CETC 55 silicon carbide power devices and modules have made a breakthrough!
Recently, the 55th Institute of CETC and FAW jointly promoted the technological innovation of silicon carbide power devices and modules. The first 750V silicon carbide power chip developed by the company completed sample tape-out, and the first domestically produced 1200V plastic-encapsulated 2in1 silicon carbide power module completed the A sample. trial production.
According to China Electronics Technology, in the 750V silicon carbide power chip project, the technical teams of both parties jointly tackle key problems from the dimensions of structural design, process technology, and material application, and promote the silicon carbide power chip technology to reach the international advanced level. At present, it has entered the stage of product-level testing.
In the 2in1 silicon carbide power module project, the technical teams of both sides carried out joint research on new structures, new processes, and new materials to realize chip substrate and epitaxial material preparation, chip wafer design and production, packaging structure design, plastic packaging process development and Independent innovation in the whole process of key links such as module trial production lays the foundation for the full autonomy and national production of silicon carbide power semiconductor design and production.
In the future, the 55th Institute will continue to strengthen the upstream and downstream joint research of the industrial chain, and promote the independent innovation of key core technologies of silicon carbide power devices and modules; earlier this year, the 46th
Institute of CETC also successfully prepared China's first 6-inch gallium oxide single crystal. The news at that time pointed out that the achievement was "the first in China" and "reached the highest international level".