I think the higher laser poewr is if it's they want to do high NA.
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Chinese semiconductor industry
- Thread starter Hendrik_2000
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These guys talk tough but they barely see 1 move ahead that they always end up falling on their own swords.
antiterror13
Brigadier
Yes, You are correct but
The reason people prefer high NA and single pattern with higher power at smaller node versus same NA , same power and multiple pattern is the increase of mask steps which translate to higher cost.
So in 2025, they need to able do single pattern at 5nm or 3nm with multiple patterns if additional cost justified
We'll just have to wait and see then.
The technology is there, not a fairy tale. So it's just a matter of catching up.
If they deny technology to China, then that technology is fair game for espionage.
Skywatcher
Captain
Or use a Beyond EUV (6.7nm wavelength) which IIRC, uses a rare earth element in the place of tin.
I think there's some preliminary research in China and Japan on BEUV light sources, but BEUVL would probably require its own specialized optics.
This part is very telling
So despite having his declared his intention of sending CCP into the "ash heap of history", Cotton suggests turning to communist Vietnam instead of 'democratic' India. Indians love daydreaming about the West building them up as a counterbalance to China, but the idea that the West is going to build a potential competitor of India's size is just nonsense.
Okay.....with EUV Light Source what we should all be looking at is Source Power. Source Power is the measurement of the amount of EUV Photons delivered to the Scanner to enable wafer exposure.
It is through looking at Source Power that we can calculate the productivity in Wafers Per hour.
It is said that 250W Source Power is required for mass production of 125 WPH.
The NXE3400 has a light source with Source Power of 200 - 250W at intermediate Focus.
The CAS EUVL has a DPP light Source with Source Power of 150W+ currently.
Old School mentioned that the DPP Light Source has a Power range of 114W to 180W.
If this is accurate, then CAS is well on its way to achieving a source Power at Intermediate Focus of 200W+ by 2025.
By 2025 CAS should hopefully increase the Power of the DPP or LPP Light Source to at least 200W+.
This will enable some type of mass production to take place.
Below is part of an article explaining about this Source Power and how it relates to productivity in Wafers Per Hour.
At the recently held Semicon West tradeshow in the United States, lithography vendor ASML announced it had achieved an important and long-elusive milestone: the demonstration of a 250-watt EUV source. Source power—a measurement of the amount of EUV photons delivered to the scanner to enable wafer exposure—equates directly to productivity. Chipmakers have long insisted that source power of 250W would be required to achieve throughput of 125 wafers per hour (WPH) and the inability of ASML and Cymer (which ASML acquired in 2013) to push the technology to hit that mark has been considered the primary roadblock for EUV development in recent years.
Michael Lercel, director of strategic marketing at ASML, said the company has demonstrated 250 watts “rather consistently by really understanding the conversion efficiency in the source and putting the right controls in place.” He said the source that has demonstrated 250W has not yet shipped.
Leading edge chipmakers including Intel, Samsung, TSMC and Globalfoundries are planning to insert EUV into high-volume production sometime in the next two years. ASML demonstrated back in February throughput of 104 WPH and executives said even before the 250W source power was demonstrated that the company had a roadmap to get to 125 WPH.
The 250W source power milestone represents an improvement of 10 fold over the past five years from about 25W in 2012. Delivering a presentation on the economics of EUV for production, Lercel joked that when he worked at Cymer in the early part this decade the goal for reaching 250W of source power “was always next year.”
It is through looking at Source Power that we can calculate the productivity in Wafers Per hour.
It is said that 250W Source Power is required for mass production of 125 WPH.
The NXE3400 has a light source with Source Power of 200 - 250W at intermediate Focus.
The CAS EUVL has a DPP light Source with Source Power of 150W+ currently.
Old School mentioned that the DPP Light Source has a Power range of 114W to 180W.
If this is accurate, then CAS is well on its way to achieving a source Power at Intermediate Focus of 200W+ by 2025.
By 2025 CAS should hopefully increase the Power of the DPP or LPP Light Source to at least 200W+.
This will enable some type of mass production to take place.
Below is part of an article explaining about this Source Power and how it relates to productivity in Wafers Per Hour.
At the recently held Semicon West tradeshow in the United States, lithography vendor ASML announced it had achieved an important and long-elusive milestone: the demonstration of a 250-watt EUV source. Source power—a measurement of the amount of EUV photons delivered to the scanner to enable wafer exposure—equates directly to productivity. Chipmakers have long insisted that source power of 250W would be required to achieve throughput of 125 wafers per hour (WPH) and the inability of ASML and Cymer (which ASML acquired in 2013) to push the technology to hit that mark has been considered the primary roadblock for EUV development in recent years.
Michael Lercel, director of strategic marketing at ASML, said the company has demonstrated 250 watts “rather consistently by really understanding the conversion efficiency in the source and putting the right controls in place.” He said the source that has demonstrated 250W has not yet shipped.
Leading edge chipmakers including Intel, Samsung, TSMC and Globalfoundries are planning to insert EUV into high-volume production sometime in the next two years. ASML demonstrated back in February throughput of 104 WPH and executives said even before the 250W source power was demonstrated that the company had a roadmap to get to 125 WPH.
The 250W source power milestone represents an improvement of 10 fold over the past five years from about 25W in 2012. Delivering a presentation on the economics of EUV for production, Lercel joked that when he worked at Cymer in the early part this decade the goal for reaching 250W of source power “was always next year.”
I don’t think this is quite right. The ultimate value that matters for WFH is the amount of light that’s actually exposed at the wafer, which has its own spec value. That’s source power minus all the photon loss along the optical path. I think source power is obviously a very important value, and assuming that there shouldn’t be *too* much range in how much photon loss different optical designs impose it should be a good proxy, but if that assumption doesn’t hold the requisite source power for comparable performance with ASML’s NEX3X00 series could be higher or lower.
The intention for posting this was to clarify some matters regarding the Harbin Institute DPP Light Source and its Source Power in relation to Wafer Production per Hour. There had been some confusion earlier on about the Specifications of the Harbin Inst DPP Light Source.
Anyway the full article here.
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