Chinese semiconductor industry

Chinese molecular ‘glue’ could pave the way to advanced 3D-printed semiconductors​

• ‘3D Pin’ technique helps researchers form stable bonds between suspended nanocrystals to create robust 3D structures
• New materials in the 3D-printing toolbox could mean more cost-effective 3D semiconductors without compromising purity or performance.

This is Interesting.

Jinghe Integration has reached strategic cooperation with domestic equipment manufacturers!​

On October 27, Tianxin Micro and Jinghe Integrated signed a strategic cooperation agreement in Hefei. The two parties will actively cooperate in the research and development of high-end semiconductor manufacturing equipment and processes and work together for common development. Wang Yanqing, chairman of Wuxi Leading Intelligent Equipment Co., Ltd. and chairman of Leading Group, representatives of Tianxin Micro and relevant leaders of Jinghe Integration attended the signing ceremony.




In response to this strategic cooperation, Tianxin Micro's representative emphasized that the company will continue to invest in excellent talent teams and resources to assist the development of Jinghe Integration. He also said that collaborative development of upstream and downstream industries and driving independent innovation are the main themes of semiconductor development. The cooperation between the two parties will further improve the research and development efficiency of products and processes, and accelerate the mass production application of new technologies and new products.

Tianxin Micro is a key enterprise in the semiconductor industry layout of Wuxi Pilot Group. It is committed to the research and development, manufacturing and application of key semiconductor front-end process equipment. With its differentiated competitive strategy and innovative development strategy, Tianxin Micro takes the lead in the field of epitaxial process equipment. The products are used in logic chip foundry, storage products, and power device manufacturing with advanced processes. All performances have reached the international advanced level. Some core performances exceed similar international products and have been widely recognized by customers.

In August 2022, Tianxin Micro's first advanced process silicon-based epitaxial decompression equipment Epi RP 300 Compass HP was successfully launched and entered the leading domestic wafer foundry, marking the company's official transformation from productization to industrial application.

Independent product innovation is the purpose of Tianxin Micro's development. In the future, the company will maintain a high level of R&D investment, attract global professional talents, accelerate the localization and industrial application of high-end semiconductor equipment, and provide customers with market competitive products and services. Collaborate with the innovative development of China’s semiconductor industry.

Looks like this company is from the same guys who own leadmicro the ALD company

Rongdao Precision is committed to the design & manufacturing of high-purity electronic chemical containers​

Changzhou Rongdao Precision Equipment Co., Ltd. is an advanced manufacturing enterprise focusing on the design, development and production of electromechanical equipment for the semiconductor industry.
The company strives to become a world-class supplier of semiconductor material containers, key electromechanical equipment for semiconductors and complete service solutions.

Jcet getting 4.8B fund from big fund & 2 other funds for its large auto chip advanced pacakging plant in Lingang

This project started construction in August and will complete by early 2025.

When complete, this will be a smart lights out factory, so highly automated

tphuang said:

keep your eyes on this, huge national security implications.

if you can get diamond power semiconductor cost down, then you can just skip the Gallium oxide AESA radar and go straight to diamond ones, lol

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View attachment 120876
Look at the bandgap value there 5.47, even higher than gallium oxide (4.8 I think)

Click to expand...

Before diamond chips (the tech for them is quite immature) there can be GaN on Diamond. Diamond is a much better conductor of heat than the SiC so GaN-on-Diamond is still a quite big deal.

Alibaba came out with new control chip 镇岳510 for SSDs. already used internally on various storage

Innoda releases RTL-level power consumption analysis tool to promote energy-efficient IC design​

(November 1, 2023, Chengdu, Sichuan) Innoda (Chengdu) Electronic Technology Co., Ltd. released the EnFortius® RTL-level power analysis tool (RPA) to evaluate circuit power consumption in the early stage of IC design , to optimize the circuit design as early as possible. This tool is the third tool in Innoda's low-power EDA series. From low-power static check (LPC) to gate-level power analysis (GPA), Innoda continues to move forward with this latest tool. Advance and explore the road to power consumption optimization.

