Chinese semiconductor industry
- Thread starter Hendrik_2000
- Start date
- Status
The fog of chip war!
This is going to get very interesting, because we cannot hide from these results and outcomes. People in America will start asking questions and pointing fingers.
China making 7nm in mass production, wipes out the idea of the chip war, where restraining China from advancing is achievable by denying them access to advanced chips. Currently, the most important things for chips, discounting consumer electronics, uses 7nm or older chips.
China making an EUV that works, wipes out the China market for everyone else in chips almost.
This can get ugly real quick.
It's been a super long time since thermal conductivity, band gaps, p-type doping, n-type semiconductor, and other such terminology was of any importance to me, but reading this and the recent news about Apple made me think, why is there not more research into Diamond Like Coatings (DLC) for semiconductor cooling? Apparently Apple already considered it (of course, that's why those guys are paid the big bucks)
Now, if you know, Chinese had recently made some big push into the CVD diamond gemstone business, so much so that it is a big fear of DeBeers
If the yield and process technologies of these Chinese diamond companies have improved so much in the last few years, maybe some exotic cooling apparatus can help push the semiconductor performance as well.
This is a very good video.
Just one problem for me, it was what was said near the end.
The presenter acknowledged, judging by the science, that the light source was proven to be real, that they can get that beam or light to have the right requirements.
In short, the science is real.
But, if the science is real, then why build another research facility. Why go through that expense to verify something that you already verified. That makes no sense.
There is a con job going on here.
Either the whole idea of SSMB-EUV is all fake, and that is why they are building that research facility. For further research.
Or, that, it is real, but they won't admit to anything, other than that they are building a research facility.
These mysterious questions, seem to tie into that Huawei EUV patent for me.
That Hauwei EUV patent is different from the ASML EUV patent.
Weird, huh?
No answers.
I think I will think of something else, sing a song, take a walk.
Don't worry, be happy.
That facility could be a public private project, public part will use some of the EUV capacity to do research into materials and optics. Some of the capacity might be reserved for SMIC and Huawei to create 5nm chips. After some years SMIC and Huawei might create their own private SSMB-EUV facilities..This is a very good video.
Just one problem for me, it was what was said near the end.
The presenter acknowledged, judging by the science, that the light source was proven to be real, that they can get that beam or light to have the right requirements.
In short, the science is real.
But, if the science is real, then why build another research facility. Why go through that expense to verify something that you already verified. That makes no sense.
There is a con job going on here.
Either the whole idea of SSMB-EUV is all fake, and that is why they are building that research facility. For further research.
Or, that, it is real, but they won't admit to anything, other than that they are building a research facility.
These mysterious questions, seem to tie into that Huawei EUV patent for me.
That Hauwei EUV patent is different from the ASML EUV patent.
Weird, huh?
No answers.
I think I will think of something else, sing a song, take a walk.
Don't worry, be happy.
The video mentioned the tech should be powerful enough to do soft x-ray lithography, so im sure Chinese scientist will completely claim this research facility after SMIC and Huawei have build their own facilities....
So Chinese scientist can start working on soft x-ray chemicals and optics(?) and the Russians are also focussing on x-ray lithography.
My knowledge of Material science is low, so just want to ask, is there even Silicon molecules below 1nm?
As far as my knowledge, these NM values are now just marketing terms, The actual dimension of transistors and pathways for so called 3 NM process from TSMC is like 20NM.
So, what does doing sub 1nm lithography even mean?
The nano meter metric is just a marketing term.
It comes down to the lower the nm the more transistors per square mm/cm or something like that.
Study of multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM.
With the development of 5G and artificial intelligence, the demand for high-speed, massive data transmission, and big data storage capacity is increasing. The shrinking device size has entered deep nanoscale nodes. From 22 to 7 nm nodes, FinFETs face increasing problems, such as the short channel effect (SCE) and patterning challenges. Stacked gate-all-around (GAA) channels with nanowires (NWs) or nanosheets (NSs) are promising structures to meet the roadmap requirements for electrostatic control, density, and performance. A GAAFET structure allows for the design of channel width to satisfy current diversification for devices on a single wafer with a low area cost. In addition, the evolution of horizontal 4F2 3D DRAM based on silicon-based nanowire gate-all-around transistors is an important research approach for future DRAM technology. Transistors and capacitors are stacked in the vertical direction, so multilayer Si/SiGe epitaxy and ultrahigh selective ratio release technology are the key technologies to realize the development of these structures. A VS (vertically stacked) CAT (cell array transistor) is a prospective candidate that has the potential to improve the performance and power efficiency of electronic devices. In 2023, a 3D stackable 1T1C DRAM structure based on vertically stacked SiGe/Si heterojunctions was reported at IMW and VLSI. Fig. 1 shows the three most critical process steps in vertically-stacked 3D-DRAM: (a) Si/SiGe epitaxy; (b) SiGe full release; and (c) high-k and top electrode deposition. The memory array structure is similar to a 90-degree rotated 4F2 DRAM. Retention time is a critical factor in the operation of DRAM, and the quality of the stacked Si multilayer channels is crucial in ensuring that transistors function effectively. The number of stacked Si/SiGe multilayers can be tuned by epitaxy film cycles, and more channels can increase the storage density and electrostatic performance. Achieving multilayer film epitaxy with high crystal quality is essential in ensuring the reliability and functionality of the device. Additionally, removing the SiGe sacrificial layer without damaging the Si channel is a complex process that requires precise control and optimization. Due to the lattice mismatch between Si and Ge, when the SiGe thickness exceeds the critical thickness, dislocations will occur and propagate along the growth direction, which will reduce the Si channel quality. Currently, Si channels are typically etched using selective corrosion of SiGe with various etching agents and methods, such as vapor HCl, plasma techniques, and wet methods. However, if the selection ratio and etching accuracy are inadequate, then this can lead to changes in channel thickness, which may cause variations in Vth and Ion over a wafer.
This is a very good video.
Just one problem for me, it was what was said near the end.
The presenter acknowledged, judging by the science, that the light source was proven to be real, that they can get that beam or light to have the right requirements.
In short, the science is real.
But, if the science is real, then why build another research facility. Why go through that expense to verify something that you already verified. That makes no sense.
There is a con job going on here.
Either the whole idea of SSMB-EUV is all fake, and that is why they are building that research facility. For further research.
Or, that, it is real, but they won't admit to anything, other than that they are building a research facility.
These mysterious questions, seem to tie into that Huawei EUV patent for me.
That Hauwei EUV patent is different from the ASML EUV patent.
Weird, huh?
No answers.
I think I will think of something else, sing a song, take a walk.
Don't worry, be happy.
Because the Huawei patent describe a device that is meant to be used with a Coherent Light Source like a laser, that could include Free Electron Lasers or a Steady State Micro Buching FEL.
- Status