Chinese semiconductor industry

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ansy1968

Brigadier
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Huawei has had internal team to build EDA for many years. There are a number of existing Chinese EDA companies with varying capabilities. There are several new Chinese EDA startups in the last few years founded by former executives and senior engineers from the big international EDA companies. The market is responding to the new reality and dynamics. Currently most Chinese IC design companies still have access to the tools and platforms from the foreign EDA companies, but domestic EDA companies are given particular attention and support in view of sanction risk from the US and the unreliability of foreign EDA vendors. They're giving domestic EDA vendors a lot more opportunities.
@weig2000 bro they already had an EDA for 7nm chips from previous post of @WTAN by the name of A-tan or something? together with the news of DUVL &EUVL from 2 years ago?
 

weig2000

Captain
@weig2000 bro they already had an EDA for 7nm chips from previous post of @WTAN by the name of A-tan or something? together with the news of DUVL &EUVL from 2 years ago?

This is not an issue of whether they or China has an EDA or not. China has it, for a long time. EDA is a software platform with features and functionalities etc., but more importantly it has vast libraries of design IP that are updated constantly. It takes a lot of time to accumulate and build up those libraries. This is not the same as if you have a 28nm DUVL or not.
 

montyp165

Senior Member
I support the use of technology to exchange technology, but giving technology to another country to create allies or alliances is absolutely not.

28nm and 14nm processes are top-secret technologies that cannot be shared with anyone, unless foreign countries use technology of equivalent value to exchange (EG: aircraft technology...)

The Russians are already focusing on developing 28nm and 16nm fabs for their own domestic supply (with the help of some talent from TSMC), so there are synergies with China in that area that are possible to build on.
 

GodRektsNoobs

Junior Member
Registered Member
The Russians are already focusing on developing 28nm and 16nm fabs for their own domestic supply (with the help of some talent from TSMC), so there are synergies with China in that area that are possible to build on.
That's interesting. But where would the Russians get their equipment from? I doubt it's any easier for them to obtain compared to China, in fact it might be even harder considering the amount of time Russia spent in Western crosshairs.
 

xypher

Senior Member
Registered Member
So lets say when China has increased its own capacity to cover like 70% of its internal semi conductor needs, Chinese semi equipment manufactures can start providing tooling for core SCO nations? Given most if not all SCO/BRI nations are under the same Wassenaar arrangement for exporting dual use equipment and tooling.
Of course they can, if China wants to. The thing is that it will take quite some time to first satisfy the domestic demand imo.
 

latenlazy

Brigadier
Does anyone know what the wattage of the LPP light source China has reached with EUV research? This was the bottleneck of EUV for over a decade. Western sources were rather transparent. For instance, by 2011 Cymer had reached 11 W, by 2013 ASML had reached 55 W, by 2016 it reached 200 W. Once it reached 250 W it enabled EUV. The key to increasing wattage was prepulse”—a low-intensity laser that flattens each tin droplet into a pancake shape so that more of its area is hit by the main, vaporizing laser. The basic approach isn’t all that new—Cymer presented early results on the prepulse approach in 2011. But thanks to a combination of modeling and experimentation, ASML has been optimizing the process. “The reason why the progress has been so dramatic in the last year—maybe year and a half—is understanding the physics of what’s happening in that process,” says (ASML marketing director) Michael Lercel. “It’s a lot of things that really are at the cutting edge of the plasma physics.”

What physics is he referring to?

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The physics he’s referring to is the kinetic interaction between the tin droplet and the laser. Basically when the laser strikes the tin droplet the energy transferred to the droplet causes a kinetic effect that changes the droplet’s shape. This alteration in shape then affects how the lasing photons propagate through the droplet, which impacts secondary excitation interactions and scatter profile, as well as droplet spray, all of which affect how much of the energy from the drive laser gets converted into EUV photons. Basically you want the most efficient conversion from drive laser output to EUV photon output possible. Simply increasing the drive laser power isn’t sufficient because driving up the power can cause more droplet spray (the droplet experiences more kinetic interactions) which can then reduce conversion efficiency.
 

WTAN

Junior Member
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There are 2 reasons why it took the Japanese and Americans almost 10 - 15 years to achieve a LPP EUVL Source Power of 250W which is suitable for High Volume Production.

1) It took time to develop the unique MOPA CO2 Pulsed Drive Laser. This was a pulsed laser which was powerful and achieved Average Power of 20KW plus which is necessary to achieve maximum EUV Photon Output.

2) it took time to develop the Pre-Pulse method of illiminating the Tin Droplet prior to the main Laser Pulse.

Chinese Researchers now have the privilege of studying the methods used by Gigaphoton and Cymer in the development of their LPP EUVL Light Sources.

Gigaphoton uses a 27KW Drive Laser to achieve LPP EUVL Source Power of 250W.

Shanghai Institute has already developed a 10KW MOPA Pulsed CO2 Drive Laser many years ago.
They are currently working on developing a 20KW Plus MOPA CO2 Drive Laser suitable for High Volume Manufacturing.
They are working on adding more powerful Laser Ampifliers to achieve 20KW Plus Power.
The Mitsubishi/Gigaphoton MOPA Drive Laser uses 4 Powerful Fast Axial Flow Laser Amplifiers to achieve this.
China already produces these types of FAF

China will develop a EUVL faster than many people think.
I think this is driving the American Government to take dramatic action against Samsung and TSMC in order to meet the challenge of the coming of the Chinese LPP EUVL.
 

AndrewS

Brigadier
Registered Member
There are 2 reasons why it took the Japanese and Americans almost 10 - 15 years to achieve a LPP EUVL Source Power of 250W which is suitable for High Volume Production.

1) It took time to develop the unique MOPA CO2 Pulsed Drive Laser. This was a pulsed laser which was powerful and achieved Average Power of 20KW plus which is necessary to achieve maximum EUV Photon Output.

2) it took time to develop the Pre-Pulse method of illiminating the Tin Droplet prior to the main Laser Pulse.

Chinese Researchers now have the privilege of studying the methods used by Gigaphoton and Cymer in the development of their LPP EUVL Light Sources.

Gigaphoton uses a 27KW Drive Laser to achieve LPP EUVL Source Power of 250W.

Shanghai Institute has already developed a 10KW MOPA Pulsed CO2 Drive Laser many years ago.
They are currently working on developing a 20KW Plus MOPA CO2 Drive Laser suitable for High Volume Manufacturing.
They are working on adding more powerful Laser Ampifliers to achieve 20KW Plus Power.
The Mitsubishi/Gigaphoton MOPA Drive Laser uses 4 Powerful Fast Axial Flow Laser Amplifiers to achieve this.
China already produces these types of FAF

China will develop a EUVL faster than many people think.
I think this is driving the American Government to take dramatic action against Samsung and TSMC in order to meet the challenge of the coming of the Chinese LPP EUVL.

From a commercial perspective, it looks like ASML sells its equipment for double the actual cost.
So the 1st generation of Chinese lithography machines don't have to be the best.
As long as they can get decent performance at a decent price point, they can decimate ASML sales.

We can also see TSMC works to a similar profit margin as ASML, so a vast expansion in Chinese fab capacity is on the cards.
 
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