronic devices around the world is limited by the problem of large-size, high-quality single crystal substrates.
"The commercialization of silicon, sapphire and other substrates has provided prerequisites for heteroepitaxial single crystal diamond." Wang Hongxing said.
Recently, the team of Professor Wang Hongxing of Xi'an Jiaotong University used independent research and development technology to successfully achieve mass production of 2-inch heteroepitaxial single crystal diamond self-supporting substrates.
While Wang Hongxing led the team to tackle key research and development problems in the laboratory, he also carried out extensive cooperation in the research and development and application of diamond semiconductor materials and devices with relevant large domestic communication companies and relevant research institutes of China Electronics Technology Group, promoting the development of diamond RF power electronic devices, power electronic devices, Practical development of MEMS and other devices. Wang Hongxing's team used microwave plasma chemical vapor deposition (MPCVD) technology to successfully mass-produce 2-inch heteroepitaxial single-crystal diamond self-supporting substrates, and through effective control of film formation uniformity, temperature field and flow field, and then The yield of heteroepitaxial single crystal diamond is improved. The substrate surface has a step-flow growth mode, which can reduce the defect density of the substrate and improve the crystal quality. The half-peak widths of XRD (004) and (311) rocking curves are less than 91arcsec and 111arcsec respectively. All indicators have surpassed the best foreign standards and reached the world's leading level.
pretty sure it got posted herei think we missed this news ..
Ten years of sharpening the sword! Professor Wang Hongxing’s team at Xi’an Jiaotong University achieved mass production of 2-inch single crystal diamond electronic devices..
As a representative of the third generation of semiconductor materials, diamond semiconductor is also called the ultimate semiconductor. “Diamond semiconductor has material properties such as ultra-wide bandgap (5.45eV), high breakdown field strength (10MV/cm), high carrier saturation drift velocity, high thermal conductivity (22 W/cmK), and excellent device quality. Factor." Professor Wang Hongxing of Xi'an Jiaotong University introduced, "To this end, the use of diamond substrates can develop high-temperature, high-frequency, high-power, radiation-resistant electronic devices, and overcome technical bottlenecks such as the 'self-heating effect' and 'avalanche breakdown' of the device. , playing an important role in the development of 5G/6G communications, microwave/millimeter wave integrated circuits, detection and sensing and other fields." However, the development of diamond electronic devices around the world is limited by the problem of large-size, high-quality single crystal substrates.
"The commercialization of silicon, sapphire and other substrates has provided prerequisites for heteroepitaxial single crystal diamond." Wang Hongxing said.
Recently, the team of Professor Wang Hongxing of Xi'an Jiaotong University used independent research and development technology to successfully achieve mass production of 2-inch heteroepitaxial single crystal diamond self-supporting substrates.
While Wang Hongxing led the team to tackle key research and development problems in the laboratory, he also carried out extensive cooperation in the research and development and application of diamond semiconductor materials and devices with relevant large domestic communication companies and relevant research institutes of China Electronics Technology Group, promoting the development of diamond RF power electronic devices, power electronic devices, Practical development of MEMS and other devices. Wang Hongxing's team used microwave plasma chemical vapor deposition (MPCVD) technology to successfully mass-produce 2-inch heteroepitaxial single-crystal diamond self-supporting substrates, and through effective control of film formation uniformity, temperature field and flow field, and then The yield of heteroepitaxial single crystal diamond is improved. The substrate surface has a step-flow growth mode, which can reduce the defect density of the substrate and improve the crystal quality. The half-peak widths of XRD (004) and (311) rocking curves are less than 91arcsec and 111arcsec respectively. All indicators have surpassed the best foreign standards and reached the world's leading level.
Chinese semiconductor thread II
China a "sustainable 10 year gap" behind in advanced chips according to Intel CEO at Davos. Video in the replies: https://x.com/kevinsxu/status/1747707313475993719?s=20 Let's see how it ages in comparison to other famous Pat Gelsinger comments such as: "AMD is in the rearview mirror" -...
www.sinodefenceforum.com
but yeah, it's big news
i looked at this Canalys report for Q4
Very interesting here. Basically, Kirin chip phones and Apple phones are the only ones at around $1000/phone.
Unisoc is way at bottom at just $100/phone. A lot of low end ZTE, Realme and Transsion phones.
Qualcomm is at around $450/phone and Mediatek is around $300/phone
Very interesting here. Basically, Kirin chip phones and Apple phones are the only ones at around $1000/phone.
Unisoc is way at bottom at just $100/phone. A lot of low end ZTE, Realme and Transsion phones.
Qualcomm is at around $450/phone and Mediatek is around $300/phone
Pretty much, I think not a lot, these "partnerships" usually are made so Western equipment companies like ASML integrate their tools <which by the way they can't sell in China anymore> into Chinese fabs manufacturing processes, therefore, believe or not, increasing China dependency on Western made tools, making domestic replacement even more difficult. Most IC research is done now in China research institutions like IMECAS and others, the Shanghai ICRD, the newly funded by Naura and SMEE material and equipment innovation center and so on, the goal is to make sure that China IC manufacturing processes now work seamless with their increasingly growing domestic semiconductor supply chain, once this integration is done it will be increasing difficult tapping the Chinese semiconductor market even if relations go back to normal. The other situation is that this growing supply chain includes parts and material that one day will flood the global semiconductor supply chains, to much of the surprise of the stooges in D.C. Thought there is also the growing secrecy in the Chinese semiconductor industry is also difficult working with countries when you have a group of social science graduates stooges that are trying to supress China IC development. So there is that.
You need the collecting mirror to do projection. But yes if you’re just talking about the light source before the optical stage then yes *that* collector you definitely don’t need.
I do recall estimates that it would take a year to construct the SSMB facility, but I don't think we've heard any news about Xiongan in the last couple of months.