Thanks. Could you please post the link where you got that info?
Chinese semiconductor industry
- Thread starter Hendrik_2000
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This is very sloppy and does a great disservice to anyone wanting to learn the terminology and basic functionality.
Source power is not equal to intermediate focus. You have to be very careful not to mix the two, because power at intermediate focus can be 5-8 times less than the power at source. Source power is the usable EUV power generated at the point of plasma, like this sketch illustrates:
Each of those mirrors is going to absorb a portion of incoming EUV light. The power reaching the wafer will be a single digit percentage of the power at intermediate focus.
In a LPP system, the point where plasma is created and where source power is generated is also known as the primary focus (PF). PF and IF (intermediate focus) are the two focii of an ellipsoid, so that the EUV power radiated from the PF and reflected off the collector converges at IF.
@Oldschool If Harbin Institute DPP achieved 150W at IF, then that's a major breakthrough! Xtreme's LDP solution only managed about 35W at IF circa 2010-2011.
@Oldschool If Harbin Institute DPP achieved 150W at IF, then that's a major breakthrough! Xtreme's LDP solution only managed about 35W at IF circa 2010-2011.
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I never said Source Power is equal to Intermediate focus. You are the one that brought up Intermediate Focus.
What we should be focusing on in this topic of Chinese DPP EUV Light sources (in relation to WPH) is just Source Power.
Bringing something like Intermediate focus into this discussion is irrelevant and means nothing to the Layman unless you are a Scientist involved in Light Source research.
People are only interested in Source Power and the WPH that can be achieved.
I say once again that the figure of 150W+ produced by the Harbin Inst DPP Light Source is Source Power. NOT INTERMEDIATE FOCUS.
Source Power of 200 - 250W is necessary for mass production.
I think it is important to dig up what your source meant by "source power". If it is not power at intermediate focus, then it is likely power at plasma generation point. AFAIK, those are the only two commonly used reference points for "source power". Do you have a link?
Unfortunately there is no link as it is Insider information and classified at this stage of the Light Source development.
More information will come through most likely through articles by CAS.
But for the time being thats the information available.
You probably right on using the IF power as criteria since IF power is the final point after being collected, and filtered before entering the chamber.
But we don't particularly need to be concerned about the numbers for the Harbin prototype as they will redesign for the industrial grade equipment. They won't be the same. Probably big changes too.
Light generation module need redesign. Optics need to be redesign. Internal support structures need to be redesign..etc
Its demo thing that shows they understand the principles and how to go about design for different spec.
This is where politicians get really irritating banging on the same door . Not the first time we have heard about fund for boosting US semi industry. I don't see they have anywhere near raw talent pool required for that. No frame work of how actually they will use that fund.
So long as Intel is made by Indians, US chips will lag behind.
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