Chinese can't buy house there so it doesn't work.
Chinese semiconductor industry
- Thread starter Hendrik_2000
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The American South it seems to be relative cheaper for manufacturing compared with other parts of the US. I still remember before the current Think Tank driven China hysteria hit the US, A lot Chinese companies were opening manufacturing centers in the US to be closer to their clients, especially companies who manufactured intermediate supply chain goods, like for example, brakes discs for cars and I remember that most of those companies installed their operations in the Deep South, because low taxes, relative cheap land and relative cheap labor compared to the rest of the US.
Because the Southern States have anti-labour laws
btw, this could be a big deal
Originally, LS said they expected 3A6000 to reach specint 2006 score of 35 to 45 IIRC. If they reached 17 per GHz and expect to operate 3A6000 at 3GHz, then the actual tested score post taping out is around 50, which is a 20% improvement over what they were expecting.
3B6000 is hoping for another 20% bump imperformance to around 60. Apple M1 does have higher score of 24/GHz, but M1 uses 5nm process and 3B6000 uses 12nm process.
Expect another big improvement with 3A7000/3B7000 next year when they finalize move to 7nm process. Lol, LS wants to customize physical layer like memory interface & PCIE interfce. And that's going to take 2024. These guys are definitely huge nerds. I like it
I mean I really hope that Huawei & harmony can work with LS. At some point, HW just won't have license to ARMv9. And RISC-V is not ready for high end computing. It will be good to see some LS SoC in HW products
Samsung semi is based in Austin but still facing the same problem of high production costs and a lack of labor with construction costs that probably double the initial projection. The reality is American workers are better compensated but less productive than Taiwanese and Koreans.
At that read/write speed, it sounds more like 128L.
Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching.
Linfeng Zhang, Bing Wu, Yi Zhang, Hui DengDepartment of Mechanical and Energy Engineering,
Southern University of Science and Technology, China.
Plasma-based atom-selective etching (PASE) of GaN is conducted to realize the highly efficient planarization of the GaN surface. Inductively coupled plasma with high temperature and high concentration of radicals is used as the source of PASE. The non-toxic carbon tetrafluoride is chosen over chlorine as the reaction gas, and the volatility of the etching products will be improved at high temperatures in the PASE of GaN. After 2 min of PASE, the GaN surface roughness is reduced from Sa 135.8 nm to Sa 0.527 nm. The material removal rate of PASE of GaN is measured to be 93.01 μm/min, thousands of times higher than that of the conventional chemical mechanical polishing method. The crystal structure of the GaN subsurface is well-ordered without any damage or defects. PASE is thus proven to be a non-destructive etching method. In this study, the effects of radio frequency power and reaction gas flow rate on PASE are also investigated. Surface temperature and concentration of radicals are found to be the critical factors in the PASE of GaN.
CMP is also quite a dirty process as you are grinding the wafer backside with a polymer pad and ceramic abrasive slurry in atmosphere.
It has to be tolerated for interconnects for now, due to lack of volatile Cu compounds, but why use it more than you have to?
Sico Semiconductor, a manufacturer of silicon carbide epitaxial technology, completed the Pre-A round of financing
Recently, CICCO Semiconductor has put in place several silicon carbide CVD furnaces and successfully debugged them to achieve mass production of high-quality epitaxial wafers. It has delivered samples to more than ten industry benchmark customers and fulfilled purchase orders. With the smooth development of the business, Yunyi Capital, the company's angel round investment institution, promoted and supported the company to complete the Pre-A round of financing.
The epitaxial wafer products of Xike Semiconductor are mainly used to manufacture silicon carbide (SiC) power electronic devices such as MOSFET, JBS, and SBD. The company's founding core team has more than 15 years of mass production experience. With the most advanced high-quality production process and the most advanced testing equipment in the industry, it provides customers with 6-inch conductive silicon carbide epitaxy with low defect rate and high uniformity requirements. wafer.
This round of Pre-A round of financing has attracted the attention and participation of many investment institutions in the industry. In the end, two well-known institutions in the industry, Paradise Silicon Valley and Morning Road Capital, led the investment . Confidence continues to bless. Paradise Silicon Valley is one of the first batch of fund managers established in China. It has won the top ten private equity investment institutions in China and the TOP 3 best industrial investment institutions in China. Morning Road Capital is a well-known advanced manufacturing industry investment institution in the industry. Its historical investor Including Ningde era, large commercial banks, local governments, etc., the investment direction focuses on strategic emerging industries such as green and low-carbon, high-end equipment manufacturing, new materials, and semiconductors.
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