GOWIN Semiconductor Corporation Expands its Arora V FPGA Family with Advanced Features​

GOWIN Semiconductor Corporation, recognized as the world’s fastest-growing FPGA company, is excited to announce an expansion of its Arora V high-performance FPGA family. The latest offering leverages cutting-edge 22nm SRAM technology, 12.5Gbps high-speed SerDes interfaces, PCIe hardcore, MIPI hardcore D-phy and C-phy support, RISC-V microprocessor, and DDR3 interfaces. The extended family now includes 15K, 45K, 60K, and 75K LUT device offerings.

The new Arora V family not only complements the previous Arora family but also offers a significant performance boost with lower power consumption. Specifically, the Arora V devices exhibit 30% higher performance and a remarkable 60% reduction in power consumption compared to the Arora GW2A family. Arora-V programming configuration provides designers with a wide array of options including JTAG, SSPI, MSPI, CPU, and the ability to directly program external SPI Flash in JTAG or SSPI Mode. In addition, it allows for indirect programming of external Flash in other modes using a soft-core IP bridge and supports background upgrades, bitstream file encryption, and security bit settings.

Arora V further distinguishes itself by delivering exceptional Single Event Upset (SEU) resiliency compared to competitors. GOWIN has adopted an innovative approach by designing custom SRAM cells, significantly reducing soft error rate effects. To make the handling of SEU-related matters more accessible, GOWIN provides a “SEU Handler” wrapper IP, which allows users to seamlessly access SEU reports and correction functions, enhancing both reliability and efficiency.

The new Arora V family also incorporates an advanced I/O structure capable of recovering received serial data containing an embedded clock using built-in CDR technology at each differential I/O pair. This feature facilitates easy cascading of multiple GPIOs for achieving high data throughput, all without the need for a SERDES-based solution. Solutions such as Ethernet, Industrial Field Buses, and LVDS Bus Applications to name a few, can easily be implemented using EasyCDR.

“We are excited to be offering our latest 22nm technology products for next-generation applications during our innovation phase of growth,” states Scott Casper, Director of Sales, GOWIN Semiconductor, “The improvement in performance and speed as well as the added feature of EasyCDR will take us into solutions not realized by previous families.”

Dongfeng's first batch of independent silicon carbide power modules rolls off the production line​

Wuhan Economic Development Zone news on the 2nd, recently, the first batch of silicon carbide modules using nano-silver sintering technology successfully rolled off the production line of Zhixin Semiconductor Phase II, and completed independent packaging, testing and application aging tests.

Image source: Wuhan Economic Development Zone
It is reported that this silicon carbide module adopts nano-silver sintering process, copper bonding technology, high-performance silicon nitride ceramic liner and customized pin-fin heat dissipation copper substrate. The thermal resistance is improved by more than 10% compared with traditional processes, and the operating temperature can be Reaching 175°C, the loss is significantly reduced by more than 40% compared to the IGBT module, and the vehicle's cruising range is increased by 5%-8%.
According to Wuhan Economic Development Zone, the Zhixin Semiconductor silicon carbide module project is based on Dongfeng Group's "Mach Power" new generation 800V high-voltage platform. The project will undergo preliminary development in 2021 and will be officially approved as a mass production project in December 2022. In the four years since its establishment, Zhixin Semiconductor has applied for and accepted 51 patents, including 40 invention patents, and has authorized 20 patents, including 11 invention patents .
According to previous news, in June 2019, Dongfeng Motor Corporation and CRRC jointly established Zhixin Semiconductor Co., Ltd. to independently develop and produce automotive-grade IGBT modules . In July 2021, the production line based on the 6th generation IGBT technology will start mass production. The second phase of Zhixin Semiconductor's silicon carbide module project will be launched in the third quarter of 2022, and construction will begin in May 2023. News at the time showed that the project planned to build a new automotive-grade IGBT module production line to achieve an additional annual production capacity of 300,000 automotive modules.