broadsword
Brigadier
Wouldn't the SSMB probably be much further down the road than EUVL?
Chinese semiconductor industry
- Thread starter Hendrik_2000
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SSMB is just a very high power [kilowatt range] and very clean light source for an EUVL system, they already working on it.
If they were limited at 20 kHz before it might not be (in my estimation probably isn’t) because they were technically limited by the ability to generate a higher frequency of drops, but were instead limited in other parts of the system that could not operate at a higher frequency of actions. For example the drive laser pulses need to match the frequency of the droplets, and while usually pulsing lasers at high frequency is easy to do perhaps they couldn’t do this at the requisite pulse power output they needed. Alternatively, based on the paper’s own contents, it might be a noteworthy accomplishment more from the standpoint of runtime or being able to maintain favorable stream and droplet characteristics since there’s a difference between breaking your stream into the right drop frequency and doing it in a way that makes the drops usable.
For reference, ASML’s EUV instrument has a drop frequency of 40-50 kHz if I recall correctly.
But yes, while the physics behind LPP is pretty fun and interesting I too am looking forward more to SSMB. Convoluted engineering is great from a novelty standpoint but a headache to think about once you get into practical applications.
Could you explain more about these ?
Is this about the EUV like ASML or the new SSMB ?
This is about the EUV wavelength photosensitive chemical that will be used as a film to pattern the circuits components into the wafer.
Yes I think that is for their 250W light source, their High NA system will double that to 500W so will be a pick your poison between the power and RR of the MOPA laser, the size of the collector mirror and frequency of the droplet generator. Multilayered mirrors are at the limit of their efficiency so better mirrors seems to be not an option.
As convoluted as may seem now everyone seems to be looking to FELs to solve the EUV power and efficiency problem.
@latenlazy
In 2014 was 20Khz stable RR with a goal of stable 50-100KHZ RR. Thinking about it, with powerful enough MOPA laser, big enough collector mirror would be possible to reach at least 200W of EUV power, with enough throughput for some applications.
In 2014 was 20Khz stable RR with a goal of stable 50-100KHZ RR. Thinking about it, with powerful enough MOPA laser, big enough collector mirror would be possible to reach at least 200W of EUV power, with enough throughput for some applications.
I'm guessing the 250W system is for moving current 7nm and near future 5nm production from DUV to EUV while the 500W High NA system is for 3nm onwards?
The 500W is for throughput and the High-NA [0.50] is for the Critical Dimension, reduce the need for multi-patterning although there still some issues that have to be dealt with.
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