Jingsheng Electromechanical:
Silicon carbide project signed, with production capacity of 300,000 pieces
On November 4,
Jingsheng Electromechanical held a signing and launching ceremony
for the silicon carbide substrate wafer project .
According to reports, this project will be located in Shangyu District, Shaoxing City, Zhejiang Province. The total investment in the project is
2.12 billion yuan . The annual silicon carbide production capacity is:
250,000 pieces of 6 inches and 50,000 pieces of 8 inches .
At the launching ceremony, Dr. Cao Jianwei, chairman of Jingsheng Electromechanical, said that the launch of the silicon carbide substrate wafer project is an important direction for Jingsheng Electromechanical’s innovative growth.
Signed a contract for silicon carbide industrial park project
From November 3rd to 5th, the 2023 Baishishan Third Generation Semiconductor Industry Development Conference was held in Laiyuan County, Hebei Province. During the conference, 8 projects were signed together, with a total investment of nearly 4 billion yuan, including 2 projects involving silicon carbide -
the silicon carbide power module production line project, and
the silicon carbide industrial park project of
Hebei Tongguang Semiconductor Co., Ltd. .
n September 2021, Zheng Qingchao, chairman said when its
100,000-piece silicon carbide project was put into production , “Next, Tongguang is planning to build a growth base of 2,000 silicon carbide crystal growth furnaces and an annual output of 600,000 pieces of silicon carbide. The total investment in the monocrystalline substrate processing base is planned to be
4 billion yuan , and it is expected to be fully operational by the end of 2025."
In May this year, Wang Wei, deputy general manager of Tongguang Co., Ltd., said, "Tongguang Co., Ltd. has been rapidly expanding production in the past two years. Our internal production capacity is planned to reach
300,000 pieces next year and 500,000-600,000 pieces in 2025